CR6PM-12G [RENESAS]

Thyristor Medium Power Use; 晶闸管中等功率应用
CR6PM-12G
型号: CR6PM-12G
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

Thyristor Medium Power Use
晶闸管中等功率应用

文件: 总8页 (文件大小:101K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary Datasheet  
CR6PM-12G  
R07DS0670EJ0100  
Rev.1.00  
Thyristor  
Medium Power Use  
Jul 23, 2012  
Features  
IT (AV) : 6 A  
DRM : 600 V  
IGT: 10mA  
Insulated Type  
Planar Type  
UL Recognized: File No. E223904  
V
Viso : 2000 V  
Outline  
RENESAS Package code: PRSS0003AA-A  
(Package name: TO-220F)  
2
1. Cathode  
2. Anode  
3. Gate  
3
1
1
2
3
Applications  
Switching mode power supply, regulator for autocycle, motor control, heater control, and other general purpose control  
applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
DC reverse voltage  
VRRM  
VRSM  
VR(DC)  
VDRM  
VD(DC)  
600  
720  
480  
600  
480  
V
V
V
V
V
Repetitive peak off-state voltage  
DC off-state voltage  
R07DS0670EJ0100 Rev.1.00  
Jul 23, 2012  
Page 1 of 7  
CR6PM-12G  
Preliminary  
Parameter  
Symbol  
IT(RMS)  
IT(AV)  
Ratings  
Unit  
A
Conditions  
RMS on-state current  
9.4  
6
Average on-state current  
A
Commercial frequency, sine half wave  
180conduction, Tc = 110C  
Surge on-state current  
I2t for fusing  
ITSM  
I2t  
90  
34  
A
60 Hz sine half wave, 1full cycle,  
peak value, non-repetitive  
A2s  
Value corresponding to 1cycle of half  
wave 60 Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate forward voltage  
Peak gate reverse voltage  
Peak gate forward current  
Junction temperature  
Storage temperature  
Mass  
PGM  
PG(AV)  
VFGM  
VRGM  
IFGM  
Tj  
5
W
W
V
0.5  
6
10  
2
V
A
– 40 to +150  
– 40 to +150  
2.0  
C  
C  
g
Tstg  
Typical value  
Isolation voltage  
Viso  
2000  
V
Ta = 25C, AC 1 minute,  
each terminal to case  
Electrical Characteristics  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
2.0  
Unit  
mA  
mA  
mA  
mA  
V
Test conditions  
Tj = 125C, VRRM applied  
Tj = 150C, VRRM applied  
Tj = 125C, VDRM applied  
Tj = 150C, VDRM applied  
Repetitive peak reverse current  
IRRM  
IDRM  
VTM  
5.0  
Repetitive peak off-state current  
On-state voltage  
2.0  
5.0  
1.7  
Tj = 25C, ITM = 20 A  
instantaneous value  
Gate trigger voltage  
VGT  
VGD  
0.2  
0.1  
15  
1.0  
V
V
Tj = 25C, VD = 6 V, IT = 1 A  
Tj = 125C, VD = 1/2 VDRM  
Tj = 150C, VD = 1/2 VDRM  
Tj = 25C, VD = 6 V, IT = 1 A  
Tj = 25°C, VD = 12 V  
Gate non-trigger voltage  
V
Gate trigger current  
Holding current  
IGT  
IH  
10  
mA  
mA  
C/W  
Thermal resistance  
Rth(j-c)  
4.0  
Junction to case Note1  
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.  
R07DS0670EJ0100 Rev.1.00  
Jul 23, 2012  
Page 2 of 7  
CR6PM-12G  
Preliminary  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
103  
102  
101  
100  
100  
80  
60  
40  
20  
0
Tc = 12C  
100  
101  
102  
0
1
2
3
4
5
On-State Voltage (V)  
Conduction Time (Cycles at 50Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics  
102  
101  
100  
10-1  
103  
Typical Example  
VFGM = 6V  
PGM = 5W  
102  
P
G(AV)  
= 0.5W  
VGT = 1V  
101  
IGT = 10mA  
VGD = 0.1V  
IFGM = 2A  
103  
100  
101  
102  
40  
0
40  
80  
120  
160  
Gate Current (mA)  
Junction Temperature (°C)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
103  
102  
101  
102  
Typical Example  
101  
100  
101  
103  
102  
101  
100  
101  
40  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Time (s)  
R07DS0670EJ0100 Rev.1.00  
Jul 23, 2012  
