RF1001T2D_11 [ROHM]
Fast recovery diodes; 快恢复二极管
| 型号： | RF1001T2D_11 |
| 厂家： | 
ROHM |
| 描述： | Fast recovery diodes |
| 文件： | 总4页 (文件大小：996K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Fast recovery diodes
RF1001T2D
Applications
Dimensions (Unit : mm)
Structure
General rectification
4.5 0.3
0.1
2.8 0.2
0.1
10.0 0.3
0.1
Features
(1) (2) (3)
1) Cathode common type.
(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
1.2
1.3
0.8
Construction
Silicon epitaxial planar
0.7 0.1
0.05
(1) (2) (3)
2.6 0.5
ROHM : TO220FN
Manufacture Date
Absolute maximum ratings (Ta=25C)
Parameter
Limits
200
200
10
Symbol
VRM
VR
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
V
V
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)
Junction temperature
Io
A
80
IFSM
Tj
A
150
C
C
Storage temoerature
55 to 150
Tstg
(*1)Business frequencies, Rating of R-load, Tc=126 C. 1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Conditions
Symbol
VF
Min.
Typ.
0.87
0.01
15
Max.
0.93
10
Unit
V
Forward voltage
Reverse current
-
-
-
-
IF=5A
VR=200V
IR
μA
Reverse recovery time
Thermal impedance
trr
30
ns
IF=0.5A, IR=1A, Irr=0.25*IR
JUNCTION TO CASE
-
2.5
j-c
C/W
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2011.05 - Rev.D
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1/3
Data Sheet
RF1001T2D
ꢀ
Electrical characteristics curves
10000
1000
100
10
1000
100
10
10
Ta=150C
Ta=125C
Ta=150C
f=1MHz
Ta=25C
1
0.1
Ta=125C
Ta=75C
Ta=75C
Ta=-25C
Ta=25C
Ta=-25C
0.01
0.001
1
0
100 200 300 400 500 600 700 800 900 100 110 120
0.1
1
0
0
0
0
50
100
150
200
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
200
100
90
80
70
60
50
40
30
20
10
0
890
Ta=25C
f=1MHz
VR=0V
Ta=25C
IF=5A
Ta=25C
VR=200V
195
190
185
180
175
170
165
160
155
150
880
870
860
850
840
n=30pcs
n=30pcs
n=10pcs
AVE:10.7nA
AVE:174.9pF
AVE:857.4mV
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
30
25
20
15
10
5
300
250
200
150
100
50
Ta=25C
IF=0.5A
Ifsm
IR=1A
Irr=0.25*IR
n=10pcs
8.3ms 8.3ms
1cyc
AVE:14.5ns
AVE:167.0A
1
0
0
1
10
100
trr DISPERSION MAP
IFSM DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
20
15
10
5
1000
100
10
100
10
1
Mounted on epoxy board
Ifsm
1cyc
IM=100mA
IF=5A
Rth(j-a)
Rth(j-c)
8.3ms
DC
1ms
time
300us
D=1/2
Sin(θ=180)
0
0.1
0
5
10
15
20
1
10
100
0.001
0.01
0.1
1
10
100
1000
TIME:t(ms)
FSM-t CHARACTERISTICS
TIME:t(s)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
I
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.D
Data Sheet
RF1001T2D
ꢀ
30
25
30
25
20
15
10
5
30
25
20
15
10
5
No break at 30kV
No break at 30kV
Io
Io
0A
0V
0A
0V
VR
VR
t
t
D=t/T
D=t/T
VR=100V
VR=100V
Tj=150C
20
DC
Tj=150C
T
T
DC
15
D=1/2
D=1/2
10
Sin(=180)
Sin(=180)
5
0
0
0
C=200pF
R=0
C=100pF
R=1.5k
0
25
50
75
100
125
150
0
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta(C)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
Derating Curve"(Io-Ta)
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.D
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