CR6PM [POWEREX]
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE; 中功率使用绝缘型，玻璃钝化类型
| 型号： | CR6PM |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Dimensions
in mm
CR6PM
OUTLINE DRAWING
10.5 MAX
5.2
2.8
TYPE
NAME
φ3.2±0.2
1.3 MAX
VOLTAGE
CLASS
0.8
2.54
2.54
0.5
2.6
Measurement point of
case temperature
1 2 3
• IT (AV) ...........................................................................6A
• VDRM ..............................................................400V/600V
• IGT ..........................................................................10mA
• Viso........................................................................ 1500V
• UL Recognized: File No. E80276
2
1
CATHODE
ANODE
GATE
1
2
3
3
TO-220F
APPLICATION
Switching mode power supply, ECR, regulator for autocycle, motor control
MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Voltage class
Symbol
Parameter
Unit
8
12
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
400
500
320
400
320
600
720
480
600
480
V
V
V
V
V
VRSM
VR (DC)
VDRM
Repetitive peak off-state voltage
DC off-state voltage
VD (DC)
Symbol
Parameter
RMS on-state current
Average on-state current
Surge on-state current
Conditions
Ratings
Unit
A
IT (RMS)
IT (AV)
ITSM
9.4
6
Commercial frequency, sine half wave, 180° conduction, Tc=85°C
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive
90
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
34
A s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
5
0.5
6
W
W
V
10
2
V
A
–40 ~ +125
–40 ~ +125
2.0
°C
°C
g
Tstg
—
Typical value
Viso
Isolation voltage
Ta=25°C, AC 1 minute, each terminal to case
1500
V
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
Typ.
—
Max.
2.0
2.0
1.7
1.0
—
mA
mA
V
IRRM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tc=25°C, ITM=20A, Instantaneous value
Tj=25°C, VD=6V, IT=1A
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=1A
Tj=25°C, VD=12V
IDRM
VTM
VGT
VGD
IGT
—
—
—
—
—
—
V
Gate trigger voltage
0.2
—
—
Gate non-trigger voltage
Gate trigger current
V
—
10
mA
mA
°C/W
—
15
—
—
IH
Holding current
✽1
—
4.0
Rth (j-c)
Thermal resistance
Junction to case
✽1. The contact thermal resistance Rth (j-c) is 0.5°C/W with greased.
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
103
200
180
160
140
120
100
80
7
5
Tc = 125°C
3
2
102
7
5
3
2
101
7
5
3
2
60
40
20
100
0
0
1
2
3
4
5
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
102
7
5
TYPICAL EXAMPLE
7
5
3
2
3
2
V
FGM = 6V
P
GM = 5W
101
7
5
3
2
102
7
5
3
2
P
G(AV)
= 0.5W
V
GT = 1V
100
7
5
101
7
5
I
GT = 10mA
3
2
3
2
V
GD = 0.2V
IFGM = 2A
10–1
100
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3
5
–40–20 0 20 40 60 80 100120140160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
102
7
5
DISTRIBUTION
3
2
TYPICAL
EXAMPLE
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
–40 –20
0
20 40 60 80 100 120
10–32 3 5710–22 3 5710–12 3 571002 3 57101
JUNCTION TEMPERATURE (°C)
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
16
160
θ = 30°
180°
120°
90°
14
12
10
8
140
120
100
80
θ
360°
60°
RESISTIVE,
INDUCTIVE
LOADS
6
60
θ
360°
4
40
RESISTIVE,
INDUCTIVE
LOADS
θ = 30° 60° 90° 120° 180°
2
20
0
0
0
2
4
6
8
10 12 14 16
0
1
2
3
4
5
6
7
8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
16
θ = 30°
14
140
θ
θ
180°
120°
360°
12
120
100
80
60
40
20
0
90°
60°
RESISTIVE LOADS
10
8
6
θ = 30°
90° 180°
60° 120°
4
θ
θ
360°
RESISTIVE LOADS
10 12 14 16
2
0
0
2
4
6
8
0
2
4
6
8
10 12 14 16
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
16
160
θ = 30°
DC
14
12
10
8
140
120
100
80
60°
270°
180°
120°
90°
θ
360°
RESISTIVE,
INDUCTIVE
LOADS
6
60
θ
θ = 30° 90° 180°
DC
360°
4
40
60° 120° 270°
RESISTIVE,
INDUCTIVE
LOADS
2
20
0
0
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
140
120
100
80
160
140
120
100
80
TYPICAL EXAMPLE
Tj = 125°C
TYPICAL
EXAMPLE
I
GT (25°C)
# 1 4.7mA
# 2 7.2mA
# 2
60
60
40
40
# 1
20
20
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
50
103
7
45
40
35
30
25
20
15
10
5
5
3
2
102
7
5
3
2
DISTRIBUTION
TYPICAL EXAMPLE
101
7
5
3
2
100
0
–40–20 0 20 40 60 80 100120140160
0
2
4
6
8 10 12 14 16 18 20
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT (mA)
TURN-OFF TIME VS.
TURN-ON TIME VS. GATE CURRENT
JUNCTION TEMPERATURE
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
80
70
60
50
40
30
20
10
0
V
R
D
= 100V
TYPICAL
EXAMPLE
L = 16Ω
T
a
= 25°C
TYPICAL
EXAMPLE
I
GT (25°C)
# 5.2mA
#
DISTRIBUTION
IT = 6A, –di/dt = 5A/µs,
V
D
= 300V, dv/dt = 20V/µs
= 50V
VR
0
10 20 30 40 50 60 70 80 90 100
GATE CURRENT (mA)
0
20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
160
104
7
tw
TYPICAL EXAMPLE
TYPICAL EXAMPLE
5
140
120
100
80
3
2
0.1s
103
7
5
3
2
60
102
7
5
40
3
2
20
0
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT PULSE WIDTH (µs)
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
Feb.1999
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