RF5144 [RFMD]
DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE; 双频CDMA的800MHz / 1900MHz的三模功率放大器模块
| 型号： | RF5144 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | DUAL-BAND CDMA 800MHz/1900MHz TRI-MODE POWER AMPLIFIER MODULE |
| 文件： | 总8页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF5144
DUAL-BAND CDMA 800MHz/1900MHz
TRI-MODE POWER AMPLIFIER MODULE
0
RoHS Compliant & Pb-Free Product
Typical Applications
• 3V CDMA/AMPS Cellular Handset
• 3V CDMA US-PCS Handset
• 3V CDMA2000/1XRTT Cellular Handset
• 3V CDMA2000/1XRTT US-PCS Handset
Product Description
-A-
1.00
0.80
4.0
-B-
0.10 C
The RF5144 is a high-power, high-efficiency linear ampli-
fier module specifically designed for 3V handheld sys-
tems. The device is manufactured on an advanced third
generation GaAs HBT process, and was designed for use
as the final RF amplifier in 3V IS-95/CDMA20001X/
AMPS handheld digital cellular equipment, spread-spec-
trum systems, and other applications in the 824MHz to
849MHz band and 1850MHz to 1910MHz band. The
RF5144 has a digital control line for low power applica-
tions to lower quiescent current. The RF5144 is assem-
bled in a 24-pin, 4mmx4mm, QFN package.
4.0
0.10 C
2 PL
B
0.2 C
Shaded area indicates pin 1.
0.10 C A
2 PL
Dimensions in mm.
-C-
0.55
0.35
SEATING
PLANE
0.50 TYP
TYP
Scale: None
0.10 C A B
0.05
TYP
0.00
0.10 C
2.60
2.40
2 PL
0.203
TYP
0.08 C
0.08
0.03
TYP
0.30
0.18
0.10 M C A B
TYP
0.50
0.30
TYP
Optimum Technology Matching® Applied
Package Style: QFN, 24-Pin, 4x4
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
9
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
• Input/Output Internally Matched@50Ω
• 28dBm Output Power
• 41% Peak Linear Efficiency for Cell Band
• -51dBc ACPR @ 885kHz for Cell Band
• -50dBc ACPR@1.25MHz for PCS Band
• 40% Peak Linear Efficiency for PCS Band
24
23
22
21
20
19
VREG - PCS
RF IN - PCS
1
18 NC
Bias
PCS
2
3
4
5
6
17 NC
VREG - CELL
VMODE - CELL
RF IN - CELL
VCC1 - CELL
16 RF OUT - PCS
Bias
Cell
15 NC
Ordering Information
14 RF OUT - CELL
13 NC
RF5144
Dual-Band CDMA 800MHz/1900MHz Tri-Mode
Power Amplifier Module
RF5144PCBA-410Fully Assembled Evaluation Board
7
8
9
10
11
12
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Greensboro, NC 27409, USA
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A0 060214
2-689
RF5144
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
+5.2
V
V
Caution! ESD sensitive device.
Supply Voltage (P
≤31dBm)
OUT
Control Voltage (V
Input RF Power
)
+3.9
V
REG
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
+10
+3.9
dBm
V
Mode Voltage (V
)
MODE
Operating Temperature
Storage Temperature
-30 to +110
-40 to +150
°C
°C
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
o
T=25 C Ambient, V =3.4V, V
=2.8V,
CC
REG
High Power Mode - CDMA
Cell Band (VMODE Low)
V
=0V, and P
=28dBm for all
MODE
OUT
parameters (unless otherwise specified).
Operating Frequency Range
Linear Gain
Maximum Linear Output
Linear Efficiency
824
26.5
28
849
30.5
MHz
dB
dBm
%
28.5
37
41
44
Maximum I
421
455
501
mA
CC
ACPR @ 885kHz
ACPR @ 1.98MHz
Input VSWR
-51
-58
2:1
-46
-55
dBc
dBc
Stability in Band
Stability out of Band
Noise Power
6:1
10:1
No oscillation>-70dBc
No damage
-133
dBm/Hz
At 45MHz offset.
o
T=25 C Ambient, V =3.4V, V
=2.8V,
=16dBm for all
CC
REG
Low Power Mode - CDMA
Cell Band (VMODE High)
V
=2.8V, and P
MODE
OUT
parameters (unless otherwise specified).
