CR6PM-12A [RENESAS]

Thyristor Medium Power Use; 晶闸管中等功率应用
CR6PM-12A
型号: CR6PM-12A
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Thyristor Medium Power Use
晶闸管中等功率应用

文件: 总7页 (文件大小:109K)
中文:  中文翻译
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CR6PM-12  
Thyristor  
Medium Power Use  
REJ03G0358-0100  
Rev.1.00  
Aug.20.2004  
Features  
IT (AV) : 6 A  
VDRM : 600 V  
Insulated Type  
Planar Passivation Type  
UL Recognized : Yellow Card No. E223904  
File No. E80271  
I
GT : 10 mA  
Viso : 1500V  
Outline  
TO-220F  
2
1. Cathode  
2. Anode  
3. Gate  
3
1
1
2
3
Applications  
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control  
applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
VRRM  
VRSM  
600  
720  
480  
600  
480  
V
V
V
V
V
VR (DC)  
VDRM  
Repetitive peak off-state voltage  
DC off-state voltage  
VD (DC)  
Rev.1.00, Aug.20.2004, page 1 of 6  
CR6PM-12  
Parameter  
Symbol  
IT (RMS)  
IT (AV)  
Ratings  
Unit  
A
Conditions  
RMS on-state current  
9.4  
6
Average on-state current  
A
Commercial frequency, sine half wave  
180° conduction, Tc = 85°C  
Surge on-state current  
I2t for fusing  
ITSM  
I2t  
90  
34  
A
60Hz sine half wave 1 full cycle,  
peak value, non-repetitive  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
Storage temperature  
Mass  
PGM  
PG (AV)  
VFGM  
VRGM  
IFGM  
Tj  
5
W
W
V
0.5  
6
10  
2
V
A
– 40 to +125  
– 40 to +125  
2.0  
°C  
°C  
g
Tstg  
Typical value  
Isolation voltage  
Viso  
1500  
V
Ta = 25°C, AC 1 minute,  
each terminal to case  
Electrical Characteristics  
Rated value  
Parameter  
Symbol  
Unit  
Test conditions  
Min.  
Typ.  
Max.  
2.0  
Repetitive peak reverse current  
Repetitive peak off-state current  
On-state voltage  
IRRM  
IDRM  
VTM  
mA  
mA  
V
Tj = 125°C, VRRM applied  
Tj = 125°C, VDRM applied  
2.0  
1.7  
Tc = 25°C, ITM = 20 A,  
instantaneous value  
VGT  
VGD  
IGT  
0.2  
15  
1.0  
V
V
Tj = 25°C, VD = 6 V, IT = 1 A  
Tj = 125°C, VD = 1/2 VDRM  
Tj = 25°C, VD = 6 V, IT = 1 A  
Tj = 25°C, VD = 12 V  
Gate trigger voltage  
Gate non-trigger voltage  
Gate trigger current  
Holding current  
10  
mA  
mA  
°C/W  
IH  
Thermal resistance  
Rth (j-c)  
4.0  
Junction to caseNote1  
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
Rev.1.00, Aug.20.2004, page 2 of 6  
CR6PM-12  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
103  
7
5
200  
180  
160  
140  
120  
100  
80  
Tc = 125°C  
3
2
102  
7
5
3
2
101  
7
60  
5
40  
3
2
20  
100  
0
0
1
2
3
4
5
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics  
102  
7
5
103  
7
5
Typical Example  
3
2
3
2
V
FGM  
= 6V  
P
= 5W  
GM  
101  
7
102  
7
5
5
P
G(AV)  
= 0.5W  
3
2
3
2
V
GT  
= 1V  
100  
7
5
101  
7
5
I
= 10mA  
GT  
3
2
3
2
V
= 0.2V  
I
= 2A  
GD  
FGM  
100  
–604020  
10–1  
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5  
0 20 40 60 80 100120 140  
Gate Current (mA)  
Junction Temperature (°C)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
103  
102  
7
5
Typical Example  
7
5
3
2
101  
3
2
7
5
3
2
100  
102  
7
7
5
3
2
5
10–1  
3
2
7
5
3
2
101  
–60 –40 –20  
10–2  
0
20 40 60 80 100 120 140  
1032 3 5710–22 3 5710–12 3 571002 3 57101  
Junction Temperature (°C)  
Time (s)  
Rev.1.00, Aug.20.2004, page 3 of 6  
CR6PM-12  
Allowable Case Temperature vs.  
Average On-State Current  
(Single-Phase Half Wave)  
Maximum Average Power Dissipation  
(Single-Phase Half Wave)  
16  
14  
12  
10  
8
160  
