RF5163 [RFMD]
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER; 3V- 5V ， 2.5GHZ线性功率放大器
| 型号： | RF5163 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER |
| 文件： | 总12页 (文件大小：510K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF5163
3V-5V, 2.5GHZ LINEAR POWER AMPLIFIER
0
RoHS Compliant & Pb-Free Product
Typical Applications
• 802.11b/g/n Access Points
• PCS Communication Systems
• 2.4GHz ISM Band Applications
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
• Broadband Spread-Spectrum Systems
Product Description
2 PLCS
0.05 C
0.10 C
A
-A-
The RF5163 is a linear, medium-power, high-efficiency
amplifier IC designed specifically for low voltage opera-
tion. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as the final RF
amplifier in 802.11b/g/n access point transmitters. The
device is provided in a 4mmx4mm, 16-pin, leadless chip
carrier with a backside ground. The RF5163 is designed
to maintain linearity over a wide range of supply voltage
and power output.
0.90
0.85
4.00 SQ.
0.70
0.65
2.00 TYP
0.05
0.00
0.10 C
B
2 PLCS
12°
MAX
0.10 C B
2 PLCS
-B-
-C-
SEATING
PLANE
1.87 TYP
3.75 SQ
Shaded lead is pin 1.
0.10 C
2 PLCS
A
Dimensions in mm.
0.10M C A
B
0.60
0.24
TYP
0.35
0.23
Pin 1 ID
0.20 R
2.25
SQ.
1.95
0.75
0.50
TYP
0.65
Optimum Technology Matching® Applied
Package Style: QFN, 16-Pin, 4x4
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
9
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
• Single 3.3V or 5V Power Supply
• +33dBm Saturated Output Power (typ.)
• 20dB Large Signal Gain (typ.)
16
15
14
13
• 2.0% EVM @ +26dBm, 54Mbps (typ.)
• Separate Power Detect/Power Down Pins
• 1800MHz to 2500MHz Frequency Range
RF IN
1
2
3
4
12 RF OUT
11 RF OUT
10 RF OUT
VREG1GND
P DOWN
Bias
Ordering Information
P DETECT
9 GND
RF5163
3V-5V, 2.5GHz Linear Power Amplifier, Matte-Sn
(Pb-free) Finish
5
6
7
8
RF5163L
3V-5V, 2.5GHz Linear Power Amplifier, Sn-Pb Finish
RF5163PCBA-41XFully Assembled Evaluation Board
RF5163PCBA-WDFully Assembled Evaluation Board, With Driver
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A12 061114
2-627
RF5163
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to +5.5
-0.5 to 3.3
Unit
V
DC
Power Control Voltage (V
)
V
PC
Caution! ESD sensitive device.
DC Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
1000
+15
-10 to +85
-40 to +150
JEDEC Level 3
mA
dBm
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
°C
Moisture sensitivity
Specification
Parameter
Overall
Unit
Condition
Min.
Typ.
Max.
T=25 °C, V =5.0V, V
=3V,
CC
REG1,2
Freq=2450MHz
Frequency Range
Compliance
Output Power
2400 to 2500
+26
MHz
dBm
IEEE802.11g and IEEE802.11b
With 802.11g modulation (54 Mbit/s) and
meeting 802.11g spectral mask @ <2.5%
maximum EVM (RMS, mean).
EVM
2.0
20
%
Increase over EVM floor; RF P
=+26dBm
OUT
Gain
dB
@ +6dBm RF Pin
Input Impedance
Output VSWR
Power Down
Ω
Please see Theory of Operation.
No oscillation
10:1
V
and V
are “ON”
0.6
5.0
V
V
Pin 3 (P_DOWN) Voltage<0.6V
Pin 3 (P_DOWN) Voltage>2.5V
CC
CC1
DC
DC
DC
DC
V
and V
are “OFF”
4.0
CC
CC1
Power Supply
Operating Voltage
Current Consumption
3.0 to 5.0
520
V
mA
Power Down “ON”, P
Idle current
=+26dBm
OUT
260
3.0
mA
V
V
V
(Bias) Voltage (V
,
REG1
REG
V
)
REG2
(Bias) Current (Total)
5
mA
REG
2-628
Rev A12 061114
RF5163
Pin
1
Function Description
Interface Schematic
See pin 14.
RF input. Matching network with DC-block required; see evaluation
RF IN
board schematic for details.
First stage bias circuit ground. Keep PCB traces short and connect
immediately to ground plane.
