RF2364 [RFMD]
3V PCS LOW NOISE AMPLIFIER; 3V PCS低噪声放大器
| 型号： | RF2364 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 3V PCS LOW NOISE AMPLIFIER |
| 文件： | 总10页 (文件大小：111K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
RF2364
3V PCS LOW NOISE AMPLIFIER
4
Typical Applications
• CDMA PCS LNA
• TDMA PCS LNA
• General Purpose Amplification
• Commercial and Consumer Systems
• W-CDMA/CDMA2000 LNA
Product Description
4
1.60
+ 0.01
0.15
0.05
The RF2364 is a low noise amplifier with a high dynamic
range designed for CDMA and TDMA PCS, as well as
W-CDMA/CDMA2000 applications. The device functions
as an outstanding front end low noise amplifier and the
bias current can be set externally. The IC includes a
power down feature used to completely turn-off the
device and is featured in a standard SOT 5-lead plastic
package.
0.400
1
2.90
+ 0.10
0.950
2.80
+ 0.20
1.44
1.04
3° MAX
0° MIN
Dimensions in mm.
0.127
0.45
+ 0.10
Optimum Technology Matching® Applied
Package Style: SOT 5-Lead
Si BJT
GaAs MESFET
üGaAs HBT
SiGe HBT
Si Bi-CMOS
Si CMOS
Features
• Low Noise and High Intercept Point
• 18dB Gain
• Power Down Control
RF IN
GND1
VPD
1
2
3
5
4
RF OUT
• Single 3.0V Power Supply
• PCS and W-CDMA Band Operation
• 1.8GHz to 2.5GHz Operation
GND2
Ordering Information
RF2364
3V PCS Low Noise Amplifier
RF2364 PCBA
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A4 010501
4-209
Preliminary
RF2364
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to +8.0
Unit
Caution! ESD sensitive device.
V
DC
Input RF Level
Storage Temperature
+10
-40 to +150
dBm
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Operating Range
Overall Frequency Range
1930
2.7
1990
3.3
MHz
V
Supply Voltage (V
)
3.0
CC
4
Power Down Voltage (V
)
2.7
2.9
V
For normal operation
For power down operation
PD
0.9
V
Current Consumption
Power Down Current
17.0
23.5
mA
V
=3.0V, Values reflect I +I
CC PD
CC
CC
10
µA
V
=3.0V, V <0.9V
PD
o
Operating Ambient Temperature
-40
+85
C
Input Impedance
Output Impedance
Low Noise Amplifier
Performance
50
50
Ω
Ω
o
T=25 C
Power Gain
18
21
dB
V
V
=3.0V, I =17mA
CC
CC
CC
Noise Figure
Input IP3
1.8
+5
dB
dBm
=3.0V
Input VSWR
Output VSWR
Input P1dB
2:1
2:1
With external matching components.
-8.5
dBm
4-210
Rev A4 010501
Preliminary
RF2364
Pin
1
Function Description
Interface Schematic
RF input pin. This pin is DC coupled and matched to 50Ω.
RF IN
To Bias
Circuit
RF OUT
RF IN
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
2
3
GND1
VPD
For low noise amplifier applications, this pin is used to control the bias
current. See plots for bias current settings. An external resistor (R1)
PD
can be used to set the bias current for any V voltage (See Applica-
PD
tion Note).
For driver amplifier applications, this is the Power Down pin for the IC.
4
V
=2.8V + 0.1V is required for proper operation. V < 0.9V turns off
PD
PD
the Part. External RF bypassing is required. The trace length between
the pin and the bypass capacitors should be minimized. The ground
side of the bypass capacitors should connect immediately to ground
plane. Nominal current required for V =2.8V is 2.0mA typical and
PD
3.0mA Max (@ V =2.9V).
PD
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
4
5
GND2
Amplifier Output pin. This pin is an open-collector output. It must be
RF OUT
biased to either V or pin 4 through a choke or matching inductor.
CC
This pin is typically matched to 50Ω with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
Rev A4 010501
4-211
Preliminary
RF2364
Application Notes
Power Down Pin Resistor
The Power Down pin (pin 3) of the RF2364 3V Low Noise Amplifier should be maintained at 2.7V to 2.9V for proper
operation. This voltage range ensures the correct bias current will be present at the Power Down pin of the device. How-
ever, an external series resistor may be used to allow various operating voltages at this pin (see R1 in Application Sche-
matics). The required value for this resistor may be roughly calculated by using the operating input voltage to the Power
Down pin, the desired voltage at the device, and the typical current consumption for the Power Down pin, along with
Ohms law.
For example, assume the design will supply 3.3V to the Power Down pin of the device, but the biasing circuitry internal to
the RF2364 requires 2.8V, and the power down bias current is known to typically be 5.5mA, then the required value from
R1 would be found from:
4
3.3V – 2.8V
----------------------------
= 90.9Ω
5.5mA
4-212
Rev A4 010501
Preliminary
RF2364
Application Schematic
PCS Band
VCC
10 nF
4.7 nH
1.5 pF
15 nF
RF IN
1
2
3
5
4
RF OUT
1.5 pF
8.2 nH
10 nF
R1
4
VPD
Optional See
Application
Notes
3.3 nH
Application Schematic
W-CDMA Band
VCC
10 nF
4.7 nH
1 pF
47 pF
RF IN
1
2
3
5
4
RF OUT
8.2 nH
10 nF
R1
VPD
Optional See
Application
Notes
Rev A4 010501
4-213
Preliminary
RF2364
Evaluation Board Schematic - PCS Band
(Download Bill of Materials from www.rfmd.com.)
