RF2361PCBA-D [RFMD]
3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER; 3V低噪声放大器/ 3V PA驱动放大器
| 型号： | RF2361PCBA-D |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 3V LOW NOISE AMPLIFIER/ 3V PA DRIVER AMPLIFIER |
| 文件： | 总10页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF2361
3V LOW NOISE AMPLIFIER/
3V PA DRIVER AMPLIFIER
4
Typical Applications
• TDMA/CDMA/FM Cellular PCS LNA
• Low Noise Transmit Driver Amplifier
• General Purpose Amplification
• Commercial and Consumer Systems
Product Description
4
1.60
+ 0.01
0.15
0.05
The RF2361 is a low noise amplifier with a very high
dynamic range designed for digital cellular applications.
The device functions as an outstanding front end low
noise amplifier or power amplifier driver amplifier in the
transmit chain of digital subscriber units where low trans-
mit noise power is a concern. When used as an LNA, the
bias current can be set externally. When used as a PA
driver, the IC can operate directly from a single cell Li-ion
battery and includes a power down feature that can be
used to completely turn off the device. The IC is featured
in a standard SOT 5-lead plastic package.
0.400
1
2.90
+ 0.10
0.950
2.80
+ 0.20
1.44
1.04
3° MAX
0° MIN
Dimensions in mm.
0.127
0.45
+ 0.10
Optimum Technology Matching® Applied
Package Style: SOT 5-Lead
Si BJT
GaAs HBT
GaAs MESFET
!
Si Bi-CMOS
SiGe HBT
Si CMOS
Features
• Low Noise and High Intercept Point
• Adjustable Bias Current
• Power Down Control
RF IN
GND1
VPD
1
5
4
GND2
• Single 2.5V to 6.0V Power Supply
• 150MHz to 2500MHz Operation
• Extremely Small SOT 5-Lead Package
2
3
RF OUT
Ordering Information
RF2361
3V Low Noise Amplifier/ 3V PA Driver Amplifier
RF2361 PCBA-D Fully Assembled Evaluation Board (Driver)
RF2361 PCBA-L Fully Assembled Evaluation Board (LNA)
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Functional Block Diagram
Rev A7 001201
4-183
RF2361
Absolute Maximum Ratings
Parameter
Rating
-0.5 to +8.0
Unit
Caution! ESD sensitive device.
Supply Voltage, V
V
CC
DC
Power Down Voltage, V
Input RF Level
Operating Ambient Temperature
Storage Temperature
<V
CC
V
PD
DC
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
+10
-40 to +85
-40 to +150
dBm
°C
°C
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Overall
RF Frequency Range
4
150 to 2500
MHz
Schematic per LNA Application;
Low Noise Amplifier
881MHz Performance
T=25°C, RF=881MHz, V =2.8V,
PD
R1=1kΩ
Gain
19.5
19.5
20
20
dB
dB
V
V
V
V
V
V
=3.0V, I =7.6mA
CC
CC
CC
CC
CC
CC
CC
=2.7V, I =7.5mA
CC
Noise Figure
Input IP3
1.4
1.6
1.6
dB
=3.0V, I =7.6mA
CC
1.4
dB
=2.7V, I =7.5mA
CC
+6.0
+5.5
dBm
dBm
=3.0V, I =7.6mA
CC
=2.7V, I =7.5mA
CC
Schematic per LNA Application;
Low Noise Amplifier
1950MHz Performance
T=25°C, RF=1950MHz, V =2.8V,
PD
R1=1kΩ
Gain
12.5
12.5
13
13
dB
dB
V
V
V
V
V
V
=3.0V, I =6.4mA
CC
CC
CC
CC
CC
CC
CC
=2.7V, I =6.3mA
CC
Noise Figure
Input IP3
1.3
1.5
1.5
dB
=3.0V, I =6.4mA
CC
1.3
dB
=2.7V, I =6.3mA
CC
+16.5
+16.0
dBm
dBm
=3.0V, I =6.4mA
CC
=2.7V, I =6.3mA
CC
Schematic per Driver Amplifier Application;
T=25°C, RF=836MHz, V =2.8V
Driver Amplifier
836MHz Performance
Gain
PD
19.5
19.5
19.5
25
20.5
20.5
20.5
+32.0
+29.0
+27.8
1.9
21.5
21.5
21.5
35
dB
dB
V
V
V
V
V
V
V
V
V
V
V
V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
dB
Output IP3
dBm
dBm
dBm
dB
Noise Figure
Reverse Isolation
2.0
2.0
2.0
1.85
1.8
dB
dB
25
dB
25
dB
25
dB
Input VSWR
Output VSWR
1.8:1
1.25:1
2.0:1
2.0:1
Using External LC network used on evalua-
tion board.
