RQJ0602EGDQATL-E [RENESAS]
Silicon P Channel MOS FET Power Switching; 硅P沟道MOS场效应管电源开关
| 型号： | RQJ0602EGDQATL-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon P Channel MOS FET Power Switching |
| 文件： | 总7页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RQJ0602EGDQA
Silicon P Channel MOS FET
Power Switching
REJ03G1273-0400
Rev.4.00
May 26, 2006
Features
•
Low on-resistance
RDS(on) = 490 mΩ typ (VGS = –10 V, ID = –0.55 A)
Low drive current
High speed switching
•
•
•
4.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A
(Package name: MPAK)
3
D
3
1
2
G
1. Source
2. Gate
3. Drain
2
S
1
Note: Marking is “EG”.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
–60
Unit
V
V
+10 / –20
–1.1
A
Note1
Drain peak current
ID(Pulse)
–3
A
Body - drain diode reverse drain current
Channel dissipation
IDR
–1.1
A
Pch Note2
Tch
0.8
W
°C
°C
Channel temperature
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Rev.4.00, May 26, 2006, page 1 of 6
RQJ0602EGDQA
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS
Min
–60
+10
–20
—
Typ
—
Max
—
Unit
V
Test conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
ID = –10 mA, VGS = 0
—
—
V
IG = +100 µA, VDS = 0
IG = –100 µA, VDS = 0
—
—
V
—
+10
–10
–1
–2.0
613
854
—
µA
µA
µA
V
VGS = +8 V, VDS = 0
Gate to source leak current
IGSS
—
—
VGS = –16 V, VDS = 0
Drain to source leak current
Gate to source cutoff voltage
Drain to source on state resistance
IDSS
—
—
VDS = –60 V, VGS = 0
VGS(off)
RDS(on)
RDS(on)
|yfs|
–1.0
—
—
VDS = –10 V, ID = –1 mA
ID = –0.55 A, VGS = –10 VNote3
ID = –0.55 A, VGS = –4.5 VNote3
ID = –0.55 A, VDS = –10 VNote3
490
613
1.2
145
24
mΩ
mΩ
S
—
Forward transfer admittance
Input capacitance
0.7
—
Ciss
Coss
Crss
td(on)
—
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VDS = –10 V, VGS = 0,
f = 1 MHz
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
—
—
—
11
—
—
23
—
ID = –0.5 A, VGS = –10 V,
RL = 20 Ω, Rg = 4.7 Ω
tr
—
24
—
Turn - off delay time
Fall time
td(off)
—
28
—
tf
—
19
—
Total gate charge
Qg
—
3.0
0.5
0.6
–0.9
—
VDD = –10 V, VGS = –10 V,
ID = –1.1A
Gate to source charge
Gate to drain charge
Body - drain diode forward voltage
Notes: 3. Pulse test
Qgs
—
—
Qgd
—
—
VDF
—
—
IF = –1.5 A, VGS = 0 Note3
Rev.4.00, May 26, 2006, page 2 of 6
RQJ0602EGDQA
Main Characteristics
Maximum Channel Power
Dissipation Curve
Maximum Safe Operation Area
–100
–10
1.2
1.0
0.8
0.6
0.4
0.2
0
Operation in this area
is limited by RDS(on)
1 ms
–1
–0.1
Tc = 25°C
–0.01
0
25
50
75 100 125 150
–0.01
–0.1
–1
–10
–100
Ambient Temperature Ta (°C)
Drain to Source Voltage VDS (V)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Typical Transfer Characteristics (1)
Typical Output Characteristics
–10 V
–1.0
–1.0
–0.8
–0.6
–0.4
–4.5 V
–3 V
–3.1 V
VDS = –10 V
Pulse Test
–2.9 V
–0.8
–2.8 V
–2.7 V
–0.6
–0.4
–0.2
Tc = 75°C
–2.6 V
–2.5 V
25°C
–2.4 V
–2.3 V
–0.2
0
–25°C
Pulse Test
Tc = 25
°
C
V
= 0 V
GS
0
0
–1
–2
–3
–4
–5
–3
0
–1
–2
–4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Gate to Source Cutoff Voltage vs.