P1
P2
1
2
GND
1
2
GND
VPD
P1-2
VCC
P2-2
VCC
C2
10 nF
L2
C1
4.7 nH
15 nF
50 Ω µstrip
50 Ω µstrip
J1
RF IN
J2
RF OUT
4
1
2
3
5
4
C3
1.5 pF
C4
1.5 pF
L1
8.2 nH
VPD
C5
L3
10 nF
3.3 nH
2364400-
4-214
Rev A4 010501
Preliminary
RF2364
Evaluation Board Layout
Board Size 1” x 1”
Board Thickness 0.031”; Board Material FR-4
4
Rev A4 010501
4-215
Preliminary
RF2364
Gain versus VCC
IIP3 versus VCC
VPD=2.8V, Frequency=1960MHz
VPD=2.8V, Frequency=1960MHz
19.00
18.50
18.00
17.50
17.00
16.50
16.00
15.50
15.00
6.50
6.00
5.50
5.00
4.50
4.00
3.50
3.00
4
IIP3, -30º
IIP3, 25º
IIP3, 85º
Gain, -30º
Gain, 25º
Gain, 85º
2.7
2.8
2.9
3
3.1
3.2
3.3
3.3
2.9
2.7
2.8
2.9
3
3.1
3.2
3.3
3.3
3.3
VCC (V)
VCC (V)
Noise Figure versus VCC
Input P1dB versus VCC
VPD=2.8V, Frequency=1960MHz
VPD=2.8V, Frequency=1960MHz
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-7.90
-8.00
-8.10
-8.20
-8.30
-8.40
-8.50
-8.60
-8.70
-8.80
-8.90
P1dB, -30º
P1dB, 25º
P1dB, 85º
NF, -30º
NF, 25º
NF, 85º
2.7
2.8
2.9
3
3.1
3.2
2.7
2.8
2.9
3
3.1
3.2
VCC (V)
VCC (V)
ICC versus VCC
Gain versus VPD
VCC=3.0V, Frequency=1960MHz
VPD=2.8V, Frequency=1960MHz
19.00
18.50
18.00
17.50
17.00
16.50
16.00
15.50
9.20
9.00
8.80
8.60
8.40
8.20
8.00
7.80
7.60
Icc, -30º
Icc, 85º
Icc, 25º
Gain, -30º
Gain, 25º
Gain, 85º
2.7
2.8
2.9
3
3.1
3.2
2.7
2.75
2.8
2.85
VCC (V)
VPD (V)
4-216
Rev A4 010501
Preliminary
RF2364
IIP3 versus VPD
VCC=3.0V, Frequency=1960MHz
Noise Figure versus VPD
VCC=3.0V, Frequency=1960MHz
6.00
5.80
5.60
5.40
5.20
5.00
4.80
4.60
4.40
4.20
4.00
2.20
2.00
1.80
1.60
1.40
1.20
1.00
NF, -30º
NF, 25º
NF, 85º
IIP3, -30º
IIP3, 25º
IIP3, 85º
4
2.7
2.75
2.8
2.85
2.9
2.7
2.75
2.8
2.85
2.9
VPD (V)
VPD (V)
P1dB versus VPD
IPD versus VPD
VCC=3.0V, Frequency=1960MHz
VCC=3.0V, Frequency=1960MHz
-7.40
-7.60
-7.80
-8.00
-8.20
-8.40
-8.60
-8.80
-9.00
-9.20
-9.40
6.00
5.80
5.60
5.40
5.20
5.00
4.80
4.60
4.40
4.20
4.00
P1dB, -30º
P1dB, 25º
P1dB, 85º
Ipd, -30º
Ipd, 25º
Ipd, 85º
2.7
2.75
2.8
2.85
2.9
2.7
2.75
2.8
2.85
2.9
VPD (V)
VPD (V)
Gain versus Frequency
CC=3.0V, VPD=2.8V
Input Impedance versus Frequency
CC=3.0V, VPD=2.8V
V
V
19.00
18.50
18.00
17.50
17.00
16.50
16.00
1.85
1.8
1.75
1.7
Gain, -30º
Gain, 25º
Gain, 85º
S11, -30º
S11, 25º
S11, 85º
1.65
1.6
1.55
1930
1940
1950
1960
1970
1980
1990
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
Frequency (MHz)
Rev A4 010501
4-217
Preliminary
RF2364
Output Impedance versus Frequency
CC=3.0V, VPD=2.8V
V
1.55
1.5
S22, -30º
S22, 25º
S22, 85º
1.45
1.4
4
1.35
1.3
1930
1940
1950
1960
1970
1980
1990
Frequency (MHz)
4-218
Rev A4 010501
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