RF2361_06 [RFMD]
3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER; 3V低噪声放大器/ 3V PA驱动放大器
| 型号： | RF2361_06 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER |
| 文件： | 总12页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF2361
3V LOW NOISE AMPLIFIER/
3V PA DRIVER AMPLIFIER
0
Typical Applications
• TDMA/CDMA/FM Cellular PCS LNA
• Low Noise Transmit Driver Amplifier
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
1.60
+ 0.01
0.15
0.05
The RF2361 is a low noise amplifier with a very high
dynamic range designed for digital cellular applications.
The device functions as an outstanding front end low
noise amplifier or power amplifier driver amplifier in the
transmit chain of digital subscriber units where low trans-
mit noise power is a concern. When used as an LNA, the
bias current can be set externally. When used as a PA
driver, the IC can operate directly from a single cell Li-ion
battery and includes a power down feature that can be
used to completely turn off the device. The IC is featured
in a standard SOT 5-lead plastic package.
0.400
1
2.90
+ 0.10
0.950
2.80
1.44
1.04
+ 0.20
3° MAX
0° MIN
Dimensions in mm.
0.127
NOTE: The RF2361 is a non-Pb-free product. If a Pb-free
product with the same functionality and package is
desired, please see the RF2878.
0.45
+ 0.10
Optimum Technology Matching® Applied
Package Style: SOT 5-Lead
Si BJT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
9
Si Bi-CMOS
InGaP/HBT
Si CMOS
Features
SiGe Bi-CMOS
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
• Single 2.5V to 6.0V Power Supply
• 150MHz to 2500MHz Operation
• Extremely Small SOT 5-Lead Package
RF IN 1
GND1 2
VPD 3
5
4
GND2
Ordering Information
RF OUT
RF2361
3V Low Noise Amplifier/ 3V PA Driver Amplifier
RF2361 PCBA-D Fully Assembled Evaluation Board (Driver)
RF2361 PCBA-L Fully Assembled Evaluation Board (LNA)
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A9 050117
4-331
RF2361
Absolute Maximum Ratings
Parameter
Rating
-0.5 to +8.0
Unit
Caution! ESD sensitive device.
Supply Voltage, V
V
CC
DC
Power Down Voltage, V
Input RF Level
Operating Ambient Temperature
Storage Temperature
<V
CC
V
PD
DC
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
+10
-40 to +85
-40 to +150
dBm
°C
°C
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Overall
RF Frequency Range
150 to 2500
MHz
Schematic per LNA Application;
Low Noise Amplifier
881MHz Performance
T=25°C, RF=881MHz, V =2.8V,
PD
R1=1kΩ
Gain
19.5
19.5
20
20
dB
dB
V
V
V
V
V
V
=3.0V, I =7.6mA
CC
CC
CC
CC
CC
CC
CC
=2.7V, I =7.5mA
CC
Noise Figure
Input IP3
1.4
1.6
1.6
dB
=3.0V, I =7.6mA
CC
1.4
dB
=2.7V, I =7.5mA
CC
+6.0
+5.5
dBm
dBm
=3.0V, I =7.6mA
CC
=2.7V, I =7.5mA
CC
Schematic per LNA Application;
Low Noise Amplifier
1950MHz Performance
T=25°C, RF=1950MHz, V =2.8V,
PD
R1=1kΩ
Gain
12.5
12.5
13
13
dB
dB
V
V
V
V
V
V
=3.0V, I =6.4mA
CC
CC
CC
CC
CC
CC
CC
=2.7V, I =6.3mA
CC
Noise Figure
Input IP3
1.3
1.5
1.5
dB
=3.0V, I =6.4mA
CC
1.3
dB
=2.7V, I =6.3mA
CC
+16.5
+16.0
dBm
dBm
=3.0V, I =6.4mA
CC
=2.7V, I =6.3mA
CC
Schematic per Driver Amplifier Application;
T=25°C, RF=836MHz, V =2.8V
Driver Amplifier
836MHz Performance
Gain
PD
19.5
19.5
19.5
25
20.5
20.5
20.5
+32.0
+29.0
+27.8
1.9
21.5
21.5
21.5
35
dB
dB
V
V
V
V
V
V
V
V
V
V
V
V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
dB
Output IP3
dBm
dBm
dBm
dB
Noise Figure
Reverse Isolation
2.0
2.0
2.0
1.85
1.8
dB
dB
25
dB
25
dB
25
dB
Input VSWR
Output VSWR
1.8:1
1.25:1
2.0:1
2.0:1
Using External LC network used on evalua-
tion board.