P
13
12
14.4
12.5
11.5
dBm
dBm
dBm
V
V
V
=3.5V
=3.0V
=2.7V
1dB
CC
CC
CC
10.5
4-184
Rev A7 001201
RF2361
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T = 25 °C
Power Supply
Voltage (V
)
2.5 to 6.0
2.8
V
V
CC
Voltage (V
)
2.7
2.9
27
PD
Current Consumption -
Driver Amplifier
12.5
21.5
mA
V
=3.5V; V =2.8V; V +V
- Current
CC
CC
PD
PD
Consumption from V is 2.0mA Typ. @
PD
V
V
V
V
=2.8V and 3.0mA Max @ V =2.9 V
PD
PD
CC
CC
CC
18
19
20
23
22
29
10
mA
mA
µA
=3.5V; V =2.7V; V + V
PD PD
CC
CC
=3.5V; V =2.9V; V + V
PD
PD
Power Down
=3.5V; V ≤ 0.9V
PD
Schematic per Driver Amplifier Application;
T=25°C, RF=1880MHz, V =2.8V
Driver Amplifier
1880MHz Performance
Gain
4
PD
13.0
13.0
13.0
27
14.0
14.0
14.0
+35.0
+31.0
+28.8
1.85
1.8
14.5
14.5
14.5
38
dB
dB
V
V
V
V
V
V
V
V
V
V
V
V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
=3.5V
=3.0V
=2.7V
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
dB
Output IP3
dBm
dBm
dBm
dB
Noise Figure
Reverse Isolation
2.0
2.0
2.0
dB
1.75
19
dB
dB
19
dB
19
dB
Input VSWR
Output VSWR
1.6:1
1.6:1
2.0:1
2.0:1
Using External LC network used on evalua-
tion board.
P
14
13
12
15.6
14.1
13.1
dBm
dBm
dBm
V
V
V
=3.5V
=3.0V
=2.7V
1dB
CC
CC
CC
T = 25 °C
Power Supply
Voltage (V
)
2.5 to 6.0
2.8
V
V
CC
Voltage (V
)
2.7
2.9
PD
Current Consumption -
Driver Amplifier
11.5
19.5
25.5
mA
V
=3.5V; V =2.8V; V +V
- Current
CC
CC
PD
PD
Consumption from V is 2.0mA Typ.@
PD
V
V
V
V
=2.8V and 3.0mA Max @ V =2.9 V
PD
PD
CC
CC
CC
16
18
18
20
27
10
mA
mA
µA
=3.5V; V =2.7V; V + V
PD PD
CC
CC
20.5
=3.5V; V =2.9V; V + V
PD PD
Power Down
=3.5V; V ≤ 0.9V
PD
Rev A7 001201
4-185
RF2361
Pin
1
Function Description
Interface Schematic
RF input pin. This pin is DC coupled and matched to 50Ω at 836 MHz.
RF IN
To Bias
Circuit
RF OUT
RF IN
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
2
3
GND1
VPD
For low noise amplifier applications, this pin is used to control the bias
current. See plots for bias current settings. An external resistor (R1)
PD
can be used to set the bias current for any V voltage.
PD
For driver amplifier applications, this is the Power Down pin for the IC.
4
V
=2.8V +/- 0.1V is required for proper operation. V < 0.9V turns
PD
PD
off the Part. External RF bypassing is required. The trace length
between the pin and the bypass capacitors should be minimized. The
ground side of the bypass capacitors should connect immediately to
ground plane. Nominal current required for V =2.8V is 2.0mA typical
PD
and 3.0mA Max (@ V =2.9V).
PD
Amplifier Output pin. This pin is an open-collector output. It must be
4
5
RF OUT
GND2
biased to either V or pin 4 through a choke or matching inductor.
CC
This pin is typically matched to 50Ω with a shunt bias/matching induc-
tor and series blocking/matching capacitor. Refer to application sche-
matics.
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
4-186
Rev A7 001201
RF2361
Application Schematic:
Low Noise Amplifier ~881MHz Operation
22 nF
J1
1
2
3
5
RF IN
2 pF
1k
Ω
J2
RF OUT
VPD
4
10 nF
100 pF
12 nH
4
VCC
100 pF
10 nF
Application Schematic:
Low Noise Amplifier ~1950MHz Operation
22 nF
J1
1
2
3
5
RF IN
1 pF
1k
Ω
J2
RF OUT
VPD
4
10 nF
100 pF
3.3 nH
VCC
100 pF
10 nF
Rev A7 001201
4-187
RF2361
Application Schematic:
Driver Amplifier ~836MHz Operation
22 nF
J1
1
2
3
5
RF IN
2 pF
0
Ω
J2
RF OUT
VPD
4
10 nF
100 pF
12 nH
4
VCC
100 pF
10 nF
Application Schematic:
Driver Amplifier ~1880MHz Operation
22 nF
J1
1
2
3
5
RF IN
1 pF
0
Ω
J2
RF OUT
VPD
4
10 nF
100 pF
3.3 nH
VCC
100 pF
10 nF
4-188
Rev A7 001201
RF2361
Evaluation Board Schematic:
Low Noise Amplifier ~881MHz Operation
(Download Bill of Materials from www.rfmd.com.)
