RF5117_1 [RFMD]
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER; 3V ， 1.8GHz的至2.8GHz线性功率放大器
| 型号： | RF5117_1 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER |
| 文件： | 总12页 (文件大小：375K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF5117
3V, 1.8GHz TO 2.8GHz
LINEAR POWER AMPLIFIER
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 3 x 3
Features
16
15
14
13
Single 3.3V Power Supply
RF IN
BIAS GND1
PWR SEN
PWR REF
1
2
3
4
12 RF OUT
11 RF OUT
10 RF OUT
+30dBm Saturated Output
Power
26dB Small Signal Gain
High Linearity
Bias
9
NC
1800MHz to 2800MHz Fre-
quency Range
5
6
7
8
+17dBm PO, 11G, <3% EVM
Applications
IEEE802.11B WLAN Applications
IEEE802.11G WLAN Applications
2.5GHz ISM Band Applications
Functional Block Diagram
Product Description
The RF5117 is a linear, medium-power, high-efficiency amplifier IC designed specif-
ically for battery-powered WLAN applications such as PC cards, mini PCI, and com-
pact flash applications. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed
for use as the final RF amplifier in 2.5GHz WLAN and other spread-spectrum trans-
mitters. The device is provided in a 3mmx3mm, 16-pin, leadless chip carrier with a
backside ground. The RF5117 is designed to maintain linearity over a wide range of
supply voltage and power output.
Commercial and Consumer Sys-
tems
Portable Battery-Powered Equip-
ment
Spread-Spectrum and MMDS
Systems
Ordering Information
RF5117
RF5117PCBA-41X
3V, 1.8GHz to 2.8GHz Linear Power Amplifier
Fully Assembled Evaluation Board
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
9
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A13 DS071018
1 of 12
RF5117
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Supply Voltage
Rating
-0.5 to +6.0
-0.5 to 3.5
Unit
V
DC
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Power Control Voltage (V
)
V
REG
DC Supply Current
Input RF Power
600
+10
mA
dBm
°C
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Operating Ambient Temperature
Storage Temperature
-40 to +85
-40 to +150
JEDEC Level 2
°C
Moisture Sensitivity
Specification
Parameter
Overall
Unit
Condition
Min.
Typ.
Max.
T=25 °C, V =3.0V, V
=2.7V,
REG
CC
Freq=2450MHz, circuit per evaluation board
schematic.
Frequency Range
1800 to 2800
MHz
Maximum Linear Output Power
With 802.11B modulation (11Mbit/s) and
meeting 802.11B spectral mask.
VCC=3.0V
22
27
dBm
dBm
%
VCC=5.0V
Linear Efficiency
Error Vector Magnitude (EVM)
25
2.5
%
P =17dBm, EVM increases over 11g,
O
54MBPS signal input
Small Signal Gain
24
30
26
28.5
dB
P =-7dBm
IN
Reverse Isolation
dB
Second Harmonic
-35
-38
dBc
dBc
802.11B Adjacent Channel Power
-32
-52
P
=21dBm, V =3.0V
OUT CC
Alternate Channel Power
Isolation
-56
45
dBc
dB
Ω
P
=21dBm, V =3.0V
OUT CC
35
In “OFF” state, P =-5.0dBm
IN
Input Impedance
Input VSWR
50
With external matching
With external matching
2:1
Power Down
V
“ON”
2.1
2.7
0
3.0
0.5
V
V
Voltage supplied to control input; device is
“ON”
REG
V
“OFF”
Voltage supplied to control input; device is
“OFF”
REG
Power Supply
Operating Voltage
Current Consumption
3.0 to 5.0
500
V
mA
mA
At max output power
200
220
P
=21dBm, V =3.0V
OUT CC
110
5
mA
mA
mA
Idle current, V =3.0V, V
=2.7V
CC
REG
V
Current (Total)
10
15
V
=3.0V
=5.0V
REG
CC
CC
10
V
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2 of 12
Rev A13 DS071018
RF5117
Pin
1
Function
RF IN
Description
Interface Schematic
RF input. Matching network with DC block required, see evaluation board
schematic for details.