2
3
VREG1
GND
P DOWN
Power down pin. Apply <0.6V to power up both V and V . Apply
CC1
DC
CC
2.5V to 3.5V to power down. If function is not desired pin may be
DC
DC
grounded.
The P_DOWN and P_DETECT pins can be used in conjunction with an
external feedback path to provide an RF power control function for the
RF5163. The power control function is based on sampling the RF drive
to the final stage of the RF5163. If function is not desired, pin may be
left unterminated.
4
P DETECT
First stage bias input - requires regulated voltage to maintain desired
5
6
7
VREG1
VREG2
I
.
CC
Second stage bias input - requires regulated voltage to maintain
desired I . May be tied to pin 5 input after series resistors.
CC
Second stage bias circuit ground. Ground with a 10nH inductor.
VREG2
GND
NC
No connect (N/C).
8
9
Ground connection. For best performance, keep PCB trace lengths
short.
GND
Same as pin 11.
10
11
RF OUT
RF OUT
RF output and bias for the output stage. The power supply for the out-
put transistor needs to be supplied to this pin. This can be done
through a quarter-wave (λ/4) microstrip line that is RF grounded at the
other end, or through an RF inductor that supports the required DC cur-
rent.
RF OUT
Same as pin 11.
Same as pin 8.
12
13
14
RF OUT
GND
VCC1
Power supply pin for first stage. External low frequency bypass capaci-
tors should be connected if no other low frequency decoupling is
employed.
VCC
RF IN
BIAS
Same as pin 14.
15
16
VCC1
VCC
Power supply pin for bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
employed.
Ground connection. The back side of the package should be connected See pins 1 and 2.
to the ground plane through as short a connection as possible, e.g.,
PCB vias under the device are recommended.
Pkg
Base
GND
Rev A12 061114
2-629
RF5163
Theory of Operation and Application Information
RF5163PCBA Evaluation Board
The RF5163 is a two-stage device with a nominal gain of 20dB in the 2.4GHz to 2.5GHz Industrial, Scientific, and Medi-
cal (ISM) band. The RF5163 is designed primarily for fixed IEEE802.11g/n WLAN applications requiring exceptionally
linear RF output powers of +23dBm to +28dBm.
The RF5163 requires a single positive supply of 5.0V nominal to operate to full specifications. Power control is provided
through two (2) separate and independent methods. The first method is through two (2) bias control pins (VREG1 and
VREG2). In most applications, both VREG1 and VREG2 are tied together and used as a single control input. The second
method is through the use of a dedicated Power Down (P_Down) pin. Applying less than (<) 0.6VDC to the RF5163
P_Down pin fully turns “ON” both VCC and VCC1 power circuits. Applying 2.5VDC to 3.5VDC to the RF5163 P_Down pin
fully turns “OFF” both VCC and VCC1 circuits. Turning the RF5163 “ON” and/or “OFF” by using the P_Down pin is accom-
plished without regard to system voltage regulator turn-on and turn-off settling time restraints.
There is some external matching on the input and output of the RF5163, thus allowing the RF5163 to be used in other
applications outside the 2.4GHz to 2.5GHz ISM band (such as IEEE802.16d/e in the 2.3GHz band). Both the input and
output of the device require a series DC-blocking capacitor. In some cases, a capacitor used as a matching component
can also serve as the blocking cap. The circuits used on the RF5163PCBA and RF5163PCBA-WD Evaluation Boards
are optimized for VCC=+5.0VDC operation.
The RF5163 is not difficult to implement, however, care in printed circuit board layout and component selection is highly
recommended when implementing 2.5GHz capable circuits. Critical passive components in the RF5163PCBA Evalua-
tion Board circuit are interstage and output matching components (C13, C15, and C16). In these cases, high-Q (Quality
factor) capacitors suitable for RF application are used on the evaluation board (an evaluation board bill of material (BOM)
is available upon request). High-Q components are not required in every design, but it is strongly recommended that the
initial design be implemented with the same components used on the RF5163PCBA Evaluation Board. After establishing
initial baseline performance, less costly components may be substituted to evaluate performance impact.
The input matching inductor L1 and the DC blocking capacitor C14 helps to tune the peak of the small-signal gain
response as well as improve the linearity of the PA. The input impedance of the PA will not be 50Ω with this input match
so do not use a Smith Chart for guidance for value selection and parts placement. With a 50Ω input into the input match
as shown on the Evaluation Board schematic, the PA will perform as expected with an expected input return loss of
~-2dB. The input L1 should be placed with reference to the position as shown on the RF5163PCBA Evaluation Board
schematic.
