2SA1774EBS [ROHM]
150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, EMT3F, 3 PIN;
| 型号： | 2SA1774EBS |
| 厂家： | 
ROHM |
| 描述： | 150mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, EMT3F, 3 PIN 放大器 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SA1774EB
Transistors
General Purpose Transistor
(−50V, −0.15A)
2SA1774EB
zApplications
zDimensions (Unit : mm)
General purpose small signal amplifier
EMT3F
zFeatures
1) Excellent hFE linearity.
2) Complements the 2SC4617EB.
1.6
0.7
0.26
(3)
zStructure
PNP silicon epitaxial
planar transistor
(1)
0.5 0.5
1.0
(2)
0.13
Each lead has same dimensions
(1) Base
(2) Emitter
(3) Collector
Abbreviated symbol : F
zAbsolute maximum (Ta=25°C)
Parameter
Symbol
Limits
−60
Unit
V
VCBO
VCEO
VEBO
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
−50
V
−6
V
I
C
−150
−200
150
Collector current
mA
∗1
∗2
I
CP
Power dissipation
P
D
mW
°C
Junction temperature
Range of storage temperature
Tj
150
Tstg
−55 to +150
°C
∗1 Pw=1ms Single pulse
∗2 Each terminal mounted on a recommended land
1/3
2SA1774EB
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
BVCEO
BVCBO
BVEBO
−50
−60
−6
−
I
I
I
C
=−1mA
=−50µA
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
−
−
V
C
−
−
V
E
=−50µA
I
CBO
EBO
CE(sat)
FE
−
−100
−100
−0.5
560
−
nA
nA
V
V
CB=−60V
V
EB=−6V
/I =−50mA/−5mA
CE=−6V, I =−1mA
I
−
−
Emitter cutoff current
V
−
−
I
C B
Collector-emitter saturation voltage
DC current gain
h
82
−
−
−
V
V
V
C
f
T
140
4.0
MHz
pF
CE=−12V, I
CE=−12V, I
E
=2mA, f=100MHz
=0A, f=1MHz
Transition frequency
Cob
−
5.0
E
Output capacitance
hFE rank categories
Rank
P
Q
R
S
hFE
82 to 180 120 to 270 180 to 390 270 to 560
zElectrical characterristic curves
−35.0
−10
−8
−100
−50
Ta=25˚C
Ta=25˚C
V
CE= −6V
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
Ta=100˚C
25˚C
−20
−10
−500
−450
−400
−350
−300
−40˚C
−80
−60
−40
−20
−5
−250
−200
−6
−4
−2
−2
−1
−150
−100
−0.5
−50µA
−3.5µA
−0.2
−0.1
I
B
=0
IB=0
0
−0.4
−0.8
−1.2
−1.6 −2.0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
BASE TO EMITTER VOLTAGE : VBE
0
−1
−2
−3
−4
−5
V)
COLLECTOR TO EMITTER VOLTAGE : VCE
(
COLLECTOR TO MITTER VOLTAGE : VCE (V)
(V)
Fig.2 Grounded emitter output
characteristics (I)
Fig.1 Grounded emitter propagation
characteristics
Fig.3 Grounded emitter output
characteristics (II)
500
500
−1
V
CE= −5V
−3V
−1V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−0.5
−40˚C
200
100
50
200
100
−0.2
−0.1
I
C/I
B=
50
20
10
50
−0.05
V
CE= −6V
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : I
C
(
COLLECTOR CURRENT : I mA)
C (
Fig.4 DC current gain vs.
collector current (I)
Fig.6 Collector-emitter saturation
voltage vs. collector current (I)
Fig.5 DC current gain vs.
collector current (II)
2/3
2SA1774EB
Transistors
1000
500
20
10
−1
Ta=25˚C
CE= −12V
Ta=25˚C
f=1MHz
lC/lB=10
V
I
I
E
=
=
0A
0A
−0.5
C
200
100
−0.2
5
2
Ta=100˚C
25˚C
−40˚C
−0.1
−0.05
50
−0.5 −1
−2
−5
−10 −20
0.5
1
2
5
10 20
50 100
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : I (mA)
E
COLLECTOR CURRENT : I
C
(
Fig.9 Collector output capacitance vs.
collector-base voltage
Fig.7 Collector-emitter saturation
voltage vs. collector current (II)
Fig.8 Gain bandwidth product vs.
emitter current
Emitter inputcapacitance vs.
emitter-base voltage
3/3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
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for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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