Operating Frequency Range
Linear Gain
824
25
849
30
MHz
dB
27
Maximum Linear Output
Linear Efficiency
16
8.1
120
dBm
%
mA
9.0
130
9.8
145
Maximum I
CC
ACPR @885kHz
ACPR @1.98MHz
Input VSWR
-50
-65
2:1
-46
-58
dBc
dBc
Output VSWR Stability
6:1
No oscillation>-70dBc
10:1
No damage
o
T=25 C Ambient, V =3.4V, V
=2.8V,
CC
REG
FM Mode - Cell Band
V
=0V, and P
=30.5dBm for all
MODE
OUT
parameters (unless otherwise specified).
Operating Frequency Range
AMPS Maximum Output Power
AMPS Efficiency
824
30.5
45
849
MHz
dBm
%
31.0
52
28
56
30
AMPS Gain
26
AMPS Second Harmonics
AMPS Third Harmonics
-50
-60
-35
-35
dBc
dBc
2-690
Rev A0 060214
RF5144
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
o
T=25 C Ambient, V =3.4V, V
=2.8V,
CC
REG
High Gain Mode - CDMA
PCS Band (VMODE Low)
V
=0V, and P
=28dBm for all
MODE
OUT
parameters (unless otherwise specified).
Operating Frequency Range
Linear Gain
Second Harmonics
Third Harmonics
Maximum Linear Output
Linear Efficiency
1850
26.0
1910
30.5
-35
MHz
dB
dBc
dBc
dBm
%
28.0
-45
-60
-35
28
37
40
45
Maximum I
412
465
501
mA
CC
ACPR @ 1.25MHz
ACPR @ 1.98MHz
Input VSWR
-50
-54.0
2:1
-46
-51.5
dBc
dBc
Output VSWR Stability
6:1
10:1
No oscillation>-70dBc
No damage
Noise Power
-137
dBm/Hz
At 80MHz offset.
o
T=25 C Ambient, V =3.4V, V
=2.8V,
CC
REG
Low Gain Mode - CDMA
PCS Band (VMODE High)
V
=2.8V, and P
=16dBm for all
MODE
OUT
parameters (unless otherwise specified).
Operating Frequency Range
Linear Gain
Maximum Linear Output
ACPR @ 1.25MHz
ACPR @ 1.98MHz
Linear Efficiency
1850
25.0
16
1910
29.5
MHz
dB
dBm
dBc
dBc
%
27.0
-55
-63
9.0
130
-48
-56
10.6
150
7.8
110
Maximum I
mA
CC
Input VSWR
2:1
Output VSWR Stability
6:1
10:1
No oscillation>-70dBc
No damage
Power Supply
Supply Voltage
High Gain Idle Current - Cell
3.2
45
3.4
60
4.2
75
V
mA
V
V
V
V
V
V
=2.8V
=2.8V
=2.8V
REG_CELL
REG_CELL
REG_CELL
Low Gain Idle Current - Cell
34
1.5
45
45
2.5
75
64
3.0
95
mA
mA
mA
mA
mA
uA
V
Current - Cell
REG
High Gain Idle Current - PCS
Low Gain Idle Current - PCS
=2.8V
=2.8V
=2.8V
REG_PCS
REG_PCS
REG_PCS
40
65
85
V
V
V
Current - PCS
1.5
2.0
200
150
3.0
250
250
REG
Current - Cell
Current - PCS
MODE
MODE
uA
RF Turn On/Off Time
DC Turn On/Off Time
Total Current (Power Down)
1.2
2
0.2
6
uS
uS
uA
V
40
2.0
0.5
V
Low Voltage (Power Down)
0
REG
V
High Voltage
2.75
2.8
2.95
V
REG
(Recommended)
V
V
V
High Voltage (Operational)
2.7
0
3.0
0.5
3.0
V
V
V
REG
Voltage
Voltage
High Gain Mode
Low Gain Mode
MODE
MODE
2.0
Rev A0 060214
2-691
RF5144
Pin
Function Description
Interface Schematic
Regulated voltage supply for PCS band amplifier bias circuit. In power
1
2
3
4
VREG_PCS
RFIN_PCS
VREG_Cell
down mode, both V
and V
need to be LOW (<0.5V).
REG_PCS
MODE_PCS
PCS band RF input internally matched to 50Ω. This input is internally
AC-coupled.
Regulated voltage supply for Cell band amplifier bias circuit. In power
down mode, both V
and V
need to be LOW (<0.5V).
REG_Cell
MODE_Cell
Cell band mode control pin. For nominal operation (High Power mode),
is set LOW. When set HIGH, devices are biased lower to
VMODE_
Cell
V
MODE_Cell
improve efficiency.
Cell band RF input internally matched to 50Ω. This input is internally
5
6
RFIN_Cell
VCC1_Cell
AC-coupled.
Cell band first stage collector supply. A 2200uF and a 4.7μF decou-
pling capacitors are required.
