ATC100A220GT500XT [NXP]
RF LDMOS Wideband Integrated Power Amplifier;
| 型号： | ATC100A220GT500XT |
| 厂家： | 
NXP |
| 描述： | RF LDMOS Wideband Integrated Power Amplifier |
| 文件： | 总17页 (文件大小：1189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MHV5IC1810N
Rev. 1, 3/2011
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifier
The MHV5IC1810N wideband integrated circuit is designed with on--chip
matching that makes it usable from 1805 to 1990 MHz. This multi--stage
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
MHV5IC1810NR2
1805--1990 MHz, 5 W AVG., 28 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
Final Application
•
Typical Two--Tone Performance: VDD = 28 Volts, IDQ1 = 120 mA, IDQ2
90 mA, Pout = 5 Watts Avg., Full Frequency Band (1805--1880 MHz or
1930--1990 MHz)
=
Power Gain — 29 dB
Power Added Efficiency — 29%
IMD — --34 dBc
Driver Application
16
•
Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 105 mA, IDQ2
95 mA, Pout = 35 dBm, Full Frequency Band (1805--1880 MHz or
1930--1990 MHz)
=
1
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = --67 dBc
Spectral Regrowth @ 600 kHz Offset = --76 dBc
EVM — 1.1% rms
CASE 978--03
PFP--16
PLASTIC
•
•
Capable of Handling 3:1 VSWR, @ 28 Vdc, 1990 MHz, 10 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 W CW
Pout
Features
.
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Parameters
•
•
On--Chip Matching (50 Ohm Input, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
•
•
•
•
On--Chip Current Mirror gm Reference FET for Self Biasing Application (1)
Integrated ESD Protection
RoHS Compliant
In Tape and Reel. R2 Suffix = 1500 Units, 16 mm Tape Width, 13 inch Reel.
NC
1
2
3
4
NC
V
16
15
14
13
V
V
RD1
/RF
/RF
/RF
/RF
/RF
/RF
V
V
DS2
out
out
out
out
out
out
RD1
RG1
V
V
V
V
V
DS2
DS2
DS2
DS2
DS2
RG1
V
DS1
V
DS1
2 Stage IC
GND
5
6
7
8
12
11
10
9
RF
in
RF
V
/RF
DS2 out
in
V
V
GS1
NC
GS2
V
V
GS1
GS2
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1987.
© Freescale Semiconductor, Inc., 2006, 2011. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
--0.5, +65
--0.5, +12
--65 to +150
150
Unit
Vdc
Vdc
°C
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
V
DSS
V
GS
T
stg
T
J
°C
P
12
dBm
in
Table 2. Thermal Characteristics
(1)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
°C/W
JC
Final Application
(P = 10 W CW)
out
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 120 mA
= 90 mA
9.2
3.3
DQ1
DQ2
Driver Application
(P = 2.25 W CW)
out
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 120 mA
= 90 mA
10
3.5
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
0 (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Wideband 1930--1990 MHz Test Fixture, 50 ohm system) V = 28 Vdc, I
= 120 mA, I
= 90 mA,
DD
DQ1
DQ2
P
= 5 W Avg., f1 = 1990 MHz, f2 = 1990.1 MHz, Two--Tone Test
out
Power Gain
G
26.5
25
29
29
—
—
dB
%
ps
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
PAE
IMD
IRL
—
-- 3 4
-- 2 7
dBc
dB
—
-- 10
Typical Two--Tone Performances (In Freescale Test Fixture, 50 οhm system) V = 28 Vdc, I
