RF1001T2DNZ [ROHM]
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| 型号： | RF1001T2DNZ |
| 厂家： | 
ROHM |
| 描述： | 暂无描述 二极管 快恢复二极管 |
| 文件： | 总4页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF1001T2D
Diodes
Fast recovery diodes
RF1001T2D
zApplications
zExternal dimensions (Unit : mm)
zStructure
General rectification
4.5±0.3
ꢀꢀꢀ 0.1
2.8±0.2
ꢀꢀꢀ 0.1
10.0±0.3
ꢀꢀꢀ 0.1
zFeatures
1) Cathode common type.
(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
①
1.2
zConstruction
1.3
0.8
Silicon epitaxial planar
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
Manufacture Date
①
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
200
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
200
V
Average rectified forward current (*1)
Forward current surge peak 60Hz 1cyc
）
10
Io
A
80
IFSM
Tj
A
（
・
Junction temperature
Storage temperature
150
℃
℃
-55 to +150
Tstg
(*1) Per chip Io/2
：
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Symbol
VF
Min.
Typ.
Max.
0.93
10
Unit
V
Conditions
IF=5A
-
-
-
-
0.87
0.01
15
IR
VR=200V
Reverse current
µA
Reverse recovery time
Thermal impedance
trr
30
ns
IF=0.5A,IR=1A,Irr=0.25*IR
JUNCTION TO CASE
θjc
-
2.5
℃/W
Rev.B
1/3
RF1001T2D
Diodes
zElectrical characteristic curves
1000
100
10
10000
1000
100
10
10
Ta=150℃
Ta=125℃
f=1MHz
Ta=150℃
Ta=25℃
1
Ta=125℃
Ta=75℃
Ta=-25℃
Ta=75℃
0.1
Ta=25℃
Ta=-25℃
0.01
1
0.001
0.1
0
100 200 300 400 500 600 700 800 900 100 110 120
1
0
0
0
0
50
100
150
200
0
10
20
30
REVERSE VOLTAGE:VR(V)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
VR-Ct CHARACTERISTICS
200
100
890
880
870
860
850
840
Ta=25℃
f=1MHz
VR=0V
Ta=25℃
IF=5A
Ta=25℃
195
190
185
180
175
170
165
160
155
150
90
80
70
60
50
40
30
20
10
0
VR=200V
n=30pcs
n=30pcs
n=10pcs
AVE:10.7nA
AVE:174.9pF
AVE:857.4mV
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
30
25
20
15
10
5
300
250
200
150
100
50
Ta=25℃
IF=0.5A
IR=1A
Ifsm
Irr=0.25*IR
n=10pcs
8.3ms 8.3ms
1cyc
AVE:14.5ns
AVE:167.0A
1
0
0
1
10
100
trr DISPERSION MAP
IFSM DISRESION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
20
15
10
5
1000
100
10
100
10
1
Mounted on epoxy board
1cyc
Ifsm
IF=5A
IM=100mA
Rth(j-a)
Rth(j-c)
8.3ms
DC
time
1ms
D=1/2
300us
Sin(θ＝180)
0
0.1
0
5
10
15
20
1
10
100
0.001
0.1
10
1000
TIME:t(ms)
TIME:t(s)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
IFSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
Rev.B
2/3
RF1001T2D
Diodes
30
25
20
15
10
5
30
25
20
15
10
5
30
25
20
15
10
5
No break at 30kV
No break at 30kV
Io
Io
0A
0V
0A
0V
VR
VR
t
t
D=t/T
VR=100V
Tj=150℃
D=t/T
VR=100V
Tj=150℃
DC
DC
T
T
D=1/2
D=1/2
Sin(θ＝180)
Sin(θ＝180)
0
0
0
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0
25
50
75
100
125
150
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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