RRS110N03TB [ROHM]
Power Field-Effect Transistor, 11A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;
| 型号： | RRS110N03TB |
| 厂家： | 
ROHM |
| 描述： | Power Field-Effect Transistor, 11A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RRS110N03
Transistor
4V Drive Nch MOSFET
RRS110N03
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplications
Each lead has same dimensions
Switching
zEquivalent circuit
zPackaging specifications
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Package
Taping
TB
Type
Code
Basic ordering unit (pieces)
2500
RRS110N03
∗2
(1) (2) (3) (4)
∗1
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
Unit
VDSS
VGSS
ID
30
V
V
20
Continuous
Pulsed
11
A
Drain current
∗1
IDP
A
44
1.6
Continuous
Pulsed
IS
A
Source current
(Body diode)
∗1
∗2
ISP
44
A
Total power dissipation
Channel temperature
PD
2.0
W
°C
°C
Tch
Tstg
150
−55 to +150
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
zThermal resistance
Parameter
Symbol
Limits
62.5
Unit
∗
Channel to ambient
Rth (ch-a)
°C / W
∗
Mounted on a ceramic board.
1/4
RRS110N03
Transistor
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
µA
Gate-source leakage
IGSS
10
V
I
GS= 20V, VDS=0V
D=1mA, VGS=0V
Drain-source breakdown voltage V(BR) DSS 30
V
µA
V
V
V
DS=30V, VGS=0V
Zero gate voltage drain current
Gate threshold voltage
IDSS
1
DS=10V, ID=1mA
VGS (th)
1.0
2.5
12.6
I
I
I
I
D
D
D
D
=11A, VGS=10V
=11A, VGS=4.5V
=11A, VGS=4V
=11A, VDS=10V
9.0
∗
Static drain-source on-starte
resistance
RDS (on)
11.0 15.4
11.5 16.0
mΩ
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
10
S
2000
330
pF
pF
pF
ns
ns
ns
ns
nC
V
DS=10V
GS=0V
Coss
Crss
td (on)
V
280
f=1MHz
∗
∗
∗
16
ID=5.5A, VDD 15V
t
r
60
V
R
R
GS=10V
=2.73Ω
=10Ω
L
Turn-off delay time
Fall time
td (off)
80
∗
∗
∗
∗
G
tf
100
V
DD
15V
ID=11A,
Total gate charge
Gate-source charge
Qg
22.0 33.0
5.5
Qgs
Qgd
nC VGS=5V
R
L
=1.36Ω, R
G
=10Ω
Gate-drain charge
7.5
nC
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max.
VSD 1.2
Conditions
IS=11A, VGS=0V
Unit
V
2/4
RRS110N03
Transistor
zElectrical characteristic curves
100
100
100
VDS=10V
Pulsed
VGS=10V
Pulsed
Ta=25°C
Pulsed
10
1
Ta=125°C
10
10
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
VGS=4.0V
VGS=4.5V
VGS=10V
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.001
1
0.01
1
0.01
1.0
1.5
2.0
2.5
3.0
0.1
1
10
100
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS [V]
DRAIN CURRENT : ID [A]
DRAIN CURRENT : ID [A]
Fig.1 Typical Transfer Characteristics
Fig.3 Static Drain-Source On-State
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current(ΙΙ
)
Resistance vs. Drain Current(I)
100
100
100
VGS=4.5V
Pulsed
Ta=25°C
Pulsed
VGS=4V
Pulsed
90
80
I
I
D
=11A
70
60
50
D=5.5A
10
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
40
30
20
10
0
1
0.01
1
0.01
0.1
1
10
100
0.1
1
10
100
0
5
10
15
DRAIN CURRENT : ID [A]
DRAIN CURRENT : ID [A]
GATE-SOURCE VOLTAGE : VGS [V]
Fig.4 Static Drain-Source On-State
Fig.5 Static Drain-Source On-State
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
Resistance vs. Drain Current(ΙΙΙ
)
Resistance vs. Drain Current(IV
)
10000
100
10000
Ta=25°C
Ta=25°C
VDD=15V
VGS=10V
RG=10Ω
Pulsed
V
DS=10V
f=1MHz
Pulsed
V
GS=0V
tf
td(off)
Ta= −25°C
Ta=25°C
1000
100
Ciss
10
1000
Ta=75°C
Ta=125°C
1
Coss
Crss
10
1
td(on)
tr
100
0.01
0.1
0.01
0.1
1
10
100
0.1
1
10
100
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS [V]
DRAIN CURRENT : ID [A]
DRAIN CURRENT : ID [A]
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
Fig.7 Forward Transfer Admittance
vs. Drain Current
Fig.9 Switching Characteristics
3/4
RRS110N03
Transistor
100
10
10
Ta=25°C
VGS=0V
Pulsed
V
DD=15V
I
D
=11A
=10Ω
R
G
Pulsed
Ta=125°C
1
5
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0
0.0
0.5
1.0
1.5
0
5
10 15 20 25 30 35 40 45 50
TOTAL GATE CHARGE : Qg [nC]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.11 Source Current vs.
Source-Drain Voltage
Fig.10 Dynamic Input Characteristics
zMeasurement circuit
Pulse Width
90%
V
GS
ID
V
DS
50%
10%
50%
V
GS
DS
RL
V
10%
10%
D.U.T.
RG
V
DD
90%
90%
t
d(on)
td(off)
t
r
tr
t
on
t
off
Fig.13 Switching Time Waveforms
Fig.12 Switching Time Test Circuit
VG
V
GS
ID
V
DS
Q
g
RL
VGS
I
G (Const.)
D.U.T.
Q
gs
Qgd
RG
V
DD
Charge
Fig.14 Gate Charge Test Circuit
Fig.15 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Appendix1-Rev2.0
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