2SA1774G-S-AE3-R [UTC]
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3;
| 型号： | 2SA1774G-S-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE PACKAGE-3 光电二极管 晶体管 |
| 文件： | 总3页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
2SA1774
PNP EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE
TRANSISTOR
FEATURES
* Excellent hFE linearity
* Complements the UTC 2SC4617
ORDERING INFORMATION
Ordering Number
Pin Assignment
Package
Packing
Lead Free
Halogen Free
1
E
E
E
2
B
B
B
3
C
C
C
2SA1774L-x-AE3-R
2SA1774L-x-AN3-R
2SA1774L-x-AQ3-R
2SA1774G-x-AE3-R
2SA1774G-x-AN3-R
2SA1774G-x-AQ3-R
SOT-23
SOT-523
SOT-723
Tape Reel
Tape Reel
Tape Reel
Note: Pin Assignment: E: EMITTER
B: BASE C: COLLECTOR
MARKING
L:Lead Free
G:Halogen Free
A5
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R221-011.D
2SA1774
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-60
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
V
V
A
-50
-6
-0.15
0.22
SOT-23
Collector Power Dissipation
SOT-523
SOT-723
PC
0.15
W
0.125
150
Junction Temperature
Storage Temperature
TJ
°С
°С
TSTG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°С ~70°С operating temperature range
and assured by design from –20°С ~85°С.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified.)
PARAMETER
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
TEST CONDITIONS
IC = -50µA
MIN
-60
-50
-6
TYP
MAX UNIT
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
V
V
V
IC = -1mA
IE = -50µA
VCB= -60V
-0.1
-0.1
560
-0.5
µA
µA
Emitter Cutoff Current
IEBO
VEB= -6V
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Transition Frequency
hFE
VCE= -6V, IC= -1mA
120
VCE (SAT) IC=-50mA, IB=−5mA
V
fT
VCE= -12V, IE=2mA, f=100MHz
140
4.0
MHz
pF
Output Capacitance
COB
VCB= -12V, IE=0A, f=1MHz
5.0
CLASSIFICATION OF hFE1
RANK
Q
R
S
Range
120 ~ 270
180 ~ 390
270 ~ 560
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R221-011.D
www.unisonic.com.tw
2SA1774
PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
3 of 3
QW-R221-011.D
www.unisonic.com.tw
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