P
13
12
14.4
12.5
11.5
dBm
dBm
dBm
V
V
V
=3.5V
=3.0V
=2.7V
1dB
CC
CC
CC
10.5
4-332
Rev A9 050117
RF2361
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T = 25 °C
Power Supply
Voltage (V
)
2.5 to 6.0
2.8
V
V
CC
Voltage (V
)
2.7
2.9
27
PD
Current Consumption -
Driver Amplifier
12.5
21.5
mA
V
=3.5V; V =2.8V; V +V
- Current
CC
CC
PD
PD
Consumption from V is 2.0mA Typ. @
PD
V
V
V
V
=2.8V and 3.0mA Max @ V =2.9V
PD
PD
CC
CC
CC
18
19
20
23
22
29
10
mA
mA
μA
=3.5V; V =2.7V; V + V
PD PD
CC
CC
=3.5V; V =2.9V; V + V
PD
PD
Power Down
=3.5V; V ≤ 0.9 V
PD
Schematic per Driver Amplifier Application;
T=25°C, RF=1880MHz, V =2.8V
Driver Amplifier
1880MHz Performance
Gain
PD
13.0
13.0
13.0
27
14.0
14.0
14.0
+35.0
+31.0
+28.8
1.85
1.8
14.5
14.5
14.5
38
dB
dB
V
V
V
V
V
V
V
V
V
V
V
V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
dB
Output IP3
dBm
dBm
dBm
dB
Noise Figure
Reverse Isolation
2.0
2.0
2.0
dB
1.75
19
dB
dB
19
dB
19
dB
Input VSWR
Output VSWR
1.6:1
1.6:1
2.0:1
2.0:1
Using External LC network used on evalua-
tion board.
P
14
13
12
15.6
14.1
13.1
dBm
dBm
dBm
V
V
V
=3.5V
=3.0V
=2.7V
1dB
CC
CC
CC
T = 25 °C
Power Supply
Voltage (V
)
2.5 to 6.0
2.8
V
V
CC
Voltage (V
)
2.7
2.9
PD
Current Consumption -
Driver Amplifier
11.5
19.5
25.5
mA
V
=3.5V; V =2.8V; V +V
- Current
CC
CC
PD
PD
Consumption from V is 2.0mA Typ.@
PD
V
V
V
V
=2.8V and 3.0mA Max @ V =2.9V
PD
PD
CC
CC
CC
16
18
18
20
27
10
mA
mA
μA
=3.5V; V =2.7V; V + V
PD PD
CC
CC
20.5
=3.5V; V =2.9V; V + V
PD PD
Power Down
=3.5V; V ≤ 0.9 V
PD
Rev A9 050117
4-333
RF2361
Pin
Function Description
Interface Schematic
RF input pin. This pin is DC coupled and matched to 50Ω at 836MHz.
1
RF IN
To Bias
Circuit
RF OUT
RF IN
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
2
3
GND1
VPD
For low noise amplifier applications, this pin is used to control the bias
current. See plots for bias current settings. An external resistor (R1)
PD
can be used to set the bias current for any V voltage.
PD
For driver amplifier applications, this is the Power Down pin for the IC.
V
=2.8V +/- 0.1V is required for proper operation. V < 0.9V turns
PD
PD
off the Part. External RF bypassing is required. The trace length
between the pin and the bypass capacitors should be minimized. The
ground side of the bypass capacitors should connect immediately to
ground plane. Nominal current required for V =2.8V is 2.0mA typical
PD
and 3.0mA Max (@ V =2.9V).
PD
Amplifier Output pin. This pin is an open-collector output. It must be
4
5
RF OUT
GND2
biased to either V or pin 4 through a choke or matching inductor.
CC
This pin is typically matched to 50Ω with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
4-334
Rev A9 050117
RF2361
Application Schematic:
Low Noise Amplifier ~881MHz Operation
22 nF
J1
RF IN
1
2
3
5
2 pF
1k
Ω
J2
RF OUT
VPD
4
10 nF
100 pF
12 nH
VCC
100 pF 10 nF
Application Schematic:
Low Noise Amplifier ~1950MHz Operation
22 nF
J1
RF IN
1
2
3
5
1 pF
1k
Ω
J2
RF OUT
VPD
4
10 nF
100 pF
3.3 nH
VCC
100 pF 10 nF
Rev A9 050117
4-335
RF2361
Application Schematic:
Driver Amplifier ~836MHz Operation
22 nF
J1
RF IN
1
2
3
5
2 pF
0
Ω
J2
RF OUT
VPD
4
10 nF
100 pF
12 nH
VCC
100 pF 10 nF
Application Schematic:
Driver Amplifier ~1880MHz Operation
22 nF
J1
RF IN
1
2
3
5
1 pF
0
Ω
J2
RF OUT
VPD
4
10 nF
100 pF
3.3 nH
VCC
100 pF 10 nF
4-336
Rev A9 050117
RF2361
Evaluation Board Schematic:
Low Noise Amplifier ~881MHz Operation
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1
VPD
GND
VCC
1
2
3
C7
4.7
μ
F
C3
22 nF
50Ω μstrip
J1
RF IN
1
2
3
5
4
C4
2 pF
R1
Ω
1k
50Ω μstrip
50Ω μstrip
J2
RF OUT
VPD
C1
10 nF
C2
220 pF
L1
12 nH
2361410 Rev-
VCC
C5 C6
220 pF 10 nF
Evaluation Board Schematic:
Driver Amplifier ~836MHz Operation
P1
1
2
