BCR3PM-14LG-A8 [RENESAS]
Triac Medium Power Use; 三端双向可控硅中功率使用
| 型号： | BCR3PM-14LG-A8 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Triac Medium Power Use |
| 文件： | 总8页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR3PM-14LG
Triac
Medium Power Use
REJ03G1557-0100
Rev.1.00
Jul 06, 2007
Features
•
•
•
•
IT (RMS) : 3 A
VDRM : 800 V (Tj = 125°C)
•
The Product guaranteed maximum junction
temperature 150°C
Insulated Type
Planar Type
UL Recognized: Yellow Card No. E223904
File No. E80271
•
•
•
I
FGTI, IRGTI, IRGTIII : 30 mA
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Washing machine, inversion operation of capacitor motor, and other general controlling devices
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
Conditions
14
800
700
840
V
V
V
Tj = 125°C
Tj = 150°C
Repetitive peak off-state voltageNote1
VDRM
VDSM
Non-repetitive peak off-state voltageNote1
REJ03G1557-0100 Rev.1.00 Jul 06, 2007
Page 1 of 7
BCR3PM-14LG
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
Surge on-state current
I2t for fusing
IT (RMS)
3.0
A
Commercial frequency, sine full wave
360° conduction, Tc = 130°C
ITSM
I2t
30
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
3.7
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction temperature
Storage temperature
Mass
Tj
– 40 to +150
– 40 to +150
2.0
°C
°C
g
Tstg
—
Typical value
Isolation voltage
Viso
2000
V
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
Tj = 150°C, VDRM applied
VTM
—
—
1.6
Tc = 25°C, ITM = 4.5 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
Ι
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VRGT
Ι
VRGT
V
ΙΙΙ
Gate trigger currentNote2
IFGT
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
ΙΙ
ΙΙΙ
IRGT
30
Ι
IRGT
30
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
VGD
0.2/0.1
—
—
—
—
—
5.2
—
V
Tj = 125°C/150°C, VD = 1/2 VDRM
Junction to caseNote3
Rth (j-c)
(dv/dt)c
°C/W
V/µs
Critical-rate of rise of off-state
commutating voltageNote4
5/1
Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C/150°C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5 A/ms
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
REJ03G1557-0100 Rev.1.00 Jul 06, 2007
Page 2 of 7
BCR3PM-14LG
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
40
35
30
25
20
15
10
5
5
3
2
101
7
5
Tj = 150°C
3
2
100
7
5
Tj = 25°C
3
2
10–1
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
100
2
3
5 7 101
2
3
5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
102
7
5
103
7
Typical Example
V
GM=10V
3
2
5
P
G(AV) = 0.5W
PGM = 5W
101
7
I
3
2
RGT III
5
3
2
VGT
100
7
102
7
I I
FGT I, RGT I
5
IRGT I
3
2
5
VGD = 0.1V
10–1
3
2
7
IFGT I, IRGT III
5
3
2
IGM = 2A
10–2
101
–60 –40–20
100 2 3 5 7101 2 3 57102 2 3 57103 2 3 5 7104
0
20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
2
3
5 7 103
2
3
5 7104
103
5.5
Typical Example
7
5
5.0
4.5
4.0
3.5
3.0
2.5
3
2
102
7
2.0
1.5
1.0
0.5
0.0
5
3
2
101
–60 –40–20
10–1
2
3
5 7100
2
3
5 7 101
2 3
5 7 102
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
REJ03G1557-0100 Rev.1.00 Jul 06, 2007
Page 3 of 7
BCR3PM-14LG
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
160
140
120
100
80
Curves apply regardless
of conduction angle
360° Conduction
Resistive,
inductive loads
60
40
360° Conduction
Resistive,
inductive loads
20
0
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
Natural convection
No fins
Curves apply
regardless of
conduction angle
Resistive,
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
inductive loads
All fins are black painted
aluminum and greased
60
60
Curves apply regardless of
conduction angle
40
40
Resistive, inductive loads
Natural convection
20
20
0
0
0
0
0.5 1.0 1.5
2.0 2.5 3.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
106
7
5
103
7
Typical Example
Typical Example
3
2
5
105
7
3
2
5
3
2
104
7
102
7
5
3
2
5
103
7
3
2
5
3
2
102
101
–60 –40–20
–60 –40–20
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
REJ03G1557-0100 Rev.1.00 Jul 06, 2007
Page 4 of 7
BCR3PM-14LG
Latching Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
103
7
160
140
120
100
80
Typical Example
5
Distribution
3
2
102
7
5
–
, G
Typical Example
+
T
2
3
2
60
101
7
5
40
3
2
100
+
–
+
–
T
T
, G
, G
2
20
Typical Example
2
0
–60 –40–20
0
20 40 60 80 100 120 140 160
–60 –40–20
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
160
Typical Example
Tj = 125°C
Typical Example
Tj = 150°C
140
120
100
80
140
120
100
80
III Quadrant
I Quadrant
III Quadrant
I Quadrant
60
60
40
40
20
20
0
0
101
2
3
5 7102
2
3
5 7103
2
3
5 7104
101
2
3
5 7102
2
3
5 7103
2
3
5 7104
Rate of Rise of Off-State Voltage (V/µs)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
7
5
102
7
5
Time
Typical Example
Tj = 125°C
Typical Example
Tj = 150°C
Time
Main Voltage
Main Voltage
(dv/dt)c
V
D
(dv/dt)c
V
D
Main Current
Main Current
I = 4A
T
τ = 500µs
I = 4A
T
τ = 500µs
(di/dt)c
Time
(di/dt)c
Time
I
T
I
T
τ
3
2
3
2
τ
V
= 200V
V = 200V
D
f = 3Hz
D
f = 3Hz
101
7
101
7
III Quadrant
I Quadrant
5
5
I Quadrant
III Quadrant
Minimum
Characteristics
Value
3
2
3
2
Minimum
Characteristics
Value
100
100
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
100 2 3 5 7101 2 3 5 7102 2 3 5 7103
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G1557-0100 Rev.1.00 Jul 06, 2007
Page 5 of 7
BCR3PM-14LG
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
Typical Example
I
RGT III
5
I
RGT I
3
2
I
FGT I
102
7
5
3
2
101
100
2
3
5 7 101
2
3
5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
Recommended Circuit Values Around The Triac
Load
C1
R1
A
A
6V
6V
C0 R0
330Ω
330Ω
V
V
C = 0.1 to 0.47µF C = 0.1µF
0
R = 100Ω
1
R = 47 to 100Ω
Test Procedure I
Test Procedure II
1
0
6Ω
A
6V
330Ω
V
Test Procedure III
REJ03G1557-0100 Rev.1.00 Jul 06, 2007
Page 6 of 7
BCR3PM-14LG
Package Dimensions
Package Name
TO-220F
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-A
Previous Code
MASS[Typ.]
2.0g
Unit: mm
10.5Max
5.2
2.8
φ3.2 0.2
1.3Max
0.8
2.54
2.54
0.5
2.6
Order Code
Standard order
code example
Lead form
Standard packing
Quantity
Standard order code
Straight type
Lead form
Vinyl sack
Plastic Magazine (Tube)
100 Type name
50 Type name – Lead forming code
BCR3PM-14LG
BCR3PM-14LG-A8
Note : Please confirm the specification about the shipping in detail.
REJ03G1557-0100 Rev.1.00 Jul 06, 2007
Page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
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