CR6LM-12BB00 [RENESAS]

Thyristor Medium Power Use; 晶闸管中等功率应用
CR6LM-12BB00
型号: CR6LM-12BB00
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Thyristor Medium Power Use
晶闸管中等功率应用

文件: 总8页 (文件大小:79K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary Datasheet  
CR6LM-12B  
Thyristor  
R07DS0210EJ0100  
Rev.1.00  
Dec 03, 2010  
Medium Power Use  
Features  
IT (AV) : 6 A  
DRM : 600 V  
GT : 10 mA  
Viso : 1800V  
Insulated Type  
Planar Passivation Type  
UL Recognized : Yellow Card No. E223904  
V
I
Outline  
RENESAS Package code: PRSS0003AF-A)  
Package name: TO-220FL)  
(
2
1. Cathode  
2. Anode  
3. Gate  
3
1
1
2
3
Applications  
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control  
applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
VRRM  
VRSM  
600  
720  
480  
600  
480  
V
V
V
V
V
VR (DC)  
VDRM  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
R07DS0210EJ0100 Rev.1.00  
Dec 03, 2010  
Page 1 of 7  
CR6LM-12B  
Preliminary  
Parameter  
Symbol  
IT (RMS)  
IT (AV)  
Ratings  
Unit  
A
Conditions  
RMS on-state current  
9.4  
6
Average on-state current  
A
Commercial frequency, sine half wave  
180° conduction, Tc = 110°C  
Surge on-state current  
I2t for fusing  
ITSM  
I2t  
90  
34  
A
60Hz sine half wave 1 full cycle,  
peak value, non-repetitive  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
Storage temperature  
Mass  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
5
W
W
V
0.5  
6
10  
2
V
A
– 40 to +150  
– 40 to +150  
1.5  
°C  
°C  
g
Tstg  
Typical value  
Isolation voltage  
Viso  
1800  
V
Ta = 25°C, AC 1 minute,  
each terminal to case  
Electrical Characteristics  
Parameter  
Symbol  
IRRM  
Min.  
Typ.  
Max.  
2.0/5.0  
2.0/5.0  
1.7  
Unit  
mA  
mA  
V
Test conditions  
Repetitive peak reverse current  
Repetitive peak off-state current  
On-state voltage  
Tj = 125°C/150°C, VRRM applied  
Tj = 125°C/150°C, VDRM applied  
IDRM  
VTM  
Tc = 25°C, ITM = 20 A,  
instantaneous value  
VGT  
VGD  
IGT  
0.2/0.1  
15  
1.0  
V
V
Tj = 25°C, VD = 6 V, IT = 1 A  
Tj = 125°C/150°C, VD = 1/2 VDRM  
Tj = 25°C, VD = 6 V, IT = 1 A  
Tj = 25°C, VD = 12 V  
Gate trigger voltage  
Gate non-trigger voltage  
Gate trigger current  
Holding current  
10  
mA  
mA  
IH  
Thermal resistance  
Rth (j-c)  
4.0  
C/W Junction to caseNote1  
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
R07DS0210EJ0100 Rev.1.00  
Dec 03, 2010  
Page 2 of 7  
CR6LM-12B  
Preliminary  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
103  
102  
101  
100  
100  
80  
60  
40  
20  
0
Tc = 125°C  
100  
101  
102  
0
1
2
3
4
5
On-State Voltage (V)  
Conduction Time (Cycles at 50Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics  
102  
101  
100  
10-1  
103  
Typical Example  
VFGM = 6V  
PGM = 5W  
102  
101  
P
G(AV)  
= 0.5W  
VGT = 1V  
IGT = 10mA  
VGD = 0.1V  
102  
IFGM = 2A  
103  
100  
101  
40  
0
40  
80  
120  
160  
Gate Current (mA)  
Junction Temperature (°C)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
103  
102  
101  
102  
Typical Example  
101  
100  
10–1  
10–3  
10–2  
10–1  
100  
101  
40  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Time (s)  
R07DS0210EJ0100 Rev.1.00  
Dec 03, 2010  
Page 3 of 7  
CR6LM-12B  
Preliminary  
Allowable Case Temperature vs.  
Maximum Average Power Dissipation  
(Single-Phase Half Wave)  