VCC
Bond Wire
Inductance
RF IN
BIAS
Ground for first stage bias circuit. Not connected.
See pin 5.
2
3
BIAS GND1
PWR SEN
The PWR SEN and PWR REF pins can be used in conjunction with an exter-
nal feedback path to provide an RF power control function for the RF5117.
The power control function is based on sampling the RF drive to the final
stage of the RF5117.
RF OUT
PWR SEN
PWR REF
BIAS
Same as pin 3.
See pin 3.
4
5
PWR REF
VREG1
This pin requires a regulated supply to maintain nominal bias current.
VREG1
VREG2
BIAS
BIAS
BIAS
GND1
GND2
Same as pin 5.
See pin 5.
See pin 5.
6
7
VREG2
BIAS GND2
Ground for second stage bias circuit. For best performance connect to
ground with a 10nH inductor.
Not connected.
Not connected.
8
9
NC
NC
RF output and bias for the output stage. The power supply for the output
transistor needs to be supplied to this pin. This can be done through a
quarter-wave length microstrip line that is RF grounded at the other end, or
through an RF inductor that supports the required DC currents.
10
RF OUT
RF OUT
BIAS
Same as pin 10.
Same as pin 10.
See pin 10.
See pin 10.
11
12
13
RF OUT
RF OUT
VCC
Interstage match and bias for first stage output. Connect interstage match- See pin 1.
ing capacitor to this pad with a short trace. Connect low-frequency bypass
capacitors to this pin with a long trace. See evaluation board layout for
details.
Same as pin 13.
Not connected.
Not connected.
See pin 1.
14
15
16
VCC
NC
NC
Ground connection. The backside of the package should be connected to
the ground plane through a short path, i.e., vias under the device will be
required.
Pkg
Base
GND
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A13 DS071018
3 of 12
RF5117
Package Drawing
2 PLCS
0.10 C A
0.05 C
0.90
0.85
0.05
0.00
-A-
3.00
0.70
0.65
2 PLCS
1.50 TYP
2
0.10 C B
12°
MAX
3.00
0.10 C B
2 PLCS
-B-
-C-
1.37 TYP
SEATING
PLANE
2.75 SQ
0.10 C A
2 PLCS
0.60
0.24
TYP
0.10 M C A B
0.30
0.18
PIN 1 ID
R.20
1.45
SQ.
1.15
Dimensions in mm.
NOTES:
1. Shaded pin is lead 1.
0.50
0.30
Pin 1 identifier must exist on top surface
of package by identification mark or
feature on the package body. Exact
shape and size is optional.
2
0.50
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
4 of 12
Rev A13 DS071018
RF5117
Theory of Operation and Application Information
The RF5117 is a two-stage device with a nominal gain of 26dB in the 2.4GHz to 2.5GHz ISM band. The RF5117 is designed pri-
marily for IEEE802.11B/11G WLAN applications where the available supply voltage and current are limited. This amplifier will
operate to (and below) the lowest expected voltage made available by a typical PCMCIA slot in a laptop PC, and will maintain
required linearity at decreased supply voltages.
The RF5117 requires only a single positive supply of 3.0V nominal (or greater) to operate to full specifications. Power control is
provided through two bias control input pins (VREG1 and VREG2), but in most applications these are tied together and used as a
single control input.
There is some external matching on the input and output of the part, thus allowing the part to be used in other applications
outside the 2.4GHz to 2.5GHz ISM band (such as MMDS). Both the input and the output of the device need a series DC-block-
ing capacitor. In some cases, a capacitor used as a matching component can also serve as the blocking cap. The circuit used
on the evaluation board is optimized for 3.0V nominal applications.
