RQJ0601DGDQS#H3 [RENESAS]
Pch Single Power MOSFET -60V -2.8A 155mohm UPAK/SC-62;
| 型号： | RQJ0601DGDQS#H3 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Pch Single Power MOSFET -60V -2.8A 155mohm UPAK/SC-62 |
| 文件： | 总9页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3.
4.
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
you or third parties arising from the use of these circuits, software, or information.
5.
When exporting the products or technology described in this document, you should comply with the applicable export control
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas
Electronics products or the technology described in this document for any purpose relating to military applications or use by
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations.
6.
7.
Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics
does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and
“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as
indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior
written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for
which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way
liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an
application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written
consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise
expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
8.
9.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas
Electronics.
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this
document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
RQJ0601DGDQS
Silicon P Channel MOS FET
Power Switching
REJ03G1266-0300
Rev.3.00
Jun 05, 2006
Features
•
Low on-resistance
RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.4 A)
Low drive current
High speed switching
•
•
•
4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK R
)
2, 4
D
1
2
3
1. Gate
2. Drain
3. Source
4. Drain
1 G
4
S
3
Note: Marking is “DG”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
–60
Unit
V
+10 / –20
–2.8
V
A
Note1
Drain peak current
ID (pulse)
–4.2
A
Body - drain diode reverse drain current
Channel dissipation
IDR
–2.8
A
Pch Note2
1.5
W
W
°C
°C
Note1
Channel dissipation
Pch (pulse)
Tch
5
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
Rev.3.00 Jun 05, 2006 page 1 of 6
RQJ0601DGDQS
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
Min
–60
+10
–20
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
ID = –10 mA, VGS = 0
—
—
V
IG = +100 µA, VDS = 0
IG = –100 µA, VDS = 0
VGS = +8 V, VDS = 0
—
—
V
—
+10
–10
–1
–2.0
155
210
—
µA
µA
µA
V
Gate to source leak current
IGSS
—
—
VGS = –16 V, VDS = 0
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
IDSS
—
—
VDS = –60 V, VGS = 0
VGS(off)
RDS(on)
RDS(on)
|yfs|
–1.0
—
—
VDS = –10 V, ID = –1 mA
ID = –1.4 A, VGS = –10 VNote3
ID = –1.4 A, VGS = –4.5 VNote3
ID = –1.4 A, VDS = –10 VNote3
124
150
4.1
590
75
mΩ
mΩ
S
—
Forward transfer admittance
Input capacitance
2.5
—
Ciss
Coss
Crss
td(on)
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = -10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
—
—
—
36
—
—
20
—
ID = –1 A, VGS = –10 V,
RL = 10 Ω, Rg = 4.7 Ω
tr
—
41
—
Turn - off delay time
Fall time
td(off)
—
43
—
tf
—
78
—
Total gate charge
Qg
—
9.6
1.3
1.5
-0.8
—
VDD = –10 V, VGS = –10 V,
ID = –2.8 A
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Qgs