P1
P1-1
VPD
GND
VCC
1
2
3
C7
4.7
µ
F
4
C3
22 nF
50 Ω µstrip
J1
RF IN
1
2
3
5
4
C4
2 pF
R1
1k
Ω
50 Ω µstrip
50 Ω µstrip
J2
RF OUT
VPD
C1
10 nF
C2
220 pF
L1
12 nH
2361410 Rev-
VCC
C5
C6
220 pF
10 nF
Evaluation Board Schematic:
Driver Amplifier ~836MHz Operation
P1
1
2
3
P1-1
VPD
GND
VCC
C7
4.7
µ
F
C3
22 nF
50 Ω µstrip
J1
1
2
3
5
4
RF IN
C4
2 pF
R1
0
Ω
50 Ω µstrip
50 Ω µstrip
J2
RF OUT
VPD
C1
10 nF
C2
220 pF
L1
12 nH
2361400 Rev-
VCC
C5
C6
220 pF
10 nF
Rev A7 001201
4-189
RF2361
Evaluation Board Layout - 900MHz Driver
Board Size 0.948” x 1.063”
Board Thickness 0.031”; Board Material FR-4
4
Evaluation Board Layout - 900MHz LNA
4-190
Rev A7 001201
RF2361
Driver Amp 836 MHz
CC versus VPD
Driver Amp 836 MHz
Gain versus VPD
I
26.0
25.5
25.0
24.5
24.0
23.5
23.0
22.5
22.0
21.5
21.0
20.5
20.0
19.5
19.0
20.92
20.90
20.88
20.86
20.84
20.82
20.80
20.78
20.76
20.74
20.72
2.7V Icc (mA)
3.0V Icc (mA)
3.3V Icc (mA)
3.6V Icc (mA)
2.7V Gain (dB)
3.0V Gain (dB)
3.3V Gain (dB)
3.6V Gain (dB)
4
2.7
2.8
2.9
3.0
2.70
2.80
2.90
3.00
VPD
VPD
Driver Amp 836 MHz
OIP3 versus VPD
Driver Amp 836 MHz
OUT 1dB versus VPD
P
33.0
32.0
31.0
30.0
29.0
28.0
27.0
15.0
14.5
14.0
13.5
13.0
12.5
12.0
11.5
11.0
2.7V OIP3 (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
2.7V P 1dB (dBm)
3.0V P 1dB (dBm)
3.3V P 1dB (dBm)
3.6V P 1dB (dBm)
2.7
2.8
2.9
3.0
2.7
2.8
2.9
3.0
VPD
VPD
Driver Amp 836 MHz
Noise Figure versus VPD
2.05
2.00
1.95
1.90
1.85
1.80
1.75
1.70
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
2.70
2.80
2.90
3.00
VPD
Rev A7 001201
4-191
RF2361
Low Noise Amplifier 881 MHz
Gain versus ICC
Low Noise Amplifier 881 MHz
OIP3 versus ICC
19.95
19.90
19.85
19.80
19.75
19.70
19.65
19.60
19.55
29.0
28.5
28.0
27.5
27.0
26.5
26.0
25.5
25.0
24.5
24.0
2.7V Gain (dB)
2.7V OIP3 (dBm)
3.0V OIP3 (dBm)
3.3V OIP3 (dBm)
3.6V OIP3 (dBm)
3.0V Gain (dB)
3.3V Gain (dB)
3.6V Gain (dB)
4
6.00
6.50
7.00
7.50
8.00
ICC
8.50
9.00
9.50
10.00
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
ICC (mA)
Low Noise Amplifier 881 MHz
IIP3 versus ICC
Low Noise Amplifier 881 MHz
OUT 1dB versus ICC
P
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
13.5
13.0
12.5
12.0
11.5
11.0
10.5
10.0
9.5
2.7V IIP3 (dBm)
3.0V IIP3 (dBm)
3.3V IIP3 (dBm)
3.6V IIP3 (dBm)
2.7V Pout 1dB (dBm)
3.0V Pout 1dB (dBm)
3.3V Pout 1dB (dBm)
3.6V Pout 1dB (dBm)
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
ICC (mA)
ICC (mA)
Low Noise Amplifier 881 MHz
Noise Figure versus ICC
1.42
1.41
1.40
1.39
1.38
1.37
1.36
1.35
1.34
1.33
2.7V NF (dB)
3.0V NF (dB)
3.3V NF (dB)
3.6V NF (dB)
6.00
6.50
7.00
7.50
8.00
ICC
8.50
9.00
9.50
10.00
4-192
Rev A7 001201
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