3
P1-1
VPD
GND
VCC
C7
4.7
μ
F
C3
22 nF
50Ω μstrip
J1
RF IN
1
2
3
5
4
C4
2 pF
R1
0
Ω
50Ω μstrip
50Ω μstrip
J2
RF OUT
VPD
C1
10 nF
C2
220 pF
L1
12 nH
2361400 Rev-
VCC
C5 C6
220 pF 10 nF
Rev A9 050117
4-337
RF2361
Evaluation Board Layout - 900MHz Driver
Board Size 0.948” x 1.063”
Board Thickness 0.031”; Board Material FR-4
Evaluation Board Layout - 900MHz LNA
4-338
Rev A9 050117
RF2361
Driver Amp 836 MHz
CC versus VPD
Driver Amp 836 MHz
Gain versus VPD
I
26.0
25.5
25.0
24.5
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
20.92
20.90
20.88
20.86
20.84
20.82
20.80
20.78
20.76
20.74
20.72
2.7V Icc (mA)
3.0V Icc (mA)
3.3V Icc (mA)
3.6V Icc (mA)
2.7V Gain (dB)
3.0V Gain (dB)
3.3V Gain (dB)
3.6V Gain (dB)
2.7
2.8
2.9
3.0
2.70
2.80
2.90
3.00
VPD
VPD
Driver Amp 836 MHz
OIP3 versus VPD
Driver Amp 836 MHz
OUT 1dB versus VPD
P
33.0
32.0
31.0
30.0
29.0
28.0
27.0
15.0
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
2.7V OIP3 (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
2.7V P 1dB (dBm)
3.0V P 1dB (dBm)
3.3V P 1dB (dBm)
3.6V P 1dB (dBm)
2.7
2.8
2.9
3.0
2.7
2.8
2.9
3.0
VPD
VPD
Driver Amp 836 MHz
Noise Figure versus VPD
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
2.70
2.80
2.90
3.00
VPD
Rev A9 050117
4-339
RF2361
Low Noise Amplifier 881 MHz
Gain versus ICC
Low Noise Amplifier 881 MHz
OIP3 versus ICC
19.95
19.90
19.85
19.80
19.75
19.70
19.65
19.60
19.55
29.0
28.5
28.0
27.5
27.0
26.5
26.0
25.5
25.0
24.5
24.0
2.7V Gain (dB)
2.7V OIP3 (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
3.0V Gain (dB)
3.3V Gain (dB)
3.6V Gain (dB)
6.00
6.50
7.00
7.50
8.00
ICC
8.50
9.00
9.50
10.00
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
ICC (mA)
Low Noise Amplifier 881 MHz
IIP3 versus ICC
Low Noise Amplifier 881 MHz
OUT 1dB versus ICC
P
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
2.7V IIP3 (dBm)
3.0V IIP3 (dBm)
3.3V IIP3 (dBm)
3.6V IIP3 (dBm)
2.7V Pout 1dB (dBm)
3.0V Pout 1dB (dBm)
3.3V Pout 1dB (dBm)
3.6V Pout 1dB (dBm)
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
ICC (mA)
ICC (mA)
Low Noise Amplifier 881 MHz
Noise Figure versus ICC
1.42
1.41
1.40
1.39
1.38
1.37
1.36
1.35
1.34
1.33
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
6.00
6.50
7.00
7.50
8.00
ICC
8.50
9.00
9.50
10.00
4-340
Rev A9 050117
RF2361
PCB Design Requirements
PCB Surface Finish
The PCB surface finish used for RFMD's qualification process is electroless nickel, immersion gold. Typical thickness is
3μinch to 8μinch gold over 180μinch nickel.
PCB Land Pattern Recommendation
PCB land patterns are based on IPC-SM-782 standards when possible. The pad pattern shown has been developed and
tested for optimized assembly at RFMD; however, it may require some modifications to address company specific
assembly processes. The PCB land pattern has been developed to accommodate lead and package tolerances.
PCB Metal Land Pattern
A = 0.70 x 1.00 (mm) Typ.
Dimensions in mm.
Pin 5
Pin 1
A
A
A
A
0.95 Typ.
1.90 Typ.
A
2.60
Figure 1. PCB Metal Land Pattern (Top View)
Rev A9 050117
4-341
RF2361
PCB Solder Mask Pattern
Liquid Photo-Imageable (LPI) solder mask is recommended. The solder mask footprint will match what is shown for the
PCB metal land pattern with a 2mil to 3mil expansion to accommodate solder mask registration clearance around all
pads. The center-grounding pad shall also have a solder mask clearance. Expansion of the pads to create solder mask
clearance can be provided in the master data or requested from the PCB fabrication supplier.
A = 0.90 x 1.20 (mm) Typ.
Dimensions in mm.
Pin 5
Pin 1
A
A
A
A
A
0.95 Typ.
1.90 Typ.
2.60
Figure 2. PCB Solder Mask (Top View)
4-342
Rev A9 050117
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