ATC100A120JT [RFMD]
280W GaN WIDEBAND PULSED POWER; 280W氮化镓WIDEBAND脉冲功率
| 型号： | ATC100A120JT |
| 厂家： | 
RF MICRO DEVICES |
| 描述： | 280W GaN WIDEBAND PULSED POWER |
| 文件： | 总11页 (文件大小：923K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF3928280W
GaN WIDE-
BAND PULSED
POWER AMPLI-
FIER
RF3928
280W GaN WIDEBAND PULSED POWER
AMPLIFIER
Package: Hermetic 2-Pin, Flanged Ceramic
Features
Wideband Operation 2.8GHz to
3.4GHz
RF IN
VG
Pin 1 (CUT)
RF OUT
VD
Pin 2
Advanced GaN HEMT Technology
Advanced Heat-Sink Technology
Supports Multiple Pulse
Conditions
GND
BASE
10% to 20% Duty Cycle
100s to 500s Pulse Width
Integrated Matching
Components for High Terminal
Impedances
Functional Block Diagram
50V Operation Typical
Performance
Product Description
Pulsed Output Power 280W
Small Signal Gain 12dB
Drain Efficiency 52%
-40°C to 85°C Operating
Temperature
The RF3928 is a 50V 280W high power discrete amplifier designed for S-Band
pulsed radar, Air Traffic Control and Surveillance and general purpose broadband
amplifier applications. Using an advanced high power density Gallium Nitride (GaN)
semiconductor process, these high-performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single pack-
age. The RF3928 is a matched GaN transistor packaged in a hermetic, flanged
ceramic package. This package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of simple, optimized matching networks
external to the package that provide wide band gain and power performance in a
single amplifier.
Applications
Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
Ordering Information
RF3928S2
2-Piece sample bag
RF3928SB
5-Piece bag
RF3928SQ
RF3928SR
RF3928TR13
RF3928PCBA-410
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 2.8GHz to 3.4GHz; 50V
operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
1 of 11
RF3928
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
Unit
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Drain Source Voltage
150
-8 to +2
155
V
V
Gate Source Voltage
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Gate Current (I )
mA
V
G
Operational Voltage
50
Ruggedness (VSWR)
3:1
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Storage Temperature Range
-55 to +125
-40 to +85
°C
°C
Operating Temperature Range
(T )
L
Operating Junction Temperature
250
°C
(T )
J
Human Body Model
Class 1A
Hours
MTTF (T < 200°C)
3.0E + 06
1.4E + 05
J
MTTF (T < 250°C)
J
Thermal Resistance, Rth
(junction to case)
T = 85°C, DC bias only
0.90
0.18
°C/W
C
T = 85°C, 100s pulse, 10% duty
C
cycle
0.25
T = 85°C, 500s pulse, 10% duty
C
cycle
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: P
< (T – T )/R J - C and T = T
DISS
J C TH C CASE
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Recommended Operating
Condition
Drain Voltage (V
)
50
-2
V
V
DSQ
Gate Voltage (V
)
-8
-3
GSQ
Drain Bias Current
440
mA
Frequency of Operation
2800
3400
MHz
DC Functional Test
I
– Gate Leakage
2
2
mA
mA
V
V
V
V
V
= -8V, V = 0V
D
G (OFF)
D (OFF)
G
G
D
G
I
– Drain Leakage
= -8V, V = 50V
D
V
V
(th) – Threshold Voltage
-3.4
= 50V, I = 20mA
D
GS (TH)
– Drain Voltage at high current
0.22
V
= 0V, I = 1.5A
D
DS
[1,2]
RF Functional Test
Small Signal Gain
Power Gain
13.6
10.5
dB
dB
dB
F = 2800MHz, Pin =30dBm
F = 2800MHz, Pin = 44dBm
F = 2800MHz, Pin = 30dBm
10
Input Return Loss
-5.5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
2 of 11
DS120508
RF3928
Specification
Parameter
Unit
Condition
Min.
54
Typ.
54.6
50
Max.
