RQJ0601DGDQS [RENESAS]
Silicon P Channel MOS FET Power Switching; 硅P沟道MOS场效应管电源开关
| 型号： | RQJ0601DGDQS |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel MOS FET Power Switching |
| 文件： | 总7页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RQJ0601DGDQS
Silicon P Channel MOS FET
Power Switching
REJ03G1266-0300
Rev.3.00
Jun 05, 2006
Features
•
Low on-resistance
RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.4 A)
Low drive current
High speed switching
•
•
•
4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R
)
2, 4
D
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
1 G
4
S
3
Note: Marking is “DG”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
–60
Unit
V
+10 / –20
–2.8
V
A
Note1
Drain peak current
ID (pulse)
–4.2
A
Body - drain diode reverse drain current
Channel dissipation
IDR
–2.8
A
Pch Note2
1.5
W
W
°C
°C
Note1
Channel dissipation
Pch (pulse)
Tch
5
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Rev.3.00 Jun 05, 2006 page 1 of 6
RQJ0601DGDQS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
Min
–60
+10
–20
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
ID = –10 mA, VGS = 0
—
—
V
IG = +100 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = +8 V, VDS = 0
—
—
V
—
+10
–10
–1
–2.0
155
210
—
µA
µA
µA
V
Gate to source leak current
IGSS
—
—
VGS = –16 V, VDS = 0
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
IDSS
—
—
VDS = –60 V, VGS = 0
VGS(off)
RDS(on)
RDS(on)
|yfs|
–1.0
—
—
VDS = –10 V, ID = –1 mA
ID = –1.4 A, VGS = –10 VNote3
ID = –1.4 A, VGS = –4.5 VNote3
ID = –1.4 A, VDS = –10 VNote3
124
150
4.1
590
75
mΩ
mΩ
S
—
Forward transfer admittance
Input capacitance
2.5
—
Ciss
Coss
Crss
td(on)
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = -10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
—
—
—
36
—
—
20
—
ID = –1 A, VGS = –10 V,
RL = 10 Ω, Rg = 4.7 Ω
tr
—
41
—
Turn - off delay time
Fall time
td(off)
—
43
—
tf
—
78
—
Total gate charge
Qg
—
9.6
1.3
1.5
-0.8
—
VDD = –10 V, VGS = –10 V,
ID = –2.8 A
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Qgs
—
—
Qgd
—
—
VDF
—
—
IF = –1.5 A, VGS = 0Note3
Rev.3.00 Jun 05, 2006 page 2 of 6
RQJ0601DGDQS
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
–100
–10
2.0
Operation in this area
is limited by RDS(on)
100
µs
1.5
1.0
0.5
0
–1
–0.1
Ta = 25°C
1 Shot Pulse
–0.01
–0.01
–0.1
–1
–10
–100
0
25
50
75
100 125 150
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
Typical Output Characteristics
–2.5
–2.5
–2.0
–1.5
–3 V
Pulse Test
Tc = 25
VDS = –10 V
Pulse Test
–2.7 V
°C
–10 V
–2.0
–1.5
–1.0
–0.5
0
–2.5 V
–1.0
–2.3 V
= 0 V
–0.5
0
25°C
Tc = 75°C
–25°C
V
GS
0
–0.5 –1 –1.5 –2 –2.5 –3 –3.5 –4
Gate to Source Voltage VGS (V)
0
–2
–4
–6
–8
–10
Drain to Source Voltage VDS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
Typical Transfer Characteristics (2)
–0.1
–0.01
–2.5
–2
VDS = –10 V
Pulse Test
Tc = 75°C
ID = –10 mA
–1.5
–1 mA
25°C
–0.001
–100 µA
–1
VDS = –10 V
Pulse Test
–25°C
–0.0001
–0.5
0
–0.5 –1 –1.5 –2 –2.5 –3
Gate to Source Voltage VGS (V)
–25
0
25 50
75 100 125 150
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 3 of 6
RQJ0601DGDQS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1
–0.8
–0.6
–0.4
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
VDS
=
–
4.5 V
–
10 V
0.1
–
0.2 A
–
1.5 A
1 A
0.5 A
–0.2
0
–
–
0.01
0
–5
–10
–15
–20
–0.1
–1
Drain Current ID (A)
–10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
300
250
Pulse Test
VGS = –4.5 V
Pulse Test
VGS = –10 V
ID = –1.5
A
250
200
200
150
100
50
–
1 A
–
0.5 A
–
0.2 A
150
100
ID = –0.2 A, –0.5 A, –1 A, –1.5 A
–25
0
25 50 75 100 125 150
–25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
Forward Transfer Admittance vs.
Drain Current
–1000
–100
10
–25°C
Pulse Test
VGS = 0 V
VDS = –60 V
25°C
1
Tc = 75°C
–10
–1
Pulse Test
–
VDS
=
10 V
0.1
–0.1
–25
0
25 50
75 100 125 150
–1.0
Drain Current ID (A)
–10.0
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 4 of 6
RQJ0601DGDQS
Switching Characteristics
Dynamic Input Characteristics
1000
100
0
0
VDD
= –10 V
–
–
–
–
20
40
60
80
–
–
–
–
4
t
f
VGS
–
25 V
50 V
t
8
d(off)
VDD
=
–
50 V
–
t
d(on)
VDS
12
16
20
–
25 V
VDD
VGS
=
=
–
10 V
10 V
10
1
t
r
–
Rg = 4.7 Ω
= 5 µs
Tc = 25°C
ID
=
–
2.8 A
Tc = 25°C
–10 V
P
W
–
20
–
100
–
0.01
–
0.1
–
1
–10
0
4
8
12
16
Drain Current ID (A)
Gate Charge Qg (nC)
Input Capacitance vs.
Gate to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
900
850
800
750
1000
100
10
Ciss
Coss
Crss
700
650
VDS = 0 V
f = 1 MHz
VGS = 0 V
f = 1 MHz
1
–0
–10 –8 –6 –4 –2
0
2
4
6
8
10
–10 –20 –30 –40 –50 –60
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
–2.
5
2
–
0.9
VGS = 0
–
10V
Pulse Test
Tc = 25°C
–
–
–
–
0.8
0.7
0.6
0.5
–
ID
= –1 A
–
–
1.5
–
5V
–
1
–
10 mA
0.5
–
–
0.4
0.3
VGS = 0 V, 5 V
0
–25
0
25 50 75 100 125 150
0
–
0.4
–
0.8
–
1.2
–
1.6
–2.0
Source Drain Voltage VSD (V)
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 5 of 6
RQJ0601DGDQS
Package Dimensions
Package Name
UPAK
JEITA Package Code
SC-62
RENESAS Code
PLZZ0004CA-A
Previous Code
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
4.5 0.1
1.8 Max
1.5 0.1
(1.5)
0.44 Max
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Ordering Information
Part Name
Quantity
Shipping Container
φ178 reel, 12 mm Emboss taping
RQJ0601DGDQSTL-E
1000 pcs.
Rev.3.00 Jun 05, 2006 page 6 of 6
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