RF1005TF6S_11 [ROHM]
Super Fast Recovery Diode; 超快速恢复二极管
| 型号： | RF1005TF6S_11 |
| 厂家： | 
ROHM |
| 描述： | Super Fast Recovery Diode |
| 文件： | 总4页 (文件大小：979K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Super Fast Recovery Diode
RF1005TF6S
Series
Dimensions (Unit : mm)
Structure
Standard Fast Recovery
+0.3
+0.3
10
−0.1
4.5
−0.1
+0.2
2.8−0.1
0.2
3.2
Applications
General rectification
(1)
(3)
Features
1)Single type.(TO-220)
2)High switching speed
1.02
1.12
Construction
0.76
Silicon epitaxial planer
(1)
(3)
+0.1
0.5
0.5
0.5
0.62 −0.05
2.6
2.54
2.54
ROHM : TO220NFM
Manufacture Year
Manufacture Week
Absolute maximum ratings (Tc=25C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Conditions
Limits
Unit
V
Symbol
VRM
VR
600
600
10
Duty 0.5
Direct voltage
V
60Hz half sin wave, Resistance load,
A
Average rectified forward current
Io
Tc=78C
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25C
IFSM
Forward current surge peak
100
150
55 to 150
A
Junction temperature
Storage temperature
Tj
Tstg
C
C
Electrical characteristics (Tj=25C)
Parameter
Conditions
Min.
Typ.
Max.
Unit
Symbol
VF
IF=10A
-
-
-
-
1.4
0.05
30
1.7
10
V
μA
Forward voltage
VR=600V
IR
Reverse current
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
40
ns
Reverse recovery time(*)
Thermal resistance(*)
(*) : Design assurance without measurement.
trr
-
3.5
C/ W
Rth(j-c)
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2011.05 - Rev.A
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1/3
Data Sheet
RF1005TF6S
ꢀ
Electrical characteristics curves
100
100000
10000
1000
100
1000
100
10
Tj=125 C
Tj=150 C
f=1MHz
Tj=25C
Tj=125C
Tj=150C
10
Tj=75 C
Tj=25C
Tj=25 C
Tj=75C
1
10
1
0.1
0
50
100
150
200
250
300
350
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
300
280
260
240
220
200
100
10
1
1400
1300
1200
1100
Tｊ=25C
VR=600V
Ta=25℃
f=1MHz
VR=0V
Tｊ=25C
IF=10A
n=20pcs
n=20pcs
n=10pcs
AVE : 270.6pF
AVE : 40.6nA
AVE : 1268mV
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
40
250
200
150
100
50
Tｊ=25 C
35
30
25
20
15
10
5
IF=0.5A
IR=1A
Irr=0.25×IR
n=10pcs
AVE : 192A
AVE : 29.0ns
IFSM
1cyc
IFSM
8.3ms 8.3ms
1cyc.
8.3ms
1
0
0
1
10
100
NUMBER OF CYCLES
trr DISPERSION MAP
IFSM DISRESION MAP
IFSM-CYCLE CHARACTERISTICS
30
25
20
15
10
5
10
1000
100
10
no break at 30kV
Rth(j-c)
IFSM
time
AVE
： 20.7kV
1
0
C=200pF
C=100pF
0.1
R=0
R=1.5k
1
10
100
0.001
0.01
0.1
1
10
100
1000
TIME : t(ms)
TIME : t(s)
IFSM-t CHARACTERISTICS
ESD DISPERSION MAP
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.A
Data Sheet
RF1005TF6S
ꢀ
Io
0A
0V
35
30
25
16
14
12
10
8
VR
D.C.
D.C.
t
D=t/T
R=480V
Tj=150C
D=0.8
D=0.5
V
T
D=0.8
D=0.5
half sin wave
D=0.2
20
15
10
5
half sin wave
D=0.1
D=0.0
D=0.2
D=0.1
6
4
D=0.05
2
0
0
0
3
6
9
12
15
18
0
30
60
90
120
150
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
CASE TEMPARATURE : Tc(C)
Derating Curveﾞ(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.A
Notice
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R1120A
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