RF2363PCBA [RFMD]
DUAL-BAND 3V LOW NOISE AMPLIFIER; DUAL- BAND 3V低噪声放大器
| 型号： | RF2363PCBA |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | DUAL-BAND 3V LOW NOISE AMPLIFIER |
| 文件： | 总10页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
RF2363
DUAL-BAND 3V LOW NOISE AMPLIFIER
4
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
4
0.15
0.05
1.59
1.61
The RF2363 is
a dual-band Low Noise Amplifier
0.365
0.650
designed for use as a front-end for 950MHz GSM/
1850MHz DCS applications and may be used for dual-
band cellular/PCS applications. The 900MHz LNA is a
single-stage amplifier; the 1900MHz LNA is a 2-stage
amplifier. The part may also be tuned for applications in
other frequency bands. The device has an excellent com-
bination of low noise figure and high linearity at a very low
supply current. It is packaged in a very small industry
standard SOT 8-lead plastic package.
2.80
3.00
2.60
3.00
1.44
1.04
0.127
3°MAX
0°MIN
*When Pin 1 is in upper
left, text reads downward
(as shown).
0.35
0.55
Optimum Technology Matching® Applied
Package Style: SOT, 8-Lead
Si BJT
GaAs MESFET
üGaAs HBT
SiGe HBT
Si Bi-CMOS
Si CMOS
Features
• Low Noise and High Intercept Point
• 18dB Gain at 900MHz
• 21dB Gain at 1900MHz
RF OUT1
GND
RF IN1
GND
1
2
3
4
8
7
6
5
• Low Supply Current
• Single 2.5V to 5.0V Power Supply
• Very Small SOT-23-8 Plastic Package
RF OUT2
EN1
RF IN2
EN2
Ordering Information
RF2363
RF2363 PCBA
Dual-Band 3V Low Noise Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev B2 010129
4-199
Preliminary
RF2363
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
V
DC
Caution! ESD sensitive device.
Input RF Level
Operating Ambient Temperature
Storage Temperature
+10
-40 to +85
-40 to +150
dBm
°C
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Overall
RF Frequency Range
800 to 1000
1800 to 2000
MHz
MHz
4
T = 25°C, RF=950MHz, V =2.8V,
EN1=2.8V, EN2=0V
CC
950MHz Performance
Gain
Isolation
16
18
16
20
dB
dB
EN1=0V
Gain Step
34
dB
Gain - Isolation
Noise Figure
Output IP3
Input P1dB
Reverse Isolation
Input VSWR
Output VSWR
1.3
dB
+17
+24
-10
20
1.8:1
1.8:1
dBm
dBm
dB
2:1
2:1
No external matching
With external match as per GSM/DCS Appli-
cation Schematic
T = 25°C, RF=1850MHz, V =2.8V,
EN2=2.8V, EN1=0V
CC
1850MHz Performance
Gain
Isolation
20
21.5
10
24
dB
dB
EN2=0V
Gain Step
31.5
1.4
+22
-12
30
1.7:1
1.7:1
dB
dB
dBm
dBm
dB
Gain - Isolation
Noise Figure
Output IP3
Input P1dB
Reverse Isolation
Input VSWR
Output VSWR
+16
2:1
2:1
No external matching
With external match as per GSM/DCS Appli-
cation Schematic
LNA Select
“Enable” Voltage
“Disable” Voltage
Power Supply
Voltage
V
V
V
CC
0
T = 25 °C
2.8
2.5 to 5.0
5
V
V
mA
Specifications
Operating limits
900MHz LNA Enabled, 1900MHz LNA Dis-
abled; total DC current
Current Consumption
7.5
mA
1900MHz LNA Enabled, 900MHz LNA Dis-
abled; total DC current
1
µA
EN1=EN2=0V
4-200
Rev B2 010129
Preliminary
RF2363
Pin
1
Function Description
Interface Schematic
RF output pin for ~900MHz LNA. This pin is an open-collector output. It
RF OUT1
RF OUT1
must be biased to either V or pin 4 through a choke or matching
CC
RF IN1
inductor. It is typically matched to 50Ω with a shunt bias/matching
inductor and series blocking/matching capacitor. Refer to application
schematics.
To Bias
Circuits
Ground connection.
2
3
GND
LNA1
LNA2
NOTE: Ground traces on pins 2 and 7 are equivalent to a small amount
of inductance (~0.75nH). The dimensions of these lines are as follows.
Pin 2: L=56mils, W=15mils, H=31mils
Pin 7: L=56mils, W=15mils, H=31mils
Dielectric is FR-4.
Pin 2
Pin 7
RF output pin for ~1900MHz LNA. This pin is an open-collector output.
