RRS100N03TB [ROHM]
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8;
| 型号： | RRS100N03TB |
| 厂家： | 
ROHM |
| 描述： | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RRS100N03
Transistor
4V Drive Nch MOSFET
RRS100N03
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplications
Each lead has same dimensions
Switching
zPackaging specifications
zEquivalent circuit
Package
Taping
TB
(8)
(7)
(6)
(5)
(8) (7) (6) (5)
Type
Code
Basic ordering unit (pieces)
2500
RRS100N03
∗2
(1) (2) (3) (4)
∗1
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
(1)
(2)
(3)
(4)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
Limits
Unit
VDSS
VGSS
ID
30
V
V
20
Continuous
Pulsed
10
A
Drain current
∗1
IDP
IS
A
40
1.6
Continuous
Pulsed
A
Source current
(Body diode)
∗
1
2
ISP
PD
A
40
∗
Total power dissipation
Channel temperature
2.0
W
°C
°C
Tch
150
Range of storage temperature
Tstg
−55 to +150
∗
1 Pw≤10µs, Duty cycle≤1%
∗
2 Mounted on a ceramic board.
zThermal resistance
Parameter
Symbol
Limits
62.5
Unit
∗
Channel to ambient
Mounted on a ceramic board.
Rth (ch-a)
°C / W
∗
1/4
RRS100N03
Transistor
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
Unit
µA
V
Gate-source leakage
IGSS
−
−
−
10
−
V
GS= 20V, VDS=0V
Drain-source breakdown voltage V(BR) DSS 30
ID=1mA, VGS=0V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
1.0
−
−
−
−
−
11
14
15
−
1600
250
200
16
40
60
35
16
3.6
5.2
1
µA VDS=30V, VGS=0V
VGS (th)
2.5
15
19
20
−
−
−
−
−
−
−
−
24
V
VDS=10V, ID=1mA
ID=10A, VGS=10V
∗
Static drain-source on-starte
resistance
RDS (on)
mΩ ID=10A, VGS=4.5V
ID=10A, VGS=4.0V
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
7
S
ID=10A, VDS=10V
VDS=10V
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
td (on)
VGS=0V
f=1MHz
∗
∗
∗
∗
∗
∗
∗
ID=5A, VDD 15V
t
r
VGS=10V
Turn-off delay time
Fall time
td (off)
tf
RL=3.00Ω
RG =10Ω
Total gate charge
Gate-source charge
Qg
nC ID=10A, VDD 15V
nC VGS=5V
Qgs
Qgd
−
−
−
−
Gate-drain charge
∗Pulsed
nC RL=1.50Ω, RG =10Ω
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max.
Conditions
IS=10A, VGS=0V
Unit
V
∗
VSD
−
−
1.2
∗Pulsed
2/4
RRS100N03
Transistor
zElectrical characteristic curves
10
10000
10000
1000
100
10
Ta=25°C
Ta=25°C
Ta=25°C
V
DD=15V
=10A
=10Ω
f=1MHz
V
DD=15V
GS=10V
I
D
VGS=0V
V
RG
R
G
=10Ω
Pulsed
Pulsed
t
f
Ciss
5
1000
t
d(off)
d(on)
t
t
r
C
oss
rss
C
0
100
0.01
1
0
5
10
15
20
25
30
35
40
0.1
1
10
100
0.01
0.1
1
10
(A)
100
TOTAL GATE CHARGE : Qg (nC)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : I
D
Fig.3 Dynamic Input Characteristics
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
Fig.2 Switching Characteristics
100
10
100
90
100
10
V
DS=10V
Ta=25°C
Pulsed
V
GS=0V
Pulsed
Pulsed
80
70
60
50
40
30
I
I
D
=10A
=5A
D
1
1
Ta=125°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.1
0.01
0.01
0.001
20
10
0
1.0
1.5
2.0
2.5
3.0
0
5
10
15
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : VGS (V)
GATE-SOURCE VOLTAGE : VGS (V)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.4 Typical Transfer Characteristics
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source Current vs.
Source-Drain Voltage
1000
1000
100
10
1000
100
10
V
GS=10V
V
GS=4.5V
V
GS=4V
Pulsed
Pulsed
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
10
1
1
1
0.01
0.1
1
10
(A)
100
0.01
0.1
1
10
(A)
100
0.01
0.1
1
10
(A)
100
DRAIN CURRENT : I
D
DRAIN CURRENT : I
D
DRAIN CURRENT : I
D
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current(Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙΙ)
3/4
RRS100N03
Transistor
100
100
V
DS=10V
Ta=25°C
Pulsed
Pulsed
V
V
V
GS=4.0V
GS=4.5V
GS=10V
Ta= −25°C
Ta=25°C
10
1
10
Ta=75°C
Ta=125°C
0.1
1
0.01
0.01
0.1
1
10
(A)
100
0.1
1
10
(A)
100
DRAIN CURRENT : I
D
DRAIN CURRENT : I
D
Fig.11 Forward Transfer
Admittance vs.
Fig.10 Static Drain-Source
On-State Resistance
Drain Current
vs. Drain Current(
)
zMeasurement circuit
Pulse Width
90%
V
GS
ID
V
DS
50%
10%
50%
V
GS
DS
RL
V
10%
10%
D.U.T.
RG
V
DD
90%
90%
t
d(on)
td(off)
t
r
tr
t
on
t
off
Fig.13 Switching Time Waveforms
Fig.12 Switching Time Test Circuit
V
G
V
GS
ID
V
DS
Q
g
RL
V
GS
I
G (Const.)
D.U.T.
Q
gs
Qgd
RG
V
DD
Charge
Fig.14 Gate Charge Test Circuit
Fig.15 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Copyright © 2008 ROHM CO.,LTD.
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Appendix1-Rev2.0
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