RF101A2S [ROHM]
Fast recovery diode; 快恢复二极管
| 型号： | RF101A2S |
| 厂家： | 
ROHM |
| 描述： | Fast recovery diode |
| 文件： | 总4页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF101A2S
Diodes
Fast recovery diode
RF101A2S
zApplications
zExternal dimensions (Unit : mm)
General rectification
CATHODEꢀBAND
(GREEN)
φ0.6±0.1
zFeatures
1) Cylindrical mold type. (MSR)
2) Ultra Low VF.
3.0±0.2
29±1
29±1
φ2.5±0.2
3) Ultra high switching.
4) Low switching loss.
5) High ESD.
ROHM : MSR
①
②
Manufacture Date
zTaping specifications (Unit : mm)
IVORY
zConstruction
A
Stabdard dimension
H2
H2
Silicon epitaxial planar
Mark
BLUE
value (mm)
E
T-31 52.4±1.5
Ａ
T-32 26.0+0.4
-0
B
Ｂ
Ｃ
5.0±0.5
0.5ＭＡＸ
0
Ｄ
C
Ｅ
50.4±0.4
0.3ＭＡＸ
6.0±0.5
5.0±0.5
Ｆ
H1
H2
L1-L2
0.6ＭＡＸ
＊H1(6mm)：BROWN
L2
L1
F
D
H1
H1
cf : cumulative pitch tolerance w ith 20 pitch than ±1.5mm
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
200
200
V
Average rectified forward current (*1)
Forward current surge peak （t=100µs）
Junction temperature
1
20
Io
IFSM
Tj
A
A
150
℃
℃
Storage temperature
-55 to +150
Tstg
(*1) Mounted on epoxy board. 180°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Forward voltage
VF
IR
IF=1.0A
-
-
-
0.815 0.87
V
VR=200V
Reverse current
0.01
12
10
25
µA
ns
Reverse recovery time
trr
IF=0.5A,IR=1A,Irr=0.25*IR
1/3
RF101A2S
Diodes
zElectrical characteristic curves
100
10
1
Ta=150℃
1
10000
1000
100
10
Ta=125℃
f=1MHz
Ta=150℃
Ta=75℃
0.1
Ta=125℃
Ta=25℃
Ta=75℃
Ta=-25℃
1
0.01
Ta=25℃
0.1
Ta=-25℃
0.01
0.001
0
50
100
150
200
0
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0
5
10
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
15
20
25
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
850
840
830
820
810
800
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
Ta=25℃
IF=1A
n=30pcs
Ta=25℃
f=1MHz
VR=0V
Ta=25℃
VR=200V
n=30pcs
n=10pcs
AVE:51.4pF
AVE:11.1nA
AVE:818.6mV
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
30
25
20
15
10
5
200
150
100
50
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
1cyc
Ifsm
8.3ms 8.3ms
1cyc
8.3ms
AVE:12.2ns
AVE:63.0A
0
0
1
1
10
100
trr DISPERSION MAP
IFSM DISRESION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
IF=0.5A
1000
100
10
1000
100
10
2
Rth(j-a)
Ifsm
Rth(j-l)
IM=1mA
time(s)
td=300us
DC
1.5
1
t
D=1/2
Sin(θ＝180)
Rth(j-c)
0.5
0
1
0
0.5
1
1.5
2
0.001 0.01
0.1
1
10
100
1000
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2/3
RF101A2S
Diodes
30
25
20
15
10
5
3
3
2
1
0
Io
0A
0V
Io
No break at 30kV
0A
0V
VR
VR
t
t
D=t/T
VR=100V
Tj=150℃
D=t/T
VR=100V
Tj=150℃
T
2
T
DC
D=1/2
DC
AVE:22.6kV
D=1/2
1
0
Sin(θ＝180)
Sin(θ＝180)
0
0
25
50
75
100
125
150
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(℃)
Derating Curve(Io-Tc)
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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