It must be biased to either V or pin 4 through a choke or matching
RF OUT2
EN2
4
CC
RF OUT2
inductor. It is typically matched to 50Ω with a shunt bias/matching
inductor and series blocking/matching capacitor. Refer to application
schematics.
RF IN2
Enable pin for ~900MHz LNA. A voltage equal to the supply voltage
LNA. This pin should be disabled (0V) when the ~1900MHz LNA is in
use.
4
5
6
EN1
EN2
Enable pin for ~1900MHz LNA. A voltage equal to the supply voltage
LNA. This pin should be disabled (0V) when the ~900MHz LNA is in
use. See package drawing for description of pin orientation.
See pin 3.
RF input pin for ~1900MHz. This pin is matched to approximately 50Ω See pin 3.
at DCS/PCS frequencies. An external AC coupling capacitor is required
at this pin.
RF IN2
Same as pin 2.
See pin 2.
7
8
GND
RF IN1
RF input pin for ~900MHz. This pin is matched to approximately 50Ω at See pin 1.
GSM/Cellular frequencies. An external AC coupling capacitor is
required at this pin.
Rev B2 010129
4-201
Preliminary
RF2363
RF2363 Theory of Operation and Application Information
The RF2363 contains two independent low noise
amplifiers which have been optimized for dual-band
applications in the GSM (905MHz to 960MHz) and
DCS (1805MHz to 1880MHz) frequency bands. Fabri-
cated using heterojunction bipolar transistor (HBT)
technology, the RF2363 delivers high linear gain at a
very low noise figure and low power consumption.
Internal temperature compensation keeps the gain
tightly controlled over temperature extremes (typically
less than 1dB of gain variation from -40°C to +85°C at
2.8V). A 50Ω input impedance allows the part to be
connected to standard receiver front end filters without
additional matching components.
1900MHz LNA
The 1900MHz LNA is implemented by two common
emitter stages in cascade. The first stage is biased
through an external inductor at the EN2 pin. This
inductor also acts as an interstage match; a resistor in
parallel with the inductor is recommended to 'de-Q' the
inductor, thus providing a broader band interstage
match. An external bias inductor from the output pin
(RF OUT2) to VCC provides DC biasing for the second
stage transistor and assists in matching the output
impedance to the next receiver stage. Low and high
frequency bypass capacitors should be used on the
supply side of both the EN2 and RF OUT2 bias induc-
tors. An AC coupling capacitor is required at the RF
IN2 pin.
4
MODE CONTROL
The RF2363 incorporates two enable pins (EN1 and
EN2) for biasing the desired LNA according to the table
below.
LAYOUT CONSIDERATIONS
To provide optimal balance of gain and linearity, a small
amount of inductance is required in the ground traces
of the PCB. The recommended inductance is between
0.5 and 1.0nH, with 0.75nH used on the Evaluation
Board. Depending on the application, more gain with
less linearity or more linearity with less gain may be
desired. Appropriate adjustment of the ground induc-
tance can accomplish these objectives. Minimizing the
ground inductance will maximize the gain at the
expense of linearity while increasing the ground induc-
tance will increase the linearity at the expense of gain.
It is important to remember that the pin 7 ground induc-
tance affects the performance of both LNAs, while the
pin 2 ground inductance affects only the 1900MHz
LNA.
EN1
GND
GND
VCC
EN2
GND
VCC
GND
Mode
Power Down
1900MHz LNA On
900MHz LNA On
900MHz LNA
The 900MHz LNA is a single-stage, common emitter
amplifier. Since the input pin contains a DC bias, an AC
coupling capacitor is required at this pin. An external
bias inductor from the output pin (RF OUT1) to VCC
provides DC biasing for the amplifier transistor and
assists in matching the output impedance to the next
receiver stage. A capacitor having a good RF bypass
characteristic at the frequency of operation should be
placed as close as possible to the supply voltage side
of the bias inductor; a low frequency bypass capacitor
should also be included. The EN1 pin supplies VCC to
the bias circuits of the LNA and should also be effec-
tively bypassed with both low and high frequency
capacitors.
4-202
Rev B2 010129
Preliminary
RF2363
Application Schematic (GSM/DCS)
EN1
EN2
10 nF
100 pF
47 pF
10 nF
10 nF
47 pF
1 k
Ω
3.9 nH
22 nF
5
6
7
8
4
3
2
1
VCC
3.3 nH
RF IN2
RF IN1
RF OUT2
RF OUT1
1 pF
4
22 nF
2 pF
12 nH
VCC
Note orientation of
package in this schematic.
100 pF
10 nF
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P2
P1
1
1
2
3
P2-1
VCC
GND
P1-1
EN2
GND
EN1
VCC
2
CON2
P1-3
P1-4
Note orientation of
package in this schematic.