Page 3 of 7  
CR6PM-12G  
Preliminary  
Allowable Case Temperature vs.  
Average On-State Current  
(Single-Phase Half Wave)  
Maximum Average Power Dissipation  
(Single-Phase Half Wave)  
16  
160  
140  
14  
12  
10  
8
θ
180°  
120°  
90°  
60°  
360°  
120  
100  
Resistive,  
inductive loads  
θ = 30°  
80  
60  
180°  
120°  
90°  
60°  
6
θ
4
40  
20  
0
360°  
2
Resistive,  
inductive loads  
θ = 30°  
0
0
2
4
6
8
10  
12  
0
0
0
2
4
6
8
10  
12  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Case Temperature vs.  
Average On-State Current  
(Single-Phase Full Wave)  
Maximum Average Power Dissipation  
(Single-Phase Full Wave)  
16  
160  
140  
120  
100  
80  
14  
12  
10  
8
θ
θ
180°  
120°  
90°  
60°  
360°  
θ = 30°  
Resistive  
loads  
60  
6
180°  
120°  
90°  
4
40  
θ
θ
360°  
20  
2
60°  
Resistive loads  
θ = 30°  
0
0
0
2
4
6
8
10  
12  
2
4
6
8
10  
12  
Average On-State Current (A)  
Average On-State Current (A)  
Allowable Case Temperature vs.  
Average On-State Current  
(Rectangular Wave)  
Maximum Average Power Dissipation  
(Rectangular Wave)  
16  
160  
140  
Resistive,  
inductive loads  
14  
12  
10  
8
θ
90°  
DC  
270°  
180°  
360°  
120  
100  
60°  
θ = 30°  
120°  
80  
60  
6
θ
4
40  
360°  
60° 180°  
90° 120°  
270°  
DC  
10  
20  
2
Resistive,  
inductive loads  
θ = 30°  
0
0
0
2
4
6
8
10  
12  
2
4
6
8
12  
Average On-State Current (A)  
Average On-State Current (A)  
R07DS0670EJ0100 Rev.1.00  
Jul 23, 2012  
Page 4 of 7  
CR6PM-12G  
Preliminary  
Repetitive Peak Reverse Voltage vs.  
Junction Temperature  
Breakover Voltage vs.  
Junction Temperature  
160  
160  
140  
120  
100  
Typical Example  
Typical Example  
140  
120  
100  
80  
80  
60  
60  
40  
40  
20  
0
20  
0
–40  
0
40  
80  
120  
160  
–40  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage  
160  
160  
Typical Example  
Typical Example  
Tj = 12C  
Tj = 150°C  
140  
140  
120  
100  
80  
60  
40  
20  
0
120  
100  
80  
60  
40  
20  
0
101  
102  
103  
104  
101  
102  
103  
104  
Rate of Rise of Off-State Voltage (V/μs)  
Rate of Rise of Off-State Voltage (V/μs)  
Turn-Off Time vs.  
Junction Temperature  
Holding Current vs.  
Junction Temperature  
103  
80  
Typical Example  
70  
60  
Typical Example  
50  
102  
40  
30  
20  
Distribution  
I
V
V
= 6A, –di/dt = 5A/μs,  
= 300V, dv/dt = 20V/μs  
= 50V  
T
10  
0
D
R
101  
–40  
0
20 40 60 80 100 120 140 160  
0
40  
80  
120  
160  
Junction Temperature (°C)  
Junction Temperature (°C)  
R07DS0670EJ0100 Rev.1.00  
Jul 23, 2012  
Page 5 of 7  
CR6PM-12G  
Preliminary  
Gate Trigger Current vs.  
Gate Current Pulse Width  
103  
102  
101  
Typical Example  
10-1  
100  
101  
102  
Gate Current Pulse Width (μs)  
R07DS0670EJ0100 Rev.1.00  
Jul 23, 2012  
Page 6 of 7  
CR6PM-12G  
Preliminary  
Package dimensions  
Package Name  
TO-220F  
JEITA Package Code  
SC-67  
RENESAS Code  
PRSS0003AA-A  
Previous Code  
MASS[Typ.]  
Unit: mm  
2.0g  
10.5Max  
5.2  
2.8  
φ3.2 0.2  
1.3Max  
0.8  
2.54  
2.54  
0.5  
2.6  
Ordering Information  
Orderable Part Number  
CR6PM-12G#B00  
Packing  
Quantity  
100 pcs. Straight type  
50 pcs. A8 Lead form  
Remark  
Bag  
Tube  
CR6PM-12G-A8#B00  
Note: Please confirm the specification about the shipping in detail.  
R07DS0670EJ0100 Rev.1.00  
Jul 23, 2012  
Page 7 of 7  
Notice  
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Colophon 2.0  

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