RF2362 [RFMD]
PCS CDMA/TDMA 3V PA DRIVER AMPLIFIER; PCS CDMA / TDMA 3V PA驱动放大器型号: | RF2362 |
厂家: | RF MICRO DEVICES |
描述: | PCS CDMA/TDMA 3V PA DRIVER AMPLIFIER |
文件: | 总6页 (文件大小:86K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RF2362
PCS CDMA/TDMA 3V
PA DRIVER AMPLIFIER
4
Typical Applications
• TDMA/CDMA/FM PCS Tx Amplifier
• Low Noise Transmit Driver Amplifier
• 2.4GHz WLAN Systems
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
4
1.60
+ 0.01
0.15
0.05
The RF2362 is a low noise CDMA/TDMA PA driver ampli-
fier with a very high dynamic range designed for transmit
digital PCS applications at 1880MHz. The device func-
tions as an outstanding PA driver amplifier in the transmit
chain of digital subscriber units where low transmit noise
power is a concern. The IC includes a power down fea-
ture that can be used to completely turn off the device.
The IC is featured in a standard SOT 5-lead plastic pack-
age.
0.400
1
2.90
+ 0.10
0.950
2.80
+ 0.20
1.44
1.04
3° MAX
0° MIN
Dimensions in mm.
0.127
0.45
+ 0.10
Optimum Technology Matching® Applied
Package Style: SOT 5-Lead Package
Si BJT
GaAs MESFET
üGaAs HBT
SiGe HBT
Si Bi-CMOS
Si CMOS
Features
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
RF IN
G N D 1
VPD
1
5
4
G N D 2
• Single 2.5V to 6.0V Power Supply
• 150MHz to 2500MHz Operation
• Extremely Small SOT23-5 Package
2
3
R F O UT
Ordering Information
RF2362
RF2362 PCBA
PCS CDMA/TDMA 3V PA Driver Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A4 010720
4-193
RF2362
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to +8.0
Unit
Caution! ESD sensitive device.
V
DC
Input RF Level
Operating Ambient Temperature
Storage Temperature
+10
-40 to +85
-40 to +150
dBm
°C
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Overall
RF Frequency Range
150 to 2500
MHz
4
Schematic per Evaluation Board, T = 25°C,
1880MHz Performance
RF=1880MHz, V =2.8V
PD
Gain
19
19
20.1
20.1
20.1
+25.5
+25.0
+24.5
2.2
21.5
21.5
21.5
+35
dB
dB
V
V
V
V
V
V
V
V
V
V
V
V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
19
dB
Output IP3
+24
dBm
dBm
dBm
dB
Noise Figure
Reverse Isolation
2.5
2.5
2.5
2.2
dB
2.2
dB
32
dB
32
dB
32
dB
Input VSWR
Output VSWR
1.8:1
1.6:1
2.0:1
2.0:1
Using External LC network used on Evalua-
tion Board
P
14
12.5
11
14.5
14
dBm
dBm
dBm
V
V
V
=3.5V
=3.0V
=2.7V
1dB
CC
CC
CC
13.5
T = 25 °C
Power Supply
Voltage (V
)
2.5 to 6.0
2.8
V
V
CC
Voltage (V
)
2.7
24
2.9
43
PD
Current Consumption
35
mA
V
=3.5V; V =2.8 V; V + V
- Current
CC
CC
PD
PD
Consumption from V is 8.5 mA Typ. @
PD
V
V
V
V
= 2.8V and 12 mA Max @ V =2.9 V
PD
PD
CC
CC
CC
24
29
32
37
38
43
10
mA
mA
µΑ
=3.0V; V =2.7V; V + V
PD PD
CC
CC
=2.7V; V =2.9V; V + V
PD
PD
- Power Down
=3.5V; V ≤ 0.9V
PD
4-194
Rev A4 010720
RF2362
Pin
1
Function Description
Interface Schematic
RF input pin. This pin is DC-coupled and matched to 50Ω at 1880MHz.
RF IN
PD
TO OUTPUT
RF IN
STAGE
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
2
3
GND1
VPD
Power Down for the IC. V = 2.8V +/- 0.1V turns on the part.
PD
PD
V
<0.9V turns off the part. External RF bypassing is required. The
PD
4
trace length between the pin and the bypass capacitors should be min-
imized. The ground side of the bypass capacitors should connect
immediately to ground plane. Nominal current required for V = 2.8V
PD
is 8.5 mA typical and 12 mA Max (@V =2.9 V).
PD
Amplifier Output pin. This pin is an open-collector output. It must be
4
5
RF OUT
GND2
biased to either V or pin 4 through a choke or matching inductor.
CC
This pin is typically matched to 50Ω with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
Rev A4 010720
4-195
RF2362
Application Schematic:
~1880 MHz Operation, Internal Collector Bias
10 pF
J1
1
2
3
5
RF IN
R1
0 Ω
1 pF
J2
RF OUT
VPD
4
10 nF
220 pF
4.7 nH
4
VCC
220 pF
10 nF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1
1
P1-1
VPD
GND
VCC
2
3
C7
4.7 µF
C3
4 pF
50 Ω µstrip
J1
1
2
3
5
4
RF IN
C4
1 pF
R1
0 Ω
50 Ω µstrip
50 Ω µstrip
J2
RF OUT
VPD
C1
C2
L1
10 nF
220 pF
4.7 nH
2362400-
VCC
C5
C6
220 pF
10 nF
4-196
Rev A4 010720
RF2362
Evaluation Board Layout
Board Size 1” x 1”
Board Thickness 0.014”; Board Material FR-4
4
Rev A4 010720
4-197
RF2362
ICC versus VPD
(Averaged)
Gain versus VPD
(Averaged)
43.0
19.80
19.75
19.70
19.65
19.60
19.55
19.50
19.45
19.40
19.35
19.30
19.25
19.20
19.15
19.10
19.05
19.00
2.7V Icc (mA)
3.0V Icc (mA)
2.7V Gain (dBm)
42.0
41.0
40.0
39.0
38.0
37.0
36.0
35.0
34.0
33.0
32.0
31.0
30.0
29.0
28.0
3.0V Gain (dBm)
3.3V Gain (dBm)
3.6V Gain (dBm)
3.3V Icc (mA)
3.6V Icc (mA)
4
2.7
2.8
2.9
3.0
2.70
2.80
2.90
3.00
VPD
VPD
OIP3 versus VPD
(Averaged)
P1dB versus VPD
(Averaged)
26.5
26.0
25.5
25.0
24.5
24.0
23.5
16.0
15.5
15.0
14.5
14.0
13.5
13.0
2.7V OIP3 (dBm)
2.7V P1dB (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
3.0V P1dB (dBm)
3.3V P 1dB (dBm)
3.6V P 1dB (dBm)
2.7
2.8
2.9
3.0
2.7
2.8
2.9
3.0
VPD
VPD
Noise Figure versus VPD
2.25
2.24
2.23
2.22
2.21
2.20
2.19
2.18
2.17
2.16
2.15
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
2.70
2.80
2.90
3.00
VPD
4-198
Rev A4 010720
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