No connection. Do not connect this pin to any external circuit.
No connection. Do not connect this pin to any external circuit.
7
8
9
NC
NC
VCC2_Cell
Cell band output stage collector supply. Please see the schematic for
required external components.
Same as Pin 9.
10
11
12
13
14
15
16
VCC2_Cell
VCC2_Cell
NC
Same as Pin 9.
No connection. Do not connect this pin to any external circuit.
No connection. Do not connect this pin to any external circuit.
Cell band RF output. Internally AC-coupled.
No connection. Do not connect this pin to any external circuit.
PCS band RF output. Internally AC-coupled.
NC
RFOUT_Cell
NC
RFOUT_
PCS
No connection. Do not connect this pin to any external circuit.
No connection. Do not connect this pin to any external circuit.
17
18
19
NC
NC
VCC2_PCS
PCS band output stage collector supply. Please see the schematic for
required external components.
Same as Pin 19.
Same as Pin 19.
20
21
22
VCC2_PCS
VCC2_PCS
VCC1_PCS
PCS band first stage collector supply. A 4.7μF decoupling capacitor is
required.
Bias circuit supply voltage.
23
24
VCC BIAS
VMODE_
PCS
PCS band mode control pin. For nominal operation (High Power mode),
VMODE_PCS is set Low. When set HIGH, devices are biased lower to
improve efficiency.
The backside of the package should be soldered to a top side ground
pad which is connected to the ground plane with multiple vias. The pad
should have a short thermal path to the ground plane.
Pkg
Base
GND
2-692
Rev A0 060214
RF5144
Evaluation Board Schematic - CDMA
VCC BIAS
VCC1_PCS
VMODE_PCS
VREG_PCS
C6
4.7 μF
C
4.7 μF
C6
4.7 μF
C16
2200 pF
C10
2200 pF
VCC2_PCS
C1
22 μF
C2
4.7 μF
C13
2200 pF
C9
1000 pF
24
23
22
21
20
19
1
2
3
4
5
6
18
17
16
15
14
13
50 Ω μstrip
Bias
PCS
RF IN - PCS
VREG_Cell
50 Ω μstrip
50 Ω μstrip
RF OUT_PCS
RF OUT_Cell
C7
C14
Bias
Cell
4.7 μF
2200 pF
C4
4.7 μF
7
8
9
10
11
12
VMODE_Cell
RF IN_Cell
C11
2200 pF
L2*
VCC2_Cell
C12
2200 pF
C5
22 μF
50 Ω μstrip
C8
4.7 μF
VCC1_Cell
*The current rating for component L2 needs to be 1A. On the evaluation board, the parasitic
inductance of a 0603 0 Ω resistor (Panasonic part #ERJ-3GEY0R00) is used to realize the required
inductance. An inductor with value between 1 nH and 1.5 nH can also be used for L2. Different
inductance will give slight tradeoff between ACPR and efficiency. The 0 Ω resistor is chosen on the
evaluation board for the reason of low BOM cost.
Rev A0 060214
2-693
RF5144
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is
3μinch to 8μinch gold over 180μinch nickel.
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and
tested for optimized assembly at RFMD; however, it may require some modifications to address company specific
assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances.
PCB Metal Land Pattern
A = 0.64 x 0.28 Typ.
B = 0.28 x 0.64 Typ.
C = 2.50 Sq.
D = 1.28 x 0.64 Typ.
Dimensions in mm.
2.00
1.00
0.50
Pin 24
B
B
B
D
Pin 1
Pin 18
A
A
A
A
A
A
A
A
A
A
A
A
0.50 Typ.
1.25
2.50
Typ.
C
0.55 Typ.
B
B
D
B
Pin 12
0.55 Typ.
1.80 Typ.
2.05
3.05
Figure 1. PCB Metal Land Pattern (Top View)
2-694
Rev A0 060214
RF5144
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the
PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all
pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask
clearance can be provided in the master data or requested from the PCB fabrication supplier.
A = 0.74 x 0.38 (mm) Typ.
B = 0.38 x 0.74 (mm) Typ.
C = 2.60 (mm) Sq.
2.50 Typ.
0.50 Typ.
Dimensions in mm.
Pin 24
B
B
B
B
B
B
Pin 1
Pin 18
A
A
A
A
A
A
A
A
A
A
A
A
0.50 Typ.
1.25
2.50 Typ.
C
0.55 Typ.
B
B
B
B
B
B
Pin 12
0.55 Typ.
1.25
Figure 2. PCB Solder Mask (Top View)
Rev A0 060214
2-695
RF5144
2-696
Rev A0 060214
相关型号：
©2020 ICPDF网 联系我们和版权申明