= 120 mA, I
= 90 mA, P
=
out
DD
DQ1
DQ2
5 W Avg., 1805--1880 MHz
Power Gain
G
—
—
—
—
29
29
—
—
—
—
dB
%
ps
Power Added Efficiency
Intermodulation Distortion
Input Return Loss
PAE
IMD
IRL
-- 3 4
-- 1 5
dBc
dB
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 οhm system) V = 28 Vdc, I
= 105 mA, I
= 95 mA,
DD
DQ1
DQ2
P
= 3.2 W Avg., 1805--1880 MHz or 1930--1990 MHz EDGE Modulation
out
Power Gain
G
—
—
—
—
29
—
—
—
—
dB
% rms
dBc
ps
Error Vector Magnitude
EVM
SR1
SR2
1.1
-- 6 7
-- 7 6
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
dBc
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
A
Characteristic
Symbol
Min
Typ
Max
= 90 mA, P =
out
Unit
Typical CW Performances (In Freescale CW Test Fixture, 50 οhm system) V = 28 Vdc, I
= 120 mA, I
DD
DQ1
DQ2
2.25 W Avg., 1805--1990 MHz
Power Gain
G
—
—
—
29
19
—
—
—
dB
%
ps
Power Added Efficiency
Input Return Loss
PAE
IRL
-- 1 3
dB
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
3
1
2
3
4
5
6
7
8
NC
NC 16
Z10
Z9
Z8
V
V
V
DS2
15
14
13
12
11
10
RD1
C5
C9
C11
RG1
Z11
V
C13
Z5
C14
DS1
RF
OUTPUT
C10
Z3
Z4
Z6
Z7
RF
INPUT
C6
Z1
Z2
C12
C15
C2
V
GS1
Quiescent Current
Temperature Compensation
R1
C7
C3
V
9
NC
GS2
R2
C8
C4
Z1
0.120″ x 0.044″ Microstrip
0.257″ x 0.044″ Microstrip
0.130″ x 0.170″ Microstrip
0.067″ x 0.122″ Microstrip
0.127″ x 0.122″ Microstrip
0.355″ x 0.084″ Microstrip
Z7
Z8
Z9
Z10
Z11
0.273″ x 0.044″ Microstrip
0.917″ x 0.050″ Microstrip
0.304″ x 0.050″ Microstrip
0.710″ x 0.050″ Microstrip
1.296″ x 0.400″ Microstrip
Z2
Z3
Z4
Z5
Z6
PCB
Rogers 4350, 0.020″, ε = 3.50
r
Figure 3. MHV5IC1810NR2 Test Circuit Schematic — 1930--1990 MHz
Table 6. MHV5IC1810NR2 Test Circuit Component Designations and Values — 1930--1990 MHz
Part
Description
22 pF Chip Capacitor
Part Number
ATC100A220GT500XT
ATC100A8R2CT500XT
08055C103KAT
Manufacturer
ATC
C2
C3, C4, C5, C6
C7, C8, C9
C10, C11
C12, C13
C14, C15
R1, R2
8.2 pF Chip Capacitors
10 nF Chip Capacitors
6.8 μF Chip Capacitors
3.3 pF Chip Capacitors
0.5 pF Chip Capacitors
1 kΩ, 1/8 W Chip Resistors
ATC
AVX
TDK
ATC
ATC
Vishay
C4532X5R1H685MT
ATC100A3R3BT500XT
ATC100A0R5BT500XT
CRCW1K00FKEA
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
4
V
V
D1
D2
C11
C10
C5
C9
C13
C12
C14
C15
C2
C6
C3
C7
C4
MHV5IC1810N
Rev. 0
C8
R2
R1
V
V
GS2
GS1
Figure 4. MHV5IC1810NR2 Test Circuit Component Layout — 1930--1990 MHz
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — 1930--1990 MHz
35
34
33
32
31
30
-- 1 0
--15
--20
--25
--30
--35
IRL
V
= 28 Vdc, P = 5 W (Avg.)
out
DD
PAE
I
= 120 mA, I
= 90 mA
DQ1
DQ2
100 kHz Tone Spacing
G
ps
IMD
29
28
27
--40
--45
-- 5 0
1900
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 5. Two--Tone Wideband Performance
@ Pout = 5 Watts (Avg.)
35
30
25
20
15
10
0
G
ps
-- 1 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
IRL
V
= 28 Vdc, P = 20 dBm (Avg.)
out
DD
I
= 120 mA, I
= 90 mA
DQ1
DQ2
100 kHz Tone Spacing
IMD
-- 6 0
-- 7 0
5
0
PAE
1900
1920
1940
1960
1980
2000
f, FREQUENCY (MHz)
Figure 6. Two--Tone Wideband Performance
@ Pout = 20 dBm (Avg.)
