RF2365 [RFMD]
3V LOW NOISE AMPLIFIER; 3V低噪声放大器
| 型号： | RF2365 |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 3V LOW NOISE AMPLIFIER |
| 文件： | 总8页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF2365
3V LOW NOISE AMPLIFIER
4
Typical Applications
• DCS GSM
• PCS CDMA
• PCS TDMA
• 2.4GHz Systems
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
4
1.60
+ 0.01
0.15
0.05
The RF2365 is a low noise amplifier with a high dynamic
range designed for the receive front end of digital cellular
applications at PCS/DCS frequencies. It is designed to
amplify low level signals with minimum noise contribution
while operating in the harsh, interference-rich environ-
ments of newly deployed digital subscriber units. The part
provides excellent performance as a LNA for 2.4GHz
radio applications. The IC is featured in a standard
SOT5-lead plastic package.
0.400
1
2.90
+ 0.10
0.950
2.80
+ 0.20
1.44
1.04
3° MAX
0° MIN
Dimensions in mm.
0.127
0.45
+ 0.10
Optimum Technology Matching® Applied
Package Style: SOT 5-Lead
Si BJT
GaAs HBT
GaAs MESFET
!
Si Bi-CMOS
SiGe HBT
Si CMOS
Features
• 1.6dB Noise Figure @ 1850MHz
• 1.75dB Noise Figure @ 2450MHz
• 18.0dB Gain at PCS/DCS
RF IN
GND1
PD
1
5
4
RF OUT
• 15.5dB Gain at 2.45GHz
• External Bias Control
2
3
• Extremely Small SOT23-5 Package
GND2
Ordering Information
RF2365
3V Low Noise Amplifier
RF2365 PCBA
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A4 001201
4-215
RF2365
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Rating
Unit
Supply Voltage
-0.5 to +8.0
V
DC
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Input RF Level
Operating Ambient Temperature
Storage Temperature
+10
-40 to +85
-40 to +150
dBm
°C
°C
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Overall
RF Frequency Range
1500
2500
MHz
4
Schematic per 1.9GHz LNA Application
Schematic, V = 3.0 V = 3.0V,
T=25°C
PCS Performance
PD
CC
Gain
16
18
20
dB
V
V
=3.0V, I =8.0mA
CC
CC
CC
Noise Figure
Off Mode Gain
1.6
-15
dB
dB
=3.0V, V =0
PD
|S
|
25
dB
12
Input IP3
-3.5
dBm
V
=3.0V, I =5.0mA, R =150Ω (see
CC CC 1
application schematic)
V =3.0V, I =6.5mA, R =75Ω (see appli-
CC
+2.0
+4.0
22.0
dBm
dBm
dBm
CC
1
cation schematic)
=3.0V, I =8.0mA, R =0Ω (see appli-
V
CC
CC
1
cation schematic)
V =3.0V, I =8.0mA, R =0Ω (see appli-
CC
Output IP3
20.0
28.0
CC
1
cation schematic)
Input VSWR
Output VSWR
1.7
1.4
Schematic per 2.4GHz LNA Application
Schematic
T=25°C
2.4GHz Performance
Gain
15.5
dB
V
=3.0V, I =8.0mA
CC
CC
Noise Figure
Input IP3
1.75
+2.0
dB
dBm
V
=3.0V, I =8.0mA
CC
CC
Input VSWR
1.3
Output VSWR
1.75
T = 25 °C
Power Supply
Voltage (V
)
3
V
CC
Current Consumption
5.0
0
8.0
6.5
5.0
11.0
1
mA
mA
mA
µA
V
V
V
V
=3.0V, IIP3=+4.0dBm
=3.0V, IIP3=+2.0dBm
=3.0V, IIP3=-3.5dBm
CC
CC
CC
CC
Power Down
=3.0V; V ≤0.9V
PD
4-216
Rev A4 001201
RF2365
Pin
1
Function Description
Interface Schematic
RF input pin. This pin is DC coupled.
RF IN
PD
To Bias
Circuit
RF IN
GND1
Ground connection. See evaluation board schematic notes.
2
3
GND1
PD
Power down pin. This pin serves as the interstage for the 2-stage LNA.
PD
An inductor is required to pull pin 3 to V (see application schematic).
CC
If desired, this voltage can be lowered to trade off IP3 versus I
(See table below.)
.
CC,TOTAL
To RF
Stages
4
Ground connection. See evaluation board schematic notes.
4
5
GND2
RF OUT
Amplifier Output pin. This pin is an open-collector output. It must be
biased to either V or pin 4 through a choke or matching inductor.
CC
This pin is typically matched to 50Ω with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
To Bias
Circuit
GND2
ICC
R1
IIP3
0Ω
75Ω
150Ω
+4.0dBm
+2.0dBm
-3.5dBm
8.0mA
6.5mA
5.0mA
Rev A4 001201
4-217
RF2365
Application Schematic - 1.9GHz
47 pF
VCC
3.9 nH
RF IN
1
2
3
5
4
RF OUT
22 nF
1 pF
4
3.3 nH
0
Ω
EN
47 pF
Application Schematic - 2.4GHz
NOTES:
* R1 is left open.