—
—
Qgd
—
—
VDF
—
—
IF = –1.5 A, VGS = 0Note3
Rev.3.00 Jun 05, 2006 page 2 of 6
RQJ0601DGDQS
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
–100
–10
2.0
Operation in this area
is limited by RDS(on)
100
µs
1.5
1.0
0.5
0
–1
–0.1
Ta = 25°C
1 Shot Pulse
–0.01
–0.01
–0.1
–1
–10
–100
0
25
50
75
100 125 150
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
Typical Output Characteristics
–2.5
–2.5
–2.0
–1.5
–3 V
Pulse Test
Tc = 25
VDS = –10 V
Pulse Test
–2.7 V
°C
–10 V
–2.0
–1.5
–1.0
–0.5
0
–2.5 V
–1.0
–2.3 V
= 0 V
–0.5
0
25°C
Tc = 75°C
–25°C
V
GS
0
–0.5 –1 –1.5 –2 –2.5 –3 –3.5 –4
Gate to Source Voltage VGS (V)
0
–2
–4
–6
–8
–10
Drain to Source Voltage VDS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
Typical Transfer Characteristics (2)
–0.1
–0.01
–2.5
–2
VDS = –10 V
Pulse Test
Tc = 75°C
ID = –10 mA
–1.5
–1 mA
25°C
–0.001
–100 µA
–1
VDS = –10 V
Pulse Test
–25°C
–0.0001
–0.5
0
–0.5 –1 –1.5 –2 –2.5 –3
Gate to Source Voltage VGS (V)
–25
0
25 50
75 100 125 150
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 3 of 6
RQJ0601DGDQS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1
–0.8
–0.6
–0.4
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
VDS
=
–
4.5 V
–
10 V
0.1
–
0.2 A
–
1.5 A
1 A
0.5 A
–0.2
0
–
–
0.01
0
–5
–10
–15
–20
–0.1
–1
Drain Current ID (A)
–10
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
300
250
Pulse Test
VGS = –4.5 V
Pulse Test
VGS = –10 V
ID = –1.5
A
250
200
200
150
100
50
–
1 A
–
0.5 A
–
0.2 A
150
100
ID = –0.2 A, –0.5 A, –1 A, –1.5 A
–25
0
25 50 75 100 125 150
–25
0
25 50 75 100 125 150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
Forward Transfer Admittance vs.
Drain Current
–1000
–100
10
–25°C
Pulse Test
VGS = 0 V
VDS = –60 V
25°C
1
Tc = 75°C
–10
–1
Pulse Test
–
VDS
=
10 V
0.1
–0.1
–25
0
25 50
75 100 125 150
–1.0
Drain Current ID (A)
–10.0
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 4 of 6
RQJ0601DGDQS
Switching Characteristics
Dynamic Input Characteristics
1000
100
0
0
VDD
= –10 V
–
–
–
–
20
40
60
80
–
–
–
–
4
t
f
VGS
–
25 V
50 V
t
8
d(off)
VDD
=
–
50 V
–
t
d(on)
VDS
12
16
20
–
25 V
VDD
VGS
=
=
–
10 V
10 V
10
1
t
r
–
Rg = 4.7 Ω
= 5 µs
Tc = 25°C
ID
=
–
2.8 A
Tc = 25°C
–10 V
P
W
–
20
–
100
–
0.01
–
0.1
–
1
–10
0
4
8
12
16
Drain Current ID (A)
Gate Charge Qg (nC)
Input Capacitance vs.
Gate to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
900
850
800
750
1000
100
10
Ciss
Coss
Crss
700
650
VDS = 0 V
f = 1 MHz
VGS = 0 V
f = 1 MHz
1
–0
–10 –8 –6 –4 –2
0
2
4
6
8
10
–10 –20 –30 –40 –50 –60
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
–2.
5
2
–
0.9
VGS = 0
–
10V
Pulse Test
Tc = 25°C
–
–
–
–
0.8
0.7
0.6
0.5
–
ID
= –1 A
–
–
1.5
–
5V
–
1
–
10 mA
0.5
–
–
0.4
0.3
VGS = 0 V, 5 V
0
–25
0
25 50 75 100 125 150
0
–
0.4
–
0.8
–
1.2
–
1.6
–2.0
Source Drain Voltage VSD (V)
Case Temperature Tc (°C)
Rev.3.00 Jun 05, 2006 page 5 of 6
RQJ0601DGDQS
Package Dimensions
Package Name
UPAK
JEITA Package Code
SC-62
RENESAS Code
PLZZ0004CA-A
Previous Code
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
4.5 0.1
1.8 Max
1.5 0.1
(1.5)
0.44 Max
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Ordering Information
Part Name
Quantity
Shipping Container
φ178 reel, 12 mm Emboss taping
RQJ0601DGDQSTL-E
1000 pcs.
Rev.3.00 Jun 05, 2006 page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0
相关型号：
©2020 ICPDF网 联系我们和版权申明