For best results, the PA circuit layout from the evaluation board should be copied as closely as possible, particularly the ground
layout and ground vias. Other configurations may also work, but the design process is much easier and quicker if the layout is
copied from the RF5117 evaluation board. Gerber files of our designs can be provided upon request.
The RF5117 is not a difficult part to implement, but care in circuit layout and component selection is always advisable when
designing circuits to operate at 2.5GHz. The most critical passive components in the circuit are the input, interstage and out-
put matching components (C1, C5, and C11). In these cases, high-Q capacitors suitable for RF applications are used on our
evaluation board (a BOM is available on request). High-Q parts are not required in every design, but it is very strongly recom-
mended that the original design be implemented with the same or similar parts used on our evaluation board. Then, less costly
components can be substituted in their place, making it easy to test the impact of cheaper components on performance. Gen-
eral RFMD experience has indicated that the slightly higher cost of better quality passive components is more than offset by
the significant improvements in production yields in large-volume manufacturing. Using less costly components will typically
result in a 1 to 2dB degradation in gain.
The interstage matching capacitor, C11, along with the combined inductance of the internal bond wire, the short length of cir-
cuit board trace, and the parasitic inductance of this capacitor, tunes the peak of the small-signal gain response. The trace
length between C11 and pins 13 and 14 should be kept as short as possible.
In practice, VCC and the supply for the output stage bias will be tied to the same supply. It is important to isolate C11 from other
RF and low-frequency bypass capacitors on this supply line. This can be accomplished using a suitably long transmission line
which is RF shorted on the other end. Ideally the length of this line will be a quarter wavelength, but it only needs to be long
enough so that the effects of other supply bypass capacitors on the interstage match are minimized. If board space is a con-
cern, this isolation can also be accomplished with an RF choke inductor or ferrite bead. Additionally, a higher-value capacitor
than shown on the application schematic can be used if bypass capacitors must be closer. A Smith Chart can be used to pro-
vide initial guidance for value selection and parts placement. Be aware of the self-resonant frequency (SRF) of higher-valued
capacitors. The SRF must be above the frequency of operation.
The output matching capacitor is C5, located 130mils from the IC (this distance should be duplicated as closely as possible).
Due to variations in FR-4 characteristics and PCB manufacturer process variations, some benefit will be obtained from small
adjustments to these transmission line lengths when the evaluation board layout is duplicated on another design. Prior to full
rate manufacturing, the board layout of early prototypes should include some additional exposed ground areas around C5 to
optimize this part of the circuit. A Smith Chart can help determine the desired value and transmission line length, which can be
similarly adjusted on the board prior to production.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A13 DS071018
5 of 12
RF5117
The RF5117 can be used with an IEEE802.11g modulation with a few modifications. Pin 2 should not be connected to ground
and a 4.7kΩ resistor should be placed on the VREG1 line. This is done on the evaluation board by cutting the VREG1 trace and
placing the resistor on the open line. All other components should not be modified and the IEEE802.11g schematic should be
followed as closely as possible.
Power sensing is implemented with the PWR SEN and PWR REF lines. The outputs of these pins are transistor collectors and
need to be pulled up to the supply through a resistor. PWR REF provides an output current proportional to the output stage bias
current, and PWR SEN provides an output current proportional to the total (RF and bias) current of the output stage. The pull-
up resistors convert these currents to voltages, and the voltage difference between these two pins is proportional to the RF
current. See the graph, “VREF-VSENSE versus POUT”, for the response of this signal. This difference signal can be fed to a power
control circuit elsewhere in the end product, or it can be processed at the PA with additional circuitry and used to adjust the
VREG voltage(s) to implement automatic level control. Contact RFMD Sales or Applications Engineering for additional data and
guidance in using this feature.
