2SA1774EBQ [ROHM]
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, EMT3F, 3 PIN;
| 型号： | 2SA1774EBQ |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, EMT3F, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General Purpose Transistor (50V, 0.15A)
2SA1774EB
Applications
Dimensions (Unit : mm)
General purpose small signal amplifier.
EMT3F
Features
1) Excellent hFE linearity.
2) Complements the 2SC4617EB.
1.6
0.7
0.26
(3)
Structure
PNP silicon epitaxial.
planar transistor.
(1)
(2)
0.13
0.5 0.5
1.0
Each lead has same dimensions
(1) Base
Abbreviated symbol : F∗
(2) Emitter
(3) Collector
∗ = Denotes hFE
Absolute maximum (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
−60
−50
V
−6
V
I
C
−150
−200
150
Collector current
mA
∗1
∗2
I
CP
Power dissipation
P
D
mW
°C
Junction temperature
Range of storage temperature
Tj
150
Tstg
−55 to +150
°C
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
Conditions
BVCEO
BVCBO
BVEBO
−50
−60
−6
−
V
V
I
I
I
C
=−1mA
=−50μA
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
C
−
−
V
E=−50μA
I
CBO
EBO
CE(sat)
FE
−
−100
−100
−0.5
390
−
nA
nA
V
V
CB=−60V
V
EB=−6V
/I =−50mA/−5mA
CE=−6V, I =−1mA
I
−
−
Emitter cutoff current
V
−
−
I
C B
Collector-emitter saturation voltage
DC current gain
h
120
−
−
−
V
V
V
C
f
T
140
4.0
MHz
pF
CE=−12V, I
CE=−12V, I
E
=2mA, f=100MHz
=0A, f=1MHz
Transition frequency
Cob
−
5.0
E
Output capacitance
hFE rank categories
Rank
Q
R
hFE
120 to 270 180 to 390
www.rohm.com
2009.12 - Rev.C
1/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
2SA1774EB
Data Sheet
Electrical characterristic curves
−35.0
−10
−8
−100
−80
−50
VCE= −6V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−20
−10
−500
−450
−400
−350
−300
−40˚C
−5
−250
−200
−6
−4
−2
−60
−40
−20
−2
−1
−150
−100
−0.5
−50μA
−3.5μA
−0.2
−0.1
I
B
=0
IB=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE
0
−0.4
−0.8
−1.2
−1.6 −2.0
0
−1
−2
−3
−4
−5
V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
(V)
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
Fig.2 Grounded emitter output
characteristics (I)
Fig.3 Grounded emitter output
characteristics (II)
500
500
−1
V
CE= −5V
−3V
−1V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−0.5
−40˚C
200
100
50
200
100
−0.2
−0.1
I
C/I
B
=
50
20
10
50
−0.05
V
CE= −6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : I mA)
C (
Fig.4 DC current gain vs.
collector current (I)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
Fig.5 DC current gain vs.
collector current (II)
1000
500
−1
20
Ta=25˚C
CE= −12V
lC/lB=10
Ta=25˚C
f=1MHz
V
I
I
E
=
=
0A
0A
−0.5
C
10
5
200
100
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
2
−0.05
50
0.5
1
2
5
10 20
50 100
−0.5 −1
−2
−5
−10 −20
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
EMITTER CURRENT : I (mA)
E
COLLECTOR CURRENT : I
C
(
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter inputcapacitance vs.
emitter-base voltage
www.rohm.com
2009.12 - Rev.C
2/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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