Case Temperature
Typical Transfer Characteristics (2)
–2.5
–2.0
–0.1
VDS = -10 V
Pulse Test
ID = –10 mA
–1 mA
–0.01
Tc = 75°C
25°C
–1.5
–1.0
–0.5
–0.001
–25°C
–0.1 mA
VDS = –10 V
Pulse Test
–0.0001
–25
0
25 50 75 100 125 150
0
–0.5 –1
–1.5
–2 –2.5
–3
Case Temperature Tc (°C)
Gate to Source Voltage VGS (V)
Rev.4.00, May 26, 2006, page 3 of 6
RQJ0602EGDQA
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
–2.0
–1.5
–1.0
10
Pulse Test
Tc = 25°C
Pulse Test
Tc = 25°C
3
1.0
ID = –1 A
VGS = –4.5 V
–0.5 A
–0.2 A
–10 V
0.3
–0.5
0
0.1
–0.1
–0.3
–1
–3
–10
0
–4
–8
–12
–16
–20
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Static Drain to Source on State Resistance
vs. Case Temperature
Static Drain to Source on State Resistance
vs. Case Temperature
1200
1000
Pulse Test
VGS = –4.5 V
Pulse Test
900 VGS = 10 V
ID = –1 A
1000
800
600
400
ID = –1.0 A
800
700
600
–0.5 A
–0.2 A
–0.5 A
–0.2 A
500
400
300
–25
0
25
50 75 100 125 150
–25
0
25
50 75 100 125 150
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Zero Gate Voltage Drain current vs.
Case Temperature
Forward Transfer Admittance vs.
Drain Current
10
–1000
–100
Pulse Test
VDS = –10 V
Pulse Test
VGS = 0 V
VDS
=
–
60 V
–25°C
1
25°C
–10
–1
Tc = 75°C
0.1
–0.1
–25
0
25 50 75 100 125 150
–0.3
–1.0
Drain Current ID (A)
Case Temperature Tc (°C)
Rev.4.00, May 26, 2006, page 4 of 6
RQJ0602EGDQA
Switching Characteristics
Dynamic Input Characteristics
1000
0
–20
–40
0
VDD = –10 V
GS = –10 V
Rg = 4.7 Ω
= 5 µs
V
DD = –10 V
V
–4
V
DD = –50 V
P
W
–25 V
–10 V
100
10
Tc = 25°C
–25 V
–8
t
d(off)
t
–50 V
d(on)
VDS
–60
–12
–16
–20
t
VGS
r
t
f
–80
ID = –1.1 A
Tc = 25°C
1
–100
–0.01
–0.1
–1
–10
0
0.8
1.2
2.4
2.8
3.2 4.0
Gate Charge Qg (nC)
Drain Current ID (A)
Input Capacitance vs.
Gate to Source Voltage
Typical Capacitance vs.
Drain to Source Voltage
1000
100
10
230
VGS = 0 V
f = 1 MHz
220
210
Ciss
200
190
Coss
Crss
180
VDS = 0 V
f = 1 MHz
170
160
1
0
–10
–20
–30
–40
–50
–10
–5
0
5
10
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
–1.0
–1.0
–0.8
–0.6
–0.4
VGS = 0
Pulse Test
Tc = 25°C
–0.9
–0.8
–0.7
–0.6
ID = –10 mA
–10 V
VGS = 0 V, 5 V
–1 mA
VGS = –5 V
–0.5
–0.2
0
–0.4
–0.3
–25
0
25 50 75 100 125 150
0
–0.4
–0.8
–1.2
–1.6
–2.0
Source to Drain Voltage VSD (V)
Case Temperature Tc (°C)
Rev.4.00, May 26, 2006, page 5 of 6
RQJ0602EGDQA
Package Dimensions
Package Name
MPAK
JEITA Package Code
SC-59A
RENESAS Code
PLSP0003ZB-A
Previous Code
MASS[Typ.]
0.011g
MPAK(T) / MPAK(T)V
D
A
Q
c
e
E
HE
L
L
P
L
1
Dimension in Millimeters
Min Nom Max
Reference
Symbol
A
A
A3
b
A
A1
A2
A3
b
b1
c
c1
D
1.0
0
1.0
1.3
0.1
1.2
x
S
A
M
e
1.1
0.25
0.42
0.4
0.35
0.1
0.5
A
2
1
A
0.13 0.15
0.11
3.1
2.7
1.35
e1
E
e
1.5
0.95
2.8
1.65
A
S
HE
L
L1
LP
x
b2
e1
I1
2.2
3.0
b
0.35
0.15
0.25
0.75
0.55
0.65
0.05
0.55
b
1
c1
I1
c
1.95
0.3
b
2
1.05
A-A Section
Pattern of terminal position areas
Q
Ordering Information
Part Name
Quantity
Shipping Container
φ178 mm reel, 8 mm Emboss taping
RQJ0602EGDQATL-E
3000 pcs.
Rev.4.00, May 26, 2006, page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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