The RF5117 has primarily been characterized with a voltage on VREG1 and VREG2 of 2.7VDC. However, the RF5117 will operate
from a wide range of control voltages. If you prefer to use a control voltage that is significantly different than 2.7VDC, contact
RFMD Sales or Applications Engineering for additional data and guidance.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
6 of 12
Rev A13 DS071018
RF5117
Evaluation Board Schematic - IEEE802.11b
2400MHz to 2483MHz
VCC
C23
1 μF
C14
1 nF
C22
10 μF
C12
1 nF
Part is Backside Grounded.
*2
C11
6.8 pF
JOH
C10
1 nF
L3
1.2 nH
Murata
C9
10 pF
L1
12 nH
C1
10 pF
16
15
14
13
50 Ω μstrip
J1
RF IN
1
2
3
4
12
11
10
9
TL1 = 130 mil (50 Ω)
C17
2.7 pF
JOH
TL1
C5
R2
390 Ω
J2
RF OUT
50 Ω μstrip
C8
10 pF
2.7 pF
JOH
R1
390 Ω
*1
Bias
C2
1 nF
C15
1 nF
5
6
7
8
5117400B
L2
PWR SENSE
PS REF
10 nH
P1
1
P2
C16
1 nF
C3
1 nF
C13
1 nF
1
P1-1
P1-2
PS REF
PWR SENSE
GND
GND
GND
VCC
2
2
3
3
P2-3
P3-1
VREG1 VREG2
Notes:
1. C7 - 130 mils from chip.
P1-4
P1-5
VREG1
VREG2
CON3
4
5
P3
1
2. Place C11 as close to chip as possible.
VCC
GND
CON5
CON1
P4
1
CON1
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A13 DS071018
7 of 12
RF5117
Evaluation Board Schematic - IEEE802.11g
2400MHz to 2483MHz
C23
1 μF
VCC
C14
1 nF
C22
10 μF
C12
1 nF
Place C11 as close
to chip as possible
Part is Backside Grounded.
*3
C11
6.8 pF
JOH
C10
1 nF
L3
1.2 nH
Murata
C9
10 pF
L1
12 nH
C1
10 pF
16
15
14
13
50 Ω μstrip
J1
RF IN
1
2
3
4
12
11
10
9
TL1 = 130 mil (50 Ω)
C17
2.7 pF
JOH
TL1
C5
R2
390 Ω
J2
RF OUT
*2
50 Ω μstrip
C8
10 pF
2.7 pF
JOH
R1
390 Ω
*1
Bias
C2
1 nF
C15
1 nF
5
6
7
8
5117400B
L2
PWR SENSE
10 nH
P1
1
P2
1
C16
1 nF
C3
1 nF
C13
1 nF
P1-1
P1-2
PS REF
PWR SENSE
GND
GND
GND
VCC
2
2
R3
4.3 kΩ
*4
PS REF
3
P2-3
3
Notes:
1. C7 - 130 mils from chip.
2. Pin 2 cut from ground.
3. C11 must be placed as close to chip as possible.
4. The VREG trace is cut and a 4.7 kΩ resistor is
placed on the trace.