The interstage matching capacitor, C13, along with the combined inductance of the internal bond wire, the short length
of circuit board trace, and the parasitic inductance of the capacitor, tunes the peak of the small-signal gain response. The
trace length between C13 and RF5163 pins 14 and 15 should be kept as close to the evaluation board schematic as pos-
sible.
The output matching capacitors are C15 and C16. These capacitors are placed with reference to position along trans-
mission line segments TL1 and TL2, as shown on the RF5163PCBA Evaluation Board schematic. These segments
should be duplicated as closely as possible. Due to variations in FR-4 characteristics and PCB manufacturer process
variations, some benefit is obtained from small adjustments to TL1 and TL2 length when the evaluation board is dupli-
cated. Prior to full scale manufacturing, the board layout of early prototypes should include some additional exposed
ground areas around C15 and C16 to optimize this part of the circuit. The AC coupling capacitor, C10, may be placed
very close to C15. The output match is complete at C15.
R3 at RF5163 pin 4 (P_Detect) desensitizes the P_Detect line from the value of C12. Without R3, the value of C12 may
affect error vector magnitude (EVM) under certain operational conditions.
2-630
Rev A12 061114
RF5163
The RF5163 has primarily been characterized with a voltage on VREG1 and VREG2 of +3.0VDC. However, the RF5163 will
operate from a wide range of control voltages. If a different control voltage is desired, contact RFMD Sales or Applica-
tions Engineering for additional data and guidance.
RF5163PCBA-WD Evaluation Board:
The RF5163PCBA-WD Evaluation Board was developed to assist prospective customers of the RF5163 with a com-
pletely characterized medium to high power amplifier solution incorporating a highly linear driver amplifier stage. In appli-
cations requiring more than 20dB to 22dB amplifier stage gain, the RF5163PCBA-WD Evaluation Board design may be
employed to achieve higher gain combined with ultra linear RF power output for high peak-to-average power ratio appli-
cations (e.g., orthogonal frequency division multiplex (OFDM) modulation).
Figure 1 below shows the major component line-up for an ultra linear fixed application (e.g., an access point (AP)) trans-
mitter capable of producing +26dBm RF POUT with an amplifier stage (driver + final stage power amplifier IC, RF2373 +
RF5163) EVM contribution of < 2.5% EVM, RMS (mean).
Maximum Total Transmit EVM (RMS, Mean) @ 54Mbps:
RF Pout = +26dBm with Transmit 'Chain' EVM < 3.8%
Antenna
RFMD RF2959
OFDM
WLAN "g"
Transciever IC
(IEEE802.11g/n)
MAC + BBP IC
RFMD RF5163
RFMD RF2373
Driver Amplifier
G=15dB
RF In = -9dBm; RF Out = +6dBm
EVM < 1%
PA IC
G=20dB
RF In = +6dBm;RF Out=+26dBm
EVM < 2.0%
Vcc = 3 Vdc
RF Out = -9dBm
@54Mbps
EVM < 3%
Vcc=+5Vdc
Vcc = +5 Vdc
Ethernet
Processor
PA Stage EVM Contribution
<2.5% @ +26dBm RF Pout
Figure 1. IEEE802.11g/n AP Transmitter Major Component Line-Up
Rev A12 061114
2-631
RF5163
The RF5163PCBA-WD Evaluation Board employs the RF2373 as a driver amplifier at the input to the RF5163 (as final
stage power amplifier IC). The RF2373 is a very high linearity single stage low noise amplifier (LNA)/driver amplifier that
demonstrates approximately 15dB of gain from 2400MHz to 2500MHz and is capable of delivering +6dBm RF POUT at <
1% EVM (RMS, mean). The RF5163PCBA-WD Evaluation Board is designed to maximize both useful gain and ultra lin-
ear transmit power performance. Typical RF5163PCBA-WD Evaluation Board specifications are shown in the Table
below:
Typical RF5163PCBA-WD Evaluation Board Specifications:
Parameter
Min.
Typ.
Max.
Unit
Condition
Frequency Range
2400
2500
MHz
T=25°C, V =+5.0V ; All V
voltages=+3.0V
CC
DC
REG DC
Output Power
EVM
Gain
+26
33
dBm
%
dB
2.5
40
RMS, mean (IEEE802.11g/n; Maximum Data Rate)
-10dBm RF Pin
Power Supply
Operating Voltage
(V
)
5.0
3.0
V
V
CC
DC
DC
Bias Voltage (V
)
REG
Current Consumption
660
mA
RF P
=+26dBm; RF PIN=-10dBm; P_Down is “ON”,
OUT
IEEE802.11g/n Modulation @ Maximum Data Rate
All application information described above for the RF5163PCBA Evaluation Board applies directly to the RF5163PCBA-
WD Evaluation Board.