-5.5
Output Power
dBm
%
F = 2800MHz, Pin = 44dBm
Drain Efficiency
Small Signal Gain
Power Gain
45
14.2
10.5
dB
dB
dB
dBm
%
F = 3100MHz, Pin = 30dBm
F = 3100MHz, Pin = 44dBm
F = 3100MHz, Pin = 30dBm
F = 3100MHz, Pin = 44dBm
10
Input Return Loss
Output Power
54
45
54.5
52
Drain Efficiency
Small Signal Gain
Power Gain
12.7
10.5
dB
dB
dB
dBm
%
F = 3400MHz, Pin = 30dBm
F = 3400MHz, Pin = 44dBm
F = 3400MHz, Pin = 30dBm
F = 3400MHz, Pin = 44dBm
10
Input Return Loss
Output Power
-5.5
54
45
54.3
56
Drain Efficiency
RF Typical Performance
Frequency Range
Small Signal Gain
Power Gain
[1,2]
2800
3400
MHz
dB
12
10
F = 3100MHz, Pin = 30dBm
dB
P
= 54dBm
OUT
Gain Variation with Temperature
-0.015
dB/°C
dBm
W
At peak output power
Peak output power
Peak output power
At peak output power
Output Power (P
)
54.5
280
52
SAT
Drain Efficiency
%
[1] Test Conditions: Pulsed Operation, PW = 100s, DC = 10%, V = 50V, I = 440mA, T = 25ºC
DS
DQ
[2] Performance in a standard tuned test fixture
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
3 of 11
RF3928
Typical Performance in Standard Fixed Tuned Test Fixture over Temperature
(Pulsed at Center Band Frequency)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
4 of 11
DS120508
RF3928
Typical Performance in Standard Fixed-tuned Test Fixture (T = 25°C, Unless
Noted)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
5 of 11
RF3928
PulseꢀPowerꢀDissipationꢀDeꢁratingꢀCurve
(BasedꢀonꢀMaximumꢀpackageꢀtemperatureꢀandꢀRth)
1200
1000
800
600
400
200
0
500ꢀSꢁPulseꢁWidth,ꢁ10%ꢁDutyꢁCycle
100ꢀSꢁPulseꢁWidth,ꢁ10%ꢁDutyꢁCycle
0
20
40
60
80
100
120
140
MaximumꢀCaseꢀTemperatureꢀ(°C)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
6 of 11
DS120508
RF3928
Package Drawing
(All Dimensions in mm)
Pin Names and Descriptions
Pin
1
Name
VG
Description
Gate – VG RF Input
Drain – VD RF Output
Source – Ground Base
2
3
VD
GND
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
7 of 11
RF3928
Bias Instruction for RF3928 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -6V to VG.
4. Apply 50V to VD.
5. Increase VG until drain current reaches 440mA or desired bias point.
6. Turn on the RF input.
IMPORTANT NOTE: Depletion mode device, when biasing the device VG must be applied BEFORE VD. When removing bias VD
must be removed BEFORE VG is removed. Failure to follow sequencing will cause the device to fail.
NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer
of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recom-
mended a small amount of thermal grease is applied to the underside of the device package. Even application and removal of
excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be
bolted to the chassis and input and output leads soldered to the circuit board.
Vg
Vd
RFIN
RFOUT
RF3928
2.8 – 3.4GHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
8 of 11
DS120508
RF3928
Evaluation Board Schematic
VDRAIN
+
C19
C18
VGATE
L21
L20
L23
C7
C8
+
L22
C14
R3
R2
R1
C5
C17
C15
C16
C6
C4
C3
C2
C12
C13
L1
J2
RF OUT
50 strip
50 strip
C11
J1
RF IN
C10
RF3928
C1
C9
Evaluation Board Bill of Materials
Component
Value
10
0
51
22pF
Manufacturer
Panasonic
Panasonic
Panasonic
ATC
Part Number
ERJ-8GEYJ100V
ERJ-3GEY0R00
ERJ-8GEYJ510
ATC100A220JT
ATC100A120JT
R1
R2
R3
C1,C11
C2, C14
C5, C16
C6, C15
C7
12pF
ATC
1000pF
10000pF
120
10F
Novacap
TDK
0805G102M101NT
C2012X7R2A103M
ERJ-6GEYJ120V
EEA-FC1E100
Panasonic
Panasonic
ATC
C8, C18
C9
0.7pF
ATC100A0R7BT
ATC100A0R2BT
ATC100B620JT
0807SQ-22N_LC
28F0181-1SR-10
35F0121-1SR-10
9337CKE100M
C10
0.2pF
ATC
C17
62pF
ATC
L1
22nH
Coilcraft
Steward
Steward
Illinois Capacitor
L20, L21
L22, L23
C19
115, 10A
75, 10A
330F
C3, C4, C7, C12, C13
NOT POPULATED
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
9 of 11
RF3928
Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source ()
Z Load ()
2800
3000
3200
3400
60.4 – j0.5
42.1 – j30.5
51.9 – j13.5
44.1 – j16.5
38.3 – j16.7
33.8 – j25.7
29.5 – j8.9
17.0 – j9.0
NOTE: Device impedances reported are the measured evaluation board impedances chosen for a trade off of peak power, peak efficiency and
gain performance across the entire frequency bandwidth.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
10 of 11
DS120508
RF3928
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement pro-
cess, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS
.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recom-
mended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance.
The user may choose alternate conditions for biasing this device based on performance trade off.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal charac-
teristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or
below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the
thermal resistance from ambient to the back of the package including heatsinking systems and air flow mecha-
nisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
DS120508
11 of 11
相关型号：
©2020 ICPDF网 联系我们和版权申明