Average On-State Current  
(Single-Phase Half Wave)  
16  
160  
140  
14  
12  
10  
8
θ
180°  
120°  
90°  
60°  
360°  
120  
100  
Resistive,  
inductive loads  
θ = 30°  
80  
60  
180°  
120°  
90°  
60°  
6
θ
4
40  
20  
0
360°  
2
Resistive,  
inductive loads  
θ = 30°  
0
0
2
4
6
8
10  
12  
0
0
0
2
4
6
8
10  
12  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Case Temperature vs.  
Average On-State Current  
(Single-Phase Full Wave)  
Maximum Average Power Dissipation  
(Single-Phase Full Wave)  
16  
160  
140  
120  
100  
80  
14  
12  
10  
8
θ
θ
180°  
120°  
90°  
60°  
360°  
θ = 30°  
Resistive  
loads  
60  
6
180°  
120°  
90°  
4
40  
θ
θ
360°  
20  
2
60°  
Resistive loads  
θ = 30°  
0
0
0
2
4
6
8
10  
12  
2
4
6
8
10  
12  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Case Temperature vs.  
Average On-State Current  
(Rectangular Wave)  
Maximum Average Power Dissipation  
(Rectangular Wave)  
16  
160  
140  
14  
12  
10  
8
90°  
DC  
270°  
180°  
120  
100  
60°  
θ = 30°  
120°  
Resistive,  
inductive loads  
80  
60  
θ
6
360°  
θ
4
40  
20  
360°  
60° 180°  
90° 120°  
270°  
DC  
10  
2
Resistive,  
inductive loads  
θ = 30°  
0
0
0
2
4
6
8
10  
12  
2
4
6
8
12  
Average On-State Current (A)  
Average On-State Current (A)  
R07DS0210EJ0100 Rev.1.00  
Dec 03, 2010  
Page 4 of 7  
CR6LM-12B  
Preliminary  
Repetitive Peak Reverse Voltage vs.  
Junction Temperature  
Breakover Voltage vs.  
Junction Temperature  
160  
160  
140  
120  
100  
Typical Example  
Typical Example  
140  
120  
100  
80  
80  
60  
60  
40  
40  
20  
0
20  
0
–40  
0
40  
80  
120  
160  
–40  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
160  
140  
160  
140  
Typical Example  
Typical Example  
Tj = 125°C  
Tj = 150°C  
120  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
101  
102  
103  
104  
101  
102  
103  
104  
Rate of Rise of Off-State Voltage (V/μs)  
Rate of Rise of Off-State Voltage (V/μs)  
Turn-Off Time vs.  
Holding Current vs.  
Junction Temperature  
Junction Temperature  
103  
80  
Typical Example  
70  
60  
Typical Example  
50  
40  
102  
30  
20  
Distribution  
I
V
V
= 6A, –di/dt = 5A/μs,  
= 300V, dv/dt = 20V/μs  
T
D
R
10  
0
= 50V  
101  
–40  
0
20 40 60 80 100 120 140 160  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Junction Temperature (°C)  
R07DS0210EJ0100 Rev.1.00  
Dec 03, 2010  
Page 5 of 7  
CR6LM-12B  
Preliminary  
Gate Trigger Current vs.  
Gate Current Pulse Width  
103  
102  
101  
Typical Example  
10-1  
100  
101  
102  
Gate Current Pulse Width (μs)  
R07DS0210EJ0100 Rev.1.00  
Dec 03, 2010  
Page 6 of 7  
CR6LM-12B  
Preliminary  
Package Dimensions  
Package Name  
TO-220FL  
JEITA Package Code  
RENESAS Code  
PRSS0003AF-A  
Previous Code  
TO-220FL  
MASS[Typ.]  
1.5g  
Unit: mm  
10.0 ± 0.3  
2.8 ± 0.2  
φ 3.2 ± 0.2  
1.15 ± 0.2  
1.15 ± 0.2  
0.75 ± 0.15  
2.54 ± 0.25  
0.40 ± 0.15  
2.54 ± 0.25  
Ordering Information  
Orderable Part Number  
CR6LM-12B#B00  
CR6LM-12B-A8#B00  
Packing  
Quantity  
50 pcs. Straight type  
50 pcs. A8 Lead form  
Remark  
Tube  
Tube  
Note : Please confirm the specification about the shipping in detail.  
R07DS0210EJ0100 Rev.1.00  
Dec 03, 2010  
Page 7 of 7  
Notice  
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Colophon 1.0  

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