4
CON4
EN1
EN2
C9
10 nF
C10
100 pF
C7
47 pF
C8
10 nF
C12
C11
47 pF
R1
1 k
L1
3.9 nH
U1
10 nF
Ω
VCC
5
6
7
8
4
3
2
1
L2
3.3 nH
C6
1 pF
C1
22 nF
50 Ω µstrip
50 Ω µstrip
50 Ω µstrip
J3
RF IN2
J2
RF OUT2
0.75 nH
0.75 nH
50 Ω µstrip
J4
RF IN1
J1
RF OUT1
C2
22 nF
C5
2 pF
L3
12 nH
VCC
Notes:
Ground traces on pins 2 and 7 are equivalent to a small
amount of inductance (-1 nH). The dimensions of these
lines are as follows.
C3
100 pF
C4
10 nF
Pin 2: L = 56 mils, W = 15 mils, H = 31 mils
Pin 7: L = 56 mils, W = 15 mils, H = 31 mils
Dielectric is FR-4
Rev B2 010129
4-203
Preliminary
RF2363
Evaluation Board Layout
Board Size 1.0" x 1.0"
Board Thickness 0.031”, Board Material FR-4
4
4-204
Rev B2 010129
Preliminary
RF2363
Gain versus Frequency
900 MHz LNA
Gain versus Frequency
1900 MHz LNA
19.0
18.8
18.6
18.4
18.2
18.0
17.8
17.6
23.0
22.5
22.0
21.5
21.0
20.5
20.0
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
4
925.0
930.0
935.0
940.0
945.0
950.0
955.0
960.0
960.0
960.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
Noise Figure versus Frequency
900 MHz LNA
Noise Figure versus Frequency
1900 MHz LNA
1.5
1.4
1.3
1.2
1.1
1.0
2.0
2.8V
3.2V
2.8V
3.2V
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
925.0
930.0
935.0
940.0
945.0
950.0
955.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
Input 1 dB Compression Point versus Frequency
900 MHz LNA
Input 1 dB Compression Point versus Frequency
1900 MHz LNA
0.0
-1.0
-6.0
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
-40°C, 2.8V
-40°C, 3.2V
-7.0
+25°C, 2.8V
+25°C, 3.2V
-2.0
-8.0
-9.0
+85°C, 2.8V
+85°C, 3.2V
-3.0
-4.0
-5.0
-10.0
-11.0
-12.0
-13.0
-14.0
-15.0
-16.0
-17.0
-18.0
-6.0
-7.0
-8.0
-9.0
-10.0
-11.0
-12.0
-13.0
-14.0
-15.0
925.0
930.0
935.0
940.0
945.0
950.0
955.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
Rev B2 010129
4-205
Preliminary
RF2363
Output 3rd Order Intercept Point versus Frequency
900 MHz LNA
Output 3rd Order Intercept Point versus Frequency
1900 MHz LNA
32.0
31.0
30.0
29.0
28.0
27.0
26.0
25.0
24.0
23.0
22.0
21.0
20.0
19.0
18.0
30.0
29.0
28.0
27.0
26.0
25.0
24.0
23.0
22.0
21.0
20.0
19.0
18.0
17.0
16.0
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
-40°C, 2.8V
-40°C, 3.2V
+25°C, 2.8V
+25°C, 3.2V
+85°C, 2.8V
+85°C, 3.2V
4
925.0
930.0
935.0
940.0
945.0
950.0
955.0
960.0
1800.0 1810.0 1820.0 1830.0 1840.0 1850.0 1860.0 1870.0 1880.0 1890.0
Frequency (MHz)
Frequency (MHz)
Current versus Supply Voltage
900 MHz LNA
Current versus Supply Voltage
1900 MHz LNA
12.0
11.0
10.0
9.0
14.0
900 LNA, -40°C
900 LNA, +25°C
900 LNA, +85°C
1900 LNA, -40°C
1900 LNA, +25°C
1900 LNA, +85°C
13.0
12.0
11.0
10.0
9.0
8.0
7.0
6.0
8.0
5.0
7.0
4.0
6.0
3.0
5.0
2.0
4.0
2.5
2.7
2.9
3.1
3.3
3.5
2.5
2.7
2.9
3.1
3.3
3.5
Supply Voltage (VDC
)
Supply Voltage (VDC)
4-206
Rev B2 010129
Preliminary
RF2363
900MHz LNA
Swp Max
2.5GHz
Input impedance
6
.
0
Output impedance
0
.
4
950 MHz
4
950 MHz
0.5 MHz
Swp Min
0.5GHz
1900MHz LNA
Swp Max
2.5GHz
Input impedance
6
.
0
Output impedance
0
.
4
1850 MHz
1850 MHz
0.5 MHz
Swp Min
0.5GHz
Rev B2 010129
4-207
Preliminary
RF2363
4
4-208
Rev B2 010129
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