140  
120  
100  
80  
Resistive,  
inductive loads  
θ = 30°  
180°  
120°  
90°  
θ
360°  
60°  
6
60  
θ
4
40  
360°  
θ = 30° 60° 90° 120° 180°  
2
20  
Resistive,  
inductive loads  
0
0
0
2
4
6
8
10 12 14 16  
0
0
0
1
2
3
4
5
6
7
8
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Case Temperature vs.  
Average On-State Current  
(Single-Phase Full Wave)  
Maximum Average Power Dissipation  
(Single-Phase Full Wave)  
16  
160  
140  
120  
100  
80  
θ = 30°  
14  
12  
10  
8
θ
θ
180°  
120°  
90°  
360°  
Resistive loads  
60°  
6
60  
θ = 30°  
90° 180°  
60° 120°  
4
40  
θ
θ
360°  
2
20  
Resistive loads  
0
0
0
2
4
6
8
10 12 14 16  
2
4
6
8
10 12 14 16  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Case Temperature vs.  
Average On-State Current  
(Rectangular Wave)  
Maximum Average Power Dissipation  
(Rectangular Wave)  
16  
14  
12  
10  
8
160  
140  
120  
100  
80  
θ = 30°  
60°  
DC  
270°  
180°  
120°  
90°  
θ
360°  
Resistive,  
inductive loads  
6
60  
θ = 30° 90° 180°  
DC  
θ
4
40  
360°  
60° 120° 270°  
2
20  
Resistive,  
inductive loads  
0
0
0
2
4
6
8
10 12 14 16  
2
4
6
8
10 12 14 16  
Average On-State Current (A)  
Average On-State Current (A)  
Rev.1.00, Aug.20.2004, page 4 of 6  
CR6PM-12  
Breakover Voltage vs.  
Junction Temperature  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
160  
140  
120  
100  
80  
160  
140  
120  
100  
80  
Typical Example  
Typical Example  
Tj = 125°C  
60  
60  
40  
40  
20  
20  
0
–60 –40 –20  
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
0 20 40 60 80 100 120 140  
Junction Temperature (°C)  
Rate of Rise of Off-State Voltage (V/µs)  
Turn-Off Time vs.  
Junction Temperature  
Holding Current vs.  
Junction Temperature  
103  
80  
Typical Example  
7
5
70  
60  
50  
40  
30  
20  
10  
0
Typical Example  
3
2
102  
7
5
Distribution  
I = 6A, –di/dt = 5A/µs,  
3
2
T
V
D
V
R
= 300V, dv/dt = 20V/µs  
= 50V  
101  
–60 –40 –20  
0
20 40 60 80 100 120 140  
0
20 40 60 80 100 120 140 160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Repetitive Peak Reverse Voltage vs.  
Junction Temperature  
Gate Trigger Current vs.  
Gate Current Pulse Width  
160  
140  
120  
100  
80  
103  
Typical Example  
Typical Example  
7
5
3
2
102  
60  
7
5
40  
3
2
20  
0
–60 –40 –20  
101  
0 20 40 60 80 100 120 140  
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102  
Junction Temperature (°C)  
Gate Current Pulse Width (µs)  
Rev.1.00, Aug.20.2004, page 5 of 6  
CR6PM-12  
Package Dimensions  
TO-220F  
EIAJ Package Code  
Conforms  
Mass (g) (reference value)  
2.0  
Lead Material  
Cu alloy  
JEDEC Code  
10.5 max  
5.2  
2.8  
φ 3.2 0.2  
1.3 max  
0.8  
0.5  
2.6  
2.54  
2.54  
Dimension in Millimeters  
Min Typ Max  
Symbol  
A
A
A
b
1
2
D
E
e
x
Note 1) The dimensional figures indicate representative values unless  
otherwise the tolerance is specified.  
y
y1  
ZD  
ZE  
Order Code  
Standard order  
code example  
Lead form  
Standard packing  
Quantity  
Standard order code  
Straight type  
Lead form  
Vinyl sack  
Plastic Magazine (Tube)  
100 Type name +A  
CR6PM-12A  
50 Type name +A – Lead forming code CR6PM-12A-A8  
Note : Please confirm the specification about the shipping in detail.  
Rev.1.00, Aug.20.2004, page 6 of 6  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
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Colophon .1.0  

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