22 pF
VCC
3.9 nH
RF IN
1
2
3
5
4
RF OUT
22 nF
1.5 pF
2.2 nH
R1*
EN
22 pF
4-218
Rev A4 001201
RF2365
Evaluation Board Schematic - 1.9GHz
(Download Bill of Materials from www.rfmd.com.)
P1
1
P2
G N D
VCC
1
2
G N D
EN
C 2
47 pF
C 3
10 nF
P1-2
2
P2-2
VCC
2365400, Rev
A
L2
C 1
3.9 nH
22 nF
50 Ω µstrip
50 Ω µstrip
J1
R F IN
J2
R F O U T
1
2
3
5
C 4
1 pF
*
4
L1
3.3 nH
R 1
0
Ω
*
EN
4
C 6
C 5
10 nF
47 pF
N O TES:
*G round traces on pins
inductor. If an inductor is not used, the dim ensions are as follow s:
Length 140 m ils
W idth 20 m ils
H eight = 31 m ils from the gound plane. D ielectric is FR -4.
2
and 4 are equivalent to a 1.8 nH
=
=
Evaluation Board Schematic - 2.4GHz
P1
P2
1
2
1
2
GND
VCC
GND
EN
C2
22 pF
C3
10 nF
P1-2
P2-2
VCC
2365401, Rev
-
L2
C1
3.9 nH
22 nF
50 Ω µstrip
50 Ω µstrip
J1
RF IN
J2
RF O UT
1
2
3
5
4
C4
1.5 pF
**
L1
2.2 nH
EN
C6
10 nF
C5
22 pF
R1*
N OTES:
* R1 is left open.
**G round trace on pin 2 is equivalent to
a 1.0 nH inductor. If an
inductor is not used, the dim ensions are as follows:
Length = 85 m ils
W idth
= 20 m ils
H eight = 31 m ils from the gound plane. D ielectric is FR -4.
Rev A4 001201
4-219
RF2365
Evaluation Board Layout
Board Size 1” x 1”
1.9GHz
Board Thickness 0.031”; Board Material FR-4
4
2.4GHz
4-220
Rev A4 001201
RF2365
Gain versus Frequency and Temp
(VCC = 2.8 V, RF IN = -35 dBm)
Gain versus Frequency and VCC
(Temp = +25°C, RF IN = -36 dBm)
19.20
19.00
18.80
18.60
18.40
18.20
18.00
17.80
17.60
17.40
17.20
17.00
16.80
16.60
16.40
16.20
16.00
18.80
18.60
18.40
18.20
18.00
17.80
17.60
17.40
17.20
17.00
16.80
Gain, 2.8V
Gain, 3.0V
Gain, 3.2V
Gain, -40°C
Gain, +25°C
Gain, +85°C
4
1805.00
1823.75
1842.50
1861.25
1880.00
1880.00
1880.00
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
Frequency (MHz)
Input P1dB versus Frequency and Temp
(VCC = 2.8 V)
Input P1dB versus Frequency and VCC
(Temp = +25°C)
-2.20
-2.40
-2.60
-2.80
-3.00
-3.20
-3.40
-3.60
-3.80
-4.00
-4.20
-4.40
-4.60
-4.80
-5.00
-5.20
-5.40
-5.60
-5.80
-6.00
-6.20
-6.40
-6.60
-6.80
-7.00
-7.20
-2.80
-3.00
-3.20
-3.40
-3.60
-3.80
-4.00
-4.20
-4.40
-4.60
-4.80
-5.00
-5.20
-5.40
-5.60
-5.80
-6.00
-6.20
-6.40
-6.60
-6.80
-7.00
-7.20
-7.40
-7.60
-7.80
-8.00
IP1dB, 2.8V
IP1dB, 3.0V
IP1dB, 3.2V
IP1dB, -40°C
IP1dB, +25°C
IP1dB, +85°C
1805.00
1823.75
1842.50
1861.25
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
Frequency (MHz)
IIP3 versus Frequency and Temp
(VCC = 2.8 V)
IIP3 versus Frequency and VCC
(Temp = +25°C)
7.50
7.00
6.50
6.00
5.50
5.00
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
6.00
5.50
5.00
4.50
4.00
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
-0.50
-1.00
-1.50
-2.00
-2.50
-3.00
-3.50
-4.00
-4.50
IIP3, 2.8V
IIP3, -40°C
IIP3, 3.0V
IIP3, 3.2V
IIP3, +25°C
IIP3, +85°C
1805.00
1823.75
1842.50
1861.25
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
Frequency (MHz)
Rev A4 001201
4-221
RF2365
ICC versus VCC and Temp
Noise Figure versus Frequency and VCC
(Temp = Ambient)
10.50
10.00
9.50
9.00
8.50
8.00
7.50
7.00
6.50
6.00
5.50
5.00
4.50
1.34
1.33
1.32
1.31
1.30
1.29
1.28
NF, 2.8V
Icc, -40°C
Icc, +25°C
Icc, +85°C
NF, 3.0V
NF, 3.2V
4
2.80
3.00
VCC
3.20
1805.00
1823.75
1842.50
1861.25
1880.00
Frequency (MHz)
Input/Output Impedance @ 2.8 V
Swp Max
3.5GHz
S[2,2]
S[1,1]
Swp Min
0.1GHz
4-222
Rev A4 001201
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