2SA1774HT2LQ [ROHM]
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN;
| 型号： | 2SA1774HT2LQ |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN |
| 文件： | 总3页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SA1037AK / 2SA1576A / 2SA1774 /
2SA1774H / 2SA2029 / 2SA933AS
Transistors
General Purpose Transistor
(−50V, −0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA1774H /
2SA2029 / 2SA933AS
zFeatures
zExternal dimensions (Units : mm)
1) Excellent hFE linearity.
2) Complements the 2SC2412K /
2SC4081 / 2SC4617 /
2SC4617H / 2SC5658 /
2SC1740S.
2SA1037AK
2SA1576A
1.25
2.1
1.6
2.8
0.1to0.4
0.3to0.6
Each lead has same dimensions
Each lead has same dimensions
zStructure
Epitaxial planar type.
PNP silicon transistor
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
Abbreviated symbol : F
Abbreviated symbol : F
2SA1774
2SA1774H
1.6
0.85
( )
1
( )
2
( )
2
( )
3
( )
1
( )
3
0.8
1.6
0.1Min.
Each lead has same dimensions
ROHM : EMT3 Flat lead
EIAJ : SC-89
(1) Emitter
(2) Base
(3) Collecto
(1) Baser
(2) Emitter
(3) Collector
ROHM : EMT3
EIAJ : SC-75A
Abbreviated symbol : F
Abbreviated symbol : F
2SA2029
2SA933AS
4
2
1.2
0.2 0.8 0.2
( )
2
(3)
0.45
( )
1
0.45
2.5 0.5
0.15Max.
5
2
( )
1
(
)
(
)
3
Taping specifications
(1) Base
(2) Emitter
(3) Collector
ROHM : VMT3
EIAJ :
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
Abbreviated symbol : F
Denotes hFE
2SA1037AK / 2SA1576A / 2SA1774 /
2SA1774H / 2SA2029 / 2SA933AS
Transistors
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−60
Unit
VCBO
VCEO
VEBO
V
V
−50
−6
V
I
C
−0.15
0.2
A (DC)
Collector current
2SA1037AK, 2SA1576A
Collector power
2SA2029, 2SA1774H, 2SA1774
dissipation
P
C
0.15
0.3
W
2SA933AS
Tj
150
˚C
˚C
Junction temperature
Tstg
−
55~+150
Storage temperature
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ. Max.
Unit
V
Conditions
Collector-base breakdown voltage
BVCBO
−60
-
-
-
I
I
I
C
=
=
−50µA
−1µA
Collector-emitter breakdown voltage BVCEO
−50
-
V
C
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
−6
-
-
V
E
=
−50µA
I
CBO
EBO
CE(sat)
FE
-
-
-
−0.1
−0.1
−0.5
560
-
µA
µA
V
V
CB
EB
=
−60V
Emitter cutoff current
I
-
V
=
−6V
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
V
-
-
I
C/I
B
=
−50mA/−5mA
h
120
-
-
V
V
V
CE
CE
CB
=
=
=
−6V, I −1mA
C=
f
T
-
-
140
4.0
MHz
pF
−12V, I
−12V, I
E
E
=
=
2mA, f
=30MHz
Output capacitance
Cob
5.0
0A, f 1MHz
=
zPackaging specifications and hFE
Package
Code
Taping
TL
T146
T106
T2L
TP
Basic ordering
unit (pieces)
3000
-
3000
3000
8000
5000
Type
hFE
2SA2029
2SA1037AK
2SA1576A
2SA1774
2SA1774H
2SA933AS
QRS
QRS
QRS
QRS
QRS
QRS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
hFE values are classified as follows:
Item
Q
R
S
hFE
120~270
180~390
270~560
2SA1037AK / 2SA1576A / 2SA1774 /
2SA1774H / 2SA2029 / 2SA933AS
Transistors
zElectrical characteristic curves
−35.0
−100
−50
−10
−8
V
CE=−6V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−40˚C
−31.5
−20
−10
−500
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−450
−400
−350
−300
−80
−60
−40
−20
−5
−250
−200
−6
−4
−2
−2
−1
−150
−100
−0.5
−50µA
−3.5µA
−0.2
−0.1
I
B
=0
IB=0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE
0
−0.4
−0.8
−1.2
−1.6 −2.0
0
−1
−2
−3
−4
−5
V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
(V)
COLLECTOR TO MITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics (I)
Fig.1 Grounded emitter propagation
characteristics
Fig.3 Grounded emitter output
characteristics (II)
500
−1
500
Ta=25˚C
Ta=100˚C
25˚C
V
CE=−5V
−3V
−1V
Ta=25˚C
−0.5
−40˚C
200
100
50
200
100
−0.2
−0.1
I
C/I
B=
50
20
10
50
−0.05
V
CE=−6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : I
C
(
Fig.5 DC current gain vs.
collector current (II)
Fig.4 DC current gain vs.
collector current (I)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
1000
500
20
−1
Ta=25˚C
CE=−12V
Ta=25˚C
f=1MHz
lC/lB=10
V
I
I
E
=
=
0A
0A
−0.5
C
10
5
200
100
−0.2
−0.1
Ta=100˚C
25˚C
−40˚C
2
−0.05
50
−0.5 −1
−2
−5
−10 −20
0.5
1
2
5
10 20
50 100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : I (mA)
E
COLLECTOR CURRENT : I
C
(
Fig.9 Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Emitter inputcapacitance vs.
emitter-base voltage
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN
ROHM
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Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN
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