On the RF5163PCBA-WD Evaluation Board schematic, reference designator U1 identifies the RF2373 and reference
designator U2 identifies the RF5163. VCC (nominal+5.0VDC) is supplied to both U1 (RF2373) and U2 (RF5163) simulta-
neously through P2, two-pin header connector. VCC is applied to the RF2373 through RF2373 pin 4 (RF OUT). Inductor
L4 is positioned to isolate the power supply line from C7 (RF2373 output tuning capacitor).
R3 on RF2373 pin 3 sets the bias current for RF2373 VBIAS voltage. As employed within the RF5163PCBA-WD Evalua-
tion Board, the RF2373 is biased for VBIAS voltage of +3.0VDC. RF2373 bias voltage is supplied through P3, two-pin
header connector.
Critical RF5163 input and output tuning components are L2, C11, C13, C16, and C17. The resistor values for R7 and R8
have changed from the original values in the RF5163 evaluation board schematic. Critical RF2373 input and output tun-
ing components are C6, C7 and L4. In these cases, high-Q capacitors suitable for RF applications are used on the
RF5163PCBA-WD Evaluation Board (bill of material (BOM) is available upon request). 50Ω transmission line segments
are employed at both the input and output of the RF2373. It is strongly recommended that the construction of these
transmission line segments be followed as closely as possible to yield best gain, gain flatness, and linear amplifier driver
performance.
The RF5163PCBA-WD Evaluation Board includes two (2) locations where separate and independent 3dB loss pads may
be populated. These two (2) 3dB loss pads are provided to reduce the overall gain of the RF2373+RF5163 amplifier
combination (which can achieve 40dB gain if not reduced through the use of the available 3dB loss pads). If no gain
reduction is desired simply place resistors R11 and R2 as zero (0) resistor values. If only a single 3dB loss pad is desired
for circuit operation it is recommended to use the R9, R10, R11 3dB loss pad positioned in series with and before
RF2373 pin 1 (RF IN). Place resistor R2 as a zero (0) value resistor.
The RF5163PCBA-WD Evaluation Board has been characterized with a VCC voltage of +5.0VDC, RF5163 VREG1 and
V
REG2 voltage of +3.0VDC, and RF2373 bias (VBIAS or VPD) voltage of +3.0VDC. These are ideal operating conditions to
achieve the best combination of gain and ultra linear transmitter performance at an RF POUT=+26dBm. However, the
RF5163PCBA-WD Evaluation Board will operate from a wide range of VCC and control voltages. If a different set of VCC
and/or control voltages is desired, contact RFMD Sales or Applications Engineering for additional data and guidance.
2-632
Rev A12 061114
RF5163
Evaluation Board Schematic
RF5163PCBA Evaluation Board (2400MHz to 2500MHz)
VCC
TL3=15 mils
from the IC
C3
1 nF
C13
6.8 pF
TL3
C2
1 μF
L2
6.8 nH
Coilcraft
16
15
14
13
L1
1.5 nH
C14
1.5 pF
TL1=50 mil (50 Ω)
J1
RF IN
1
2
3
4
12
11
10
9
C10
10 pF
50 Ω μstrip
50 Ω μstrip
TL1
TL2
J2
RF OUT
C16
3.3 pF
C15
0.7 pF
P_DOWN
Bias
P_DETECT
R3
750 Ω
TL2=265 mil (50 Ω)
C12
330 pF
5
6
7
8
5163400, r. A
C4
1 nF
C5
1 nF
P3
1
P1
1
P3-1
VPD
GND