P1-4
P1-5
VREG1
VREG2
CON3
4
5
VREG1 VREG2
P3
1
P3-1
VCC
GND
CON5
CON1
P4
1
CON1
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
8 of 12
Rev A13 DS071018
RF5117
Evaluation Board Layout
Board Size 1.5” x 2.0”
Board Thickness 0.031”, Board Material FR-4, Multi-Layer
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A13 DS071018
9 of 12
RF5117
ICQ, ICC, POUT versus VREG (Typical)
IREG, POUT versus VREG (Typical)
VCC = 3.0, PIN = -5.0 dBm
VCC = 3.0, PIN = -5.0 dBm
200.0
180.0
160.0
140.0
120.0
100.0
80.0
25.0
20.0
15.0
10.0
5.0
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25.0
20.0
15.0
10.0
5.0
0.0
0.0
-5.0
-5.0
60.0
-10.0
-15.0
-20.0
-25.0
-10.0
-15.0
-20.0
-25.0
40.0
Icq
Icq
Icc
20.0
Pout
Pout
0.0
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.0
VREG1 , VREG2 (VDC
)
VREG1 , VREG2 (VDC)
*
*
Marker
1
[T1]
22.01 dBm
2.441839744 GHz
802.11B, 5117 proto
RBW 100 kHz
VBW 30 kHz
SWT 35 ms
802.11B, 5117 proto
* RBW 100 kHz
Marker 1 [T1]
* VBW 30 kHz
SWT 35 ms
Ref
30
30 dBm
Offset
Ref
30
30 dBm
Offset
Att
40 dB
2.441839744 GHz
Delta [T1]
-42.31 dB
11.723076923 MHz
Delta [T1]
-58.92 dB
-23.900000000 MHz
18.8 dB
Delta
2
[T1]
-40.55 dB
11.723076923 MHz
Delta [T1]
-56.56 dB
-23.900000000 MHz
18.8 dB
2
1
A
20
10
0
1
IFOVL
RM *
20
3
IFOVL
RM *
AVG
3
1
1
AVG
10
LVL
LVL
PRN
0
-10
-20
-10
-20
-30
PRN
2
2
SWP
20 of
20
SWP
20 of
20
-30
3
3
-40
-50
-40
-50
-60
-70
-60
-70
Center 2.442 GHz
5
MHz/
Span 50 MHz
Center 2.442 GHz
5
MHz/
Span 50 MHz
Comment A:
Date:
8
MHz int LPF's, Vcc=3.0 Vreg= 2.7, 200 mA
Comment A:
Date:
8
MHz int LPF's, Vcc=Vreg= 2.7, 150 mA
26.SEP.2001 01:10:29
26.SEP.2001 01:11:53
Spectral Plot: VCC=3.0V, VREG1=VREG2=2.7V
OUT=22.05dBm, PIN=-4.1dBm, ICC~200mA
Spectral Plot: VCC=2.7V, VREG1=VREG2=2.7V
POUT=19.05dBm, PIN=-6.8dBm, ICC~150mA
P
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
10 of 12
Rev A13 DS071018
RF5117
VREF-VSENSE versus POUT
0.5
0.0
-0.5
-1.0
-1.5
-2.0
-2.5
-15.0
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
POUT
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A13 DS071018
11 of 12
RF5117
EVM versus POUT (11g Tuned PA)
VCC = 3.0V, Gain = 23dB
EVM versus POUT (11g Tuned PA)
VCC = 3.3V, Gain = 23dB
140
120
100
80
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
140.0
120.0
100.0
80.0
60.0
40.0
20.0
0.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
Icc(mA)2.4Vreg
Icc(mA)2.5Vreg
Icc(mA)2.6Vreg
Icc(mA)2.7Vreg
EVM%2.4Vreg
EVM%2.5Vreg
EVM%2.6Vreg
EVM%2.7Vreg
60
Icc(mA)2.4Vreg
40
Icc(mA)2.5Vreg
Icc(mA)2.6Vreg
Icc(mA)2.7Vreg
EVM%2.4Vreg
EVM%2.5Vreg
EVM%2.6Vreg
EVM%2.7Vreg
20
0
14
14.5
15
15.5
16
16.5
17
17.5
18
15.5
16.0
16.5
17.0
17.5
18.0
18.5
19.0
POUT (dBm)
POUT (dBm)
ICC and Gain for 11b Waveform
in 11g Tuned PA
25
24.5
24
250
240
230
220
210
200
190
180
170
160
150
23.5
23
22.5
22
21.5
21
Gain (3V, Po=22.5dBm)
Gain (3.3V, Po=23dBm)
Icc (3V, Po=22.5dBm)
Icc (3.3V, Po=23dBm)
20.5
20
2.2
2.4
2.6
2.8
3
3.2
3.4
VREG (V)
Evaluation Board with 11g Tuning
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support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
12 of 12
Rev A13 DS071018
相关型号：
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