32
-- 10
I
I
= 120 mA
= 140 mA
DQ1
DQ2
V
I
= 28 Vdc
= 120 mA, I
DD
3rd Order
-- 20
-- 30
-- 40
-- 50
-- 60
-- 70
-- 8 0
= 90 mA
31
30
29
28
27
DQ1
DQ2
f = 1960 MHz, 100 kHz Tone Spacing
I
I
= 120 mA
= 115 mA
DQ1
DQ2
5th Order
7th Order
I
I
= 120 mA
= 90 mA
DQ1
DQ2
I
I
= 60 mA
= 90 mA
I
I
= 120 mA
= 45 mA
DQ1
DQ2
DQ1
DQ2
I
I
= 120 mA
= 65 mA
DQ1
DQ2
V
= 28 Vdc
DD
26
25
Center Frequency = 1960 MHz
100 kHz Tone Spacing
1
10
, OUTPUT POWER (WATTS) PEP
100
0.1
1
10
100
P
P
, OUTPUT POWER (WATTS) PEP
out
out
Figure 7. Two--Tone Power Gain versus
Output Power
Figure 8. Intermodulation Distortion Products
versus Output Power
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS — 1930--1990 MHz
47
Ideal
P3dB = 42.5 dBm (17.78 W)
P1dB = 42 dBm (15.85 W)
45
43
41
39
37
Actual
V
= 28 Vdc
= 120 mA, I
DD
I
= 90 mA
DQ1
DQ2
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 1960 MHz
35
-- 2
0
2
4
6
8
10
P , INPUT POWER (dBm)
in
Figure 9. Pulse CW Output Power versus Input
Power
36
34
60
34
V
I
= 28 Vdc, I
= 90 mA, f = 1960 MHz
= 120 mA
DD
DQ1
-- 3 0 _C
32
30
28
26
24
22
20
18
16
14
12
10
DQ2
50
40
25_C
85_C
G
ps
T
= --30_C
25_C
C
32
30
28
26
24
32 V
28 V
30
20
24 V
85_C
I
I
= 120 mA
= 90 mA
16 V
DQ1
20 V
10
0
PAE
DQ2
f = 1960 MHz
V
= 12 V
DD
0
2
4
6
8
10 12 14 16 18 20 22 24
0.1
1
10
100
P
, OUTPUT POWER (WATTS) CW
P
, OUTPUT POWER (WATTS) CW
out
out
Figure 10. Power Gain and Power Added
Efficiency versus CW Output Power
Figure 11. Power Gain versus Output Power
33
V
= 28 Vdc, P = 1 W Avg., I
= 120 mA, I
= 90 mA
DD
out
DQ1
DQ2
Two--Tone Measurements, Center Frequency = 1960 MHz
32
31
T
= --30_C
25_C
C
30
29
28
27
26
85_C
1800
1850
1900
f, FREQUENCY (MHz)
1950
2000
Figure 12. Power Gain versus Frequency
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
7
TYPICAL CHARACTERISTICS — 1930--1990 MHz
-- 45
-- 50
10
8
50
40
30
-- 3 0 _C
T
EVM
= 85_C
C
T
= 85_C
C
25_C
25_C
-- 55
-- 60
-- 65
-- 70
-- 75
-- 80
-- 8 5
-- 3 0_C
-- 3 0 _C
6
25_C
SR @ 400 kHz
SR @ 600 kHz
4
2
0
20
10
0
V
I
I
= 28 Vdc
= 105 mA
= 90 mA
DD
DQ1
DQ2
V
I
= 28 Vdc
= 105 mA
= 90 mA
PAE
DD
85_C
DQ1
I
DQ2
f = 1960 MHz
EDGE Modulation
f = 1960 MHz
EDGE Modulation
1
0.1
10
100
0.1
1
10
100
P
, OUTPUT POWER (WATTS) AVG.
P
, OUTPUT POWER (WATTS) AVG.
out
out
Figure 13. EVM and Power Added Efficiency
versus Output Power
Figure 14. Spectral Regrowth at 400 and 600 kHz
versus Output Power
8
10
10
10
10
10
GSM TEST SIGNAL
2nd Stage
7
6
5
4
-- 1 0
-- 2 0
-- 3 0
Reference Power
VBW = 30 kHz
Sweep Time = 70 ms
VBW = 30 kHz
1st Stage
-- 4 0
-- 5 0
-- 6 0
-- 7 0
-- 8 0
-- 9 0
--100
400 kHz
400 kHz
90
100 110 120 130 140 150 160 170 180 190
600 kHz
600 kHz
T , JUNCTION TEMPERATURE (°C)
J
2
This above graph displays calculated MTTF in hours x ampere
drain current. Life tests at elevated temperatures have correlated to
-- 11 0
better than ±10% of the theoretical prediction for metal failure. Divide
2
Center 1.96 GHz
200 kHz
Span 2 MHz
MTTF factor by I for MTTF in a particular application.