GND
VCC
L3
10 nH
R1
300 Ω
R2
200 Ω
P1-2
C20
4.7 μF
2
VREG
P2
1
P4
1
P2-1
C7
4.7 μF
VREG
2
3
4
P2-2
PDETECT
GND
P2-4
P_DOWN
Rev A12 061114
2-633
RF5163
Evaluation Board Schematic
RF5163PCBA-WD Evaluation Board (2400MHz to 2500MHz)
VCC
VCC
P1*
1
GND
VCC
P4
1
C1
4.7 uF
P1-2
2
GND
P2
1
FB1
TBD
P2-1
VCC
Test Coupon
P5
1
2
GND P5-1
VCC
50 Ω μStrip
XX mil
HDR_1X2
C3
1 nF
J3
J4
C11 should be
placed 15 mils
from the PA
C13*
7.5 pF
VCC
TL3=C13 should be placed
10 mil (50 Ω) from the PA
C2
4.7 uF
R1
0 Ω
U1
50 Ω μstrip
C6
220 pF
C12
1 uF
R11
18 Ω
C11*
2.2 nF
L2 should be
placed 78 mils
(50 Ω) from
the PA
50 Ω μstrip
50 Ω μstrip
J1
RF IN
GND2
VPD
GND
1
2
3
5
4
RF IN
R9
300 Ω
R10
300 Ω
C4
1 nF
C5
10 nF
TL1=C16 should
be placed at 30 mil
(50 Ω) from the PA
TL2=C17 should be
placed at 214 mil
(50 Ω) from the PA
U2
L1
16
15
14
13
L4
4.7 nH
L2*
1.5 nH
C7
2.0 pF
C14
1.5 pF
6.8 nH
Coilcraft
0603
R2
18 Ω
RF OUT
1
2
3
4
12
C15
50 Ω μstrip
10 pF
R3
560 Ω
C8
NPP
R4
300 Ω
R5
300 Ω
50 Ω μstrip
50 Ω μstrip
50 Ω μstrip
J2
TL1=45 mil (50 Ω)
from chip
11
10
9
RF OUT
VPD
C16*
3.9 pF
C17*
1 pF
C9
C10
220 pF
R6
750 Ω
1 nF
Bias
P_DOWN
C18
330 pF
P_DETECT
5
6
7
8
Notes:
L3
10 nH
C20
1 nF
C19
1 nF
P3
1
1. Parts with * should be populated as closely as possible to the instructions for each part.
P3-1
VPD
GND
2. The following parts should be placed as follows:
• For 3 dB pad before the driver, populate R9, R10 and R11. If the 3 dB pad is not needed,
populate R11 with a 0 Ω resistor.
R7
100 Ω
R8
150 Ω
P6
1
2
P6-1
VREG
2373+5163410, r2
• For 3 dB pad in between the driver and PA, populate R2, R4 and R5. If the 3 dB pad is not needed,
HDR_1X2
populate R2 with a 0 Ω resistor.
P6-2
2
3
4
P_DETECT
GND
C21
4.7 uF
P6-4
P_DOWN
VREG
2-634
Rev A12 061114
RF5163
Evaluation Board Layout
RF5163PCBA Evaluation Board (2400MHz to 2500MHz)
Board Size 2.0” x 2.0”
Board Thickness 0.031”, Board Material FR-4, Multi-Layer
Rev A12 061114
2-635
RF5163
Evaluation Board Layout
RF5163PCBA-WD Evaluation Board (2400MHz to 2500MHz)
Board Size 2.0” x 2.0”
Board Thickness 0.031”, Board Material FR-4, Multi-Layer
2-636
Rev A12 061114
RF5163
Rev A12 061114
2-637
RF5163
EVM (%) versus Frequency (GHz)
Gain and RF POUT versus Frequency (MHz),
VCC=+5VDC, VREG1=VREG2=+3VDC, T=+25°C 54Mbps, IEEE802.11g
26.5
26.0
25.5
25.0
24.5
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
18.5
2.40
2.20
2.00
1.80
1.60
1.40
1.20
G(dB) vs. F(MHz)
RF Pout (dBm) vs. F(MHz)
2.35
2.40
2.45
2.50
2.55
2380.0
2400.0
2420.0
2440.0
2460.0
2480.0
2500.0
2520.0
Frequency (GHz)
Frequency (MHz)
ICC (A) (Total) versus Frequency (GHz)
P_Detect versus P_Out,
VCC=+5.0VDC
0.55
0.54
0.53
0.52
0.51
0.50
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Vreg:3.3
Vreg:3.0
2.35
2.40
2.45
2.50
2.55
0.0
5.0
10.0
15.0
20.0
25.0
30.0
Frequency (GHz)
P_Out (dBm)
RF POUT versus EVM and ICC (Total)
5.0
4.0
3.0
2.0
1.0
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
EVM (%)
ICC_Total(mA)
0.0
21.0
22.0
23.0
24.0
25.0
26.0
27.0
28.0
29.0
POUT (dBm)
2-638
Rev A12 061114
相关型号：
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