2SA1774QGP [CHENMKO]
Transistor,;
| 型号： | 2SA1774QGP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总3页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
2SA1774GP
SURFACE MOUNT
General Purpose PNP Transistor
VOLTAGE 50 Volts CURRENT 0.15 Ampere
APPLICATION
* Small Power Amplifier .
FEATURE
SC-75/SOT-416
* Surface mount package. (SC-75/SOT-416)
* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-50mA)
* Low cob. Cob=4.0pF(Typ.)
* PC= 150mW (Collector power dissipation).
0.1
0.2±
0.2±
0.05
0.5
0.5
1.6±0.2
1.0±0.1
0.3±
CONSTRUCTION
0.1
0.05
0.1
0.05
* PNP Silicon Transistor
* Epitaxial planner type
0.8±0.1
0.6~0.9
0~0.1
0.15±0.05
0.1Min.
(3)
(2)
1.6±0.2
C
E
CIRCUIT
(1)
B
SC-75/SOT-416
Dimensions in millimeters
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Open Emitter
SYMBOL
VCBO
MIN.
-
MAX.
-60
UNITS
Volts
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Open Base
VCEO
VEBO
IC
-
-50
-6
Volts
Volts
mAmps
mW
Open Collector
-
-
-
-150
150
Collector Power Dissipation
Storage Temperature
Junction Temperature
TA ≤ 25OC
PTOT
TSTG
TJ
-55
-
+150
+150
oC
oC
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
2003-12
RATING CHARACTERISTICS ( 2SA1774GP )
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
Collector Cut-off Current
CONDITION
VCB=-60V
SYMBOL
ICBO
MIN.
-
TYPE
-
MAX.
-0.1
UNITS
uA
Emitter Cut-off Current
DC Current Gain
VEB=-6V
IEBO
-
-
-
-0.1
560
uA
VCE=-6V; Note 1
IC=-1mA; Note 2
hFE
120
Collector-Emitter Saturation Voltage
Collector-Emitter Breakdown Voltage
Output Collector Capacitance
Transition Frequency
IC=-50mA; IB=-5mA
IC=-1uA
VCEsat
VCEO
Cob
-
-
-
-0.5
Volts
Volts
pF
-50
-
IE=ie=0; VCB=-12V;
f=1MHz
-
-
4.0
5.0
IE=2mA; VCE=-12V;
f=30MHz
fT
140
-
MHz
Note :
1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02.
2. hFE: Classification Q: 120 to 270, R: 180 to 390, S: 270 to 560
RATING CHARACTERISTIC CURVES ( 2SA1774GP )
Fig.2 Grounded emitter output
characteristics (1)
Fig.3 Grounded emitter output
characteristics (2)
Fig.1 Grounded emitter propagation
characteristics
−35.0
−50
−100
−10
V
CE=−6V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−20
−10
−500
−450
−400
−350
−300
−40˚C
−80
−8
−5
−250
−200
−60
−40
−20
−6
−4
−2
−2
−1
−150
−100
−0.5
−50µA
−3.5µA
−0.2
−0.1
I
B
=0
IB=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE
0
−0.4
−0.8
−1.2
−1.6 −2.0
0
−1
−2
−3
−4
−5
V)
(
V)
COLLECTOR TO MITTER VOLTAGE : VCE
(
V)
COLLECTOR TO EMITTER VOLTAGE : VCE (
RATING CHARACTERISTIC CURVES ( 2SA1774PT )
Fig.4 Collector-emitter saturation voltage
Fig.5 DC current gain vs.
collector current
Fig. 6 Gain bandwidth product
vs. emitter current
vs. collector current
500
−1
1000
lC/lB=10
Ta=100˚C
25˚C
Ta=25˚C
CE=−12V
V
−0.5
500
−40˚C
200
100
50
−0.2
−0.1
200
100
Ta=100˚C
25˚C
−40˚C
−0.05
50
V
CE=−6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
0.5
1
2
5
10 20
50 100
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : I (mA)
E
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