D
Figure 15. MTTF Factor versus Junction Temperature
Figure 16. EDGE Spectrum
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
8
1
2
3
4
5
6
7
8
NC
NC 16
Z11
Z10
Z9
V
V
V
DS2
15
14
13
12
11
10
RD1
C5
C9
C11
RG1
Z12
V
C13
Z7
DS1
RF
OUTPUT
C10
Z3
Z4
Z5 Z6
Z8
RF
INPUT
C12
C6
Z1
Z2
C1
C2
V
GS1
Quiescent Current
Temperature Compensation
R1
C7
C3
V
9
NC
GS2
R2
C8
C4
Z1
0.120″ x 0.044″ Microstrip
0.257″ x 0.044″ Microstrip
0.130″ x 0.170″ Microstrip
0.070″ x 0.122″ Microstrip
0.125″ x 0.122″ Microstrip
0.095″ x 0.084″ Microstrip
0.260″ x 0.085″ Microstrip
Z8
Z9
Z10
Z11
Z12
0.273″ x 0.044″ Microstrip
0.917″ x 0.050″ Microstrip
0.304″ x 0.050″ Microstrip
0.710″ x 0.050″ Microstrip
1.296″ x 0.400″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
PCB
Rogers 4350, 0.020″, ε = 3.50
r
Figure 17. MHV5IC1810NR2 Test Circuit Schematic — 1805--1880 MHz
Table 7. MHV5IC1810NR2 Test Circuit Component Designations and Values — 1805--1880 MHz
Part
Description
0.8 pF Chip Capacitor
Part Number
ATC100A0R8BT500XT
ATC100A270GT500XT
ATC100A8R2CT500XT
08055C103KAT
Manufacturer
ATC
C1
C2
27 pF Chip Capacitor
8.2 pF Chip Capacitors
10 nF Chip Capacitors
6.8 μF Chip Capacitors
3.3 pF Chip Capacitors
1 kΩ, 1/8 W Chip Resistors
ATC
ATC
AVX
TDK
ATC
Vishay
C3, C4, C5, C6
C7, C8, C9
C10, C11
C12, C13
R1, R2
C4532X5R1H685MT
ATC100A3R3BT500XT
CRCW1K00FKEA
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
9
V
V
D1
D2
C11
C10
C5
C9
C2
C13
C6
C12
C1
C3
C7
C4
MHV5IC1810N
Rev. 0
C8
R2
R1
V
V
GS2
GS1
Figure 18. MHV5IC1810NR2 Test Circuit Component Layout — 1805--1880 MHz
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
10
TYPICAL CHARACTERISTICS — 1805--1880 MHz
12
10
60
50
-- 45
-- 50
25_C
T
EVM
= 85_C
C
25_C
-- 55
-- 60
-- 65
-- 70
-- 75
-- 80
-- 8 5
8
6
4
2
0
40
30
20
10
0
-- 3 0_C
25_C
T
= 85_C
C
SR @ 400 kHz
SR @ 600 kHz
PAE
V
I
I
= 28 Vdc
= 105 mA
= 90 mA
DD
DQ1
DQ2
V
I
I
= 28 Vdc
= 105 mA
= 90 mA
DD
DQ1
DQ2
-- 3 0 _C
85_C
f = 1840 MHz
EDGE Modulation
f = 1840 MHz
EDGE Modulation
-- 3 0 _C
1
10
, OUTPUT POWER (WATTS) AVG.
100
1
0.1
10
100
P
P
, OUTPUT POWER (WATTS) AVG.
out
out
Figure 19. Spectral Regrowth at 400 and 600 kHz
versus Output Power
Figure 20. Spectral Regrowth at 400 and 600 kHz
versus Output Power
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
11
Z = 50 Ω
o
f = 2000 MHz
Z
load
f = 1800 MHz
f = 2000 MHz
Z
in
f = 1800 MHz
V
= 28 Vdc, I
= 120 mA, I = 90 mA,P = 5 W Avg.
DQ2 out
DD
DQ1
f
Z
in
Z
load
MHz
Ω
Ω
1800
1820
1840
1860
1880
1900
1920
1940
1960
1980
2000
43.82 + j6.83
43.67 + j7.10
43.50 + j7.34
43.31 + j7.55
43.13 + j7.76
42.96 + j7.96
42.76 + j8.15
42.56 + j8.34
42.36 + j8.50
42.16 + j8.65
41.97 + j8.79
3.49 + j8.58
3.43 + j8.96
3.36 + j9.33
3.31 + j9.68
3.24 + j10.04
3.19 + j10.38
3.14 + j10.72
3.07 + j11.03
3.04 + j11.36
2.99 + j11.65
2.94 + j11.94
Z
in
=
Test circuit impedance as measured from
gate to ground.
Z
load
=
Test circuit impedance as measured
from drain to ground.
Output
Device
Matching
Network
Under Test
Z
Z
in
load
Figure 21. Series Equivalent Input and Load Impedance
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
12
PACKAGE DIMENSIONS
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
13
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
14
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
15
PRODUCT DOCUMENTATION
Refer to the following documents, Tools and software to aid your design process.
Application Notes
•
•
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
•
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
1
Mar. 2011
•
•
•
Figs. 3 and 17, Test Circuit Schematic, redrawn to reflect correct trace lengths and trace length
measurements, p. 4, 9
Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part
numbers, p. 4, 9
Added Product Documentation and Revision History, p. 16
MHV5IC1810NR2
RF Device Data
Freescale Semiconductor
16
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