RQJ0306FQDQATL-H [RENESAS]
Silicon P Channel MOS FET Power Switching; 硅P沟道MOS场效应管电源开关
| 型号： | RQJ0306FQDQATL-H |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel MOS FET Power Switching |
| 文件： | 总8页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
RQJ0306FQDQA
Silicon P Channel MOS FET
Power Switching
R07DS0298EJ0200
(Previous: REJ03G1719-0100)
Rev.2.00
Mar 28, 2011
Features
•
Low gate drive
DSS : –30 V and 2.5 V gate drive
V
•
•
•
Low drive current
High speed switching
Small traditional package (MPAK)
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK
)
3
D
3
2
G
1. Source
2. Gate
3. Drain
1
2
S
1
Notes: Marking is "FQ".
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
V
–30
+8 / –12
–3
V
A
Note1
Drain peak current
ID(pulse)
–12
A
Body - drain diode reverse drain current
Channel dissipation
IDR
3
A
Pch Note2
Tch
0.8
W
°C
°C
Channel temperature
Storage temperature
150
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, Duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm)
R07DS0298EJ0200 Rev.2.00
Mar 28, 2011
Page 1 of 7
RQJ0306FQDQA
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
Min
–30
+8
–12
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Gate to source leak current
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
Drain to source on state resistance
Forward transfer admittance
Input capacitance
ID = –10 mA, VGS = 0
IG = +100 μA, VDS = 0
IG = –100 μA, VDS = 0
VGS = +6 V, VDS = 0
—
—
V
—
—
V
—
+10
–10
–1
μA
μA
μA
V
IGSS
—
—
VGS = –10 V, VDS = 0
VDS = –30 V, VGS = 0
VDS = –10 V, ID = -1 mA
ID = –1.5 A, VGS = –4.5 V Note3
ID = –1.5 A, VGS = –2.5 V Note3
ID = –1.5 A, VDS = –10 V Note3
VDS = –10 V, VGS = 0,
f = 1 MHz
IDSS
—
—
VGS(off)
RDS(on)
RDS(on)
|yfs|
–0.4
—
—
–1.4
95
75
mΩ
mΩ
S
—
120
5.2
510
100
58
165
—
3.5
—
Ciss
Coss
Crss
td(on)
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output capacitance
—
—
Reverse transfer capacitance
Turn - on delay time
—
—
—
18
—
ID = –1.5 A
VGS = –4.5 V
RL = 6.7 Ω
Rg = 4.7 Ω
Rise time
tr
—
48
—
Turn - off delay time
td(off)
—
47
—
Fall time
tf
—
13
—
Total gate charge
Qg
—
4.8
0.8
1.8
–0.8
—
VDD = –10 V
V
GS = –4.5 V
Gate to Source charge
Gate to drain charge
Qgs
—
—
ID = –3.0 A
IF = –3.0 A, VGS = 0 Note3
Qgd
—
—
Body - drain diode forward voltage
Notes: 3. Pulse test
VDF
—
–1.2
R07DS0298EJ0200 Rev.2.00
Mar 28, 2011
Page 2 of 7
RQJ0306FQDQA
Preliminary
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
–100
–10
1
0.8
0.6
0.4
0.2
0
Ta = 25°C
1 Shot Pulse
100 μs
–1
–0.1
–0.01
Operation in this area
is limited by RDS(on)
0
25
50
75 100 125 150
–0.01
–1
–10
–100
–0.1
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Typical Transfer Characteristics (1)
Typical Output Characteristics
–10 V
–6 V
–10
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
–2.6 V
VDS = –10 V
Pulse Test
–2.8 V
–3.0 V
–2.4 V
–8
Pulse Test
Tc = 25°C
–2.2 V
–2.0 V
–6
–4
–2
0
–1.8 V
–1.6 V
Tc = 75°C
25°C
–1.4 V
–25°C
VGS = 0V
0
0
–1
–2
–3
–4
0
–2
–4
–6
–8
–10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
Typical Transfer Characteristics (2)
1.5
–1
Tc = 75°C
–1 mA
–0.1
ID = –10 mA
25°C
1.0
0.5
0
–25°C
–0.01
–0.001
–0.1 mA
VDS = –10 V
Pulse Test
VDS = –10 V
Pulse Test
–0.0001
0
–0.5 –1
–1.5 –2
–2.5 –3
–25
0
25
50 75 100 125 150
Case Temperature Tc (°C)
Gate to Source Voltage VGS (V)
R07DS0298EJ0200 Rev.2.00
Mar 28, 2011
Page 3 of 7
RQJ0306FQDQA
Preliminary
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–0.5
–0.4
–0.3
1
Pulse Test
Tc = 25°C
VGS = –2.5 V
–4.5 V
0.1
ID = –3.0 A
–2.0 A
–10 V
–0.2
–1.5 A
–1.0 A
–0.5 A
–0.1
0
Pulse Test
Tc = 25°C
0.01
0
–2
–4
–6
–8
–10
–0.1
–1
–10
–100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
Static Drain to Source on State Resistance
vs. Case Temperature (2)
0.14
0.25
ID = –3.0 A
0.12
ID = –3.0 A
0.2
–2.5 A
0.1
–2.0 A
–2.5 A
–2.0 A
0.15
–1.5 A
–1.0A
0.08
0.06
0.04
–1.5 A
–0.5A
–1.0A
0.1
0.05
0
–0.5A
Pulse Test
GS = –2.5 V
0.02
0
Pulse Test
GS = –4.5
V
V
V
–25
0
25 50
75 100 125 150
C)
–25
0
25 50 75 100 125 150
Case Temperature Tc (
°
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
Forward Transfer Admittance vs.
Drain Current
–10000
–1000
–100
–10
10
Pulse Test
VDS = –10 V
Pulse Test
VGS = 0 V
–25°C
V
DS = –30 V
25°C
Tc = 75°C
–1
–25
1
–0.1
0
25 50 75 100 125 150
1
10
Drain Current ID (A)
Case Temperature Tc (°C)
R07DS0298EJ0200 Rev.2.00
Mar 28, 2011
Page 4 of 7
RQJ0306FQDQA
Preliminary
Switching Characteristics
Dynamic Input Characteristics
0
–10
–20
0
1000
VDD = –10 V
–25 V
–2
–4
t
r
100
10
1
VDD = –10 V
–25 V
t
t
d(off)
d(on)
t
f
–30
–6
–8
VGS = –4.5 V, VDD = –10 V
Rg = 4.7 Ω, duty ≤ 1 %
Tc = 25°C
ID = –3 A
Tc = 25°C
–40
–10
–0.01
0
–0.1
2
4
6
8
10
–1
Drain Current ID (A)
Gate Charge Qg (nC)
Input Capacitance vs.
Gate to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
1000
100
950
900
Ciss
Coss
Crss
850
800
10
1
750
700
650
VDS = 0
f = 1MHz
VGS = 0 V
f = 1 MHz
–0 –5 –10 –15 –20 –25 –30
–10 –8 –6 –4 –2
0
2
4
6
8 10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
–0.6
–10
–8
VGS = 0
Pulse Test
Tc = 25°C
–0.5
–0.4
–0.3
–0.2
ID = –10 mA
–6
–10 V
–4.5 V
–2.5 V
–0 V
–4
–1 mA
–2
0
VGS = 2.5, 4.5, 10 V
0
–0.2 –0.4 –0.6 –0.8 –1.0 –1.2 –1.4
Source to Drain Voltage VSD (V)
–25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS0298EJ0200 Rev.2.00
Mar 28, 2011
Page 5 of 7
RQJ0306FQDQA
Preliminary
Switching Time Test Circuit
Switching Time Waveform
10%
Vout
Monitor
Vin
Vin Monitor
D.U.T.
Rg
RL
90%
90%
VDD
= –30 V
Vin
–10 V
90%
10%
10%
Vout
t
t
t
f
d(off)
d(on)
t
r
R07DS0298EJ0200 Rev.2.00
Mar 28, 2011
Page 6 of 7
RQJ0306FQDQA
Preliminary
Package Dimensions
Package Name
MPAK
JEITA Package Code
SC-59A
RENESAS Code
PLSP0003ZB-A
Previous Code
MASS[Typ.]
0.011g
MPAK(T) / MPAK(T)V
D
A
Q
c
e
E
HE
L
L
P
L
1
A
A
A3
b
Dimension in Millimeters
Min Nom Max
Reference
Symbol
x
S
A
M
e
A
A1
A2
A3
b
c
D
E
e
HE
L
L1
LP
x
b2
e1
I1
1.0
0
1.0
1.3
0.1
1.2
1.1
0.25
0.4
A
2
1
A
0.35
0.1
2.7
1.35
0.5
0.16 0.26
3.1
e1
1.5
0.95
2.8
1.65
A
S
2.2
3.0
b
0.35
0.15
0.25
0.75
0.55
0.65
0.05
0.55
I
1
c
1.95
0.3
b
2
1.05
A-A Section
Pattern of terminal position areas
Q
Ordering Information
Orderable Part Number
Quantity
Shipping Container
φ178 mm reel, 8 mm Emboss taping
RQJ0306FQDQATL-H
3000 pcs.
R07DS0298EJ0200 Rev.2.00
Mar 28, 2011
Page 7 of 7
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