BCR400WE6327 [INFINEON]
Analog Circuit, 1 Func, BIPolar, PDSO4, SOT-343, 4 PIN;
| 型号： | BCR400WE6327 |
| 厂家： | 
Infineon |
| 描述： | Analog Circuit, 1 Func, BIPolar, PDSO4, SOT-343, 4 PIN 光电二极管 |
| 文件： | 总9页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR400W
Active Bias Controller
Characteristics
• Supplies stable bias current even at low battery
• Low voltage drop of 0.7V
3
2
1
4
Application notes
4
3
• Stabilizing bias current of NPN transistors
and FET's from less than 0.2mA up to
more than 200mA
• Ideal supplement for Sieget and other transistors
• also usable as current source up to 5mA
1
2
EHA07188
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
BCR400W W4s
Marking
Pin Configuration
2=Contr/B 3V
Package
4=Rext/C SOT343
1=GND/E
NPN
, B
NPN
S
NPN
(E
, C
are electrodes of a stabilized NPN transistor)
NPN NPN NPN
Maximum Ratings
Parameter
Source voltage
Control current
Control voltage
Symbol
Value
18
10
Unit
V
mA
V
V
S
I
Contr.
V
16
Contr.
R
Reverse voltage between all terminals
V
P
0.5
330
150
mW
°C
Total power dissipation, T = 117 °C
Junction temperature
tot
S
T
j
Storage temperature
T
-65 ... 150
stg
Thermal Resistance
Junction - soldering point
2)
R
≤ 100
K/W
thJS
1
2
Pb-containing package may be available upon special request
For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-05-29
1
BCR400W
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
I
Additional current consumption
-
-
20
40
-
µA
0
V = 3 V
S
I
Lowest stabilizing current
0.1
mA
min
V = 3 V
S
DC Characteristics with stabilized NPN-Transistors
V
Lowest sufficient battery voltage
-
-
-
-
-
1.6
0.65
0.08
0.15
0.2
-
-
-
-
-
V
Smin
I (NPN) < 0.5mA
B
V
Voltage drop (V - V )
drop
S
CE
I = 25 mA
C
∆h
/
Change of I versus h
∆I /I
C C
FE
C
FE
h
FE
h
= 50
FE
∆V /V
Change of I versus V
∆I /I
C C
S
S
C
S
A
V = 3 V
S
Change of I versus T
%/K
∆I /I
C
C C
2007-05-29
2
BCR400W
Collector current I = f (h )
Collector Current I = f (V )
C S
C
FE
I and h refer to stabilized NPN Transistor
of stabilized NPN Transistor
C
FE
Parameter R
(Ω)
Parameter R
(Ω)
ext.
ext.
10 3
10 3
2.1
mA
mA
5.9
5.9
10 2
10 1
10 0
10 -1
10 2
10 1
10 0
12.4
67
67
760
760
4.3k
10 -1
0
-
V
0
50
100
150
200
250
350
FE
2
4
6
8
11
h
V
S
Voltage drop V
= f (I )
C
Collector current I = f (R
)
ext.
drop
C
of stabilized NPN Transistor
10 3
mA
2
V
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
10 2
10 1
10 0
10 -1
0.9
0.8
0.7
0.6
-2
3
10
10 -1
10 0
10 1
10 2
10 0
10 1
10 2
10 3
0.5
4
mA
0
Ohm
I
R
C
ext.
2007-05-29
3
BCR400W
Control current I = f (R
)
Collector current T = f (I )
ext.
A
C
in current source application
of stabilized NPN Transistor
Parameter: R (Ω)
ext.
10 1
10 3
mA
2.2
6
mA
10 2
10 1
10 0
10 -1
26
65
10 0
290
760
4.3k
10 -1
10 -1
10 0
10 1
10 2
KOhm
°C
-40 -20
0
20 40 60 80 100 120
160
R
T
ext.
A
Control current I = f (T )
Control current I = f (V )
A
S
in current source application
in current source application
2.2
mA
1.5
mA
1.8
1.6
1.4
1.2
1
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.6
0.4
0.2
0
°C
V
-20
0
20
40
60
80
110
0
2
4
6
8
11
T
V
S
A
2007-05-29
4
BCR400W
Total power dissipation P = f (T )
tot
S
400
mW
Note that up to T =115°C
it is not possible to exceed P
S
tot
respecting the maximum
ratings of V and I
The collector or drain
300
250
200
150
100
50
S
Contr.
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
0
°C
0
20
40
60
80
100 120
150
T
S
Typical application for GaAs FET
with active bias controller
RF IN
RF OUT
100 pF
BCR 400
100 kΩ
100 kΩ
1
4
3
Rext
2
1 nF
- VG
+VS
EHA07190
2007-05-29
5
BCR400W
RF transistor controlled by BCR400
+V S
BCR 400
3
Rext.
Vdrop
4
Be aware that BCR400 stabilized
bias current of transistors in an active
control loop
Ι C
1
2
C 1
C 2
In order to avoid loop ascillation
(hunting),
time constants must be chosen
adequately, i.e. C1 >= 10 x C2
RF OUT
Ι contr.
RF IN
RF-Transistor
EHA07217
RX/TX antenna switch, compatible to control logic
and working at wide battery voltage range
Antenna
λ / 4
TX
RX
BCR 400
Rext = 100 Ω - 220 Ω
RX
TX
1
4
3
2
+VS > 2.7 V
EHA07218
2007-05-29
6
BCR400W
Low voltage reference
BCR 400
1
4
3
2
+VS
Red
LED
VREF
EHA07219
Precision timer with BCR400
providing constant charge current
+VS
BCR 400
3
2
Rext
Timer IC
(555)
8
1
4
5
7
4
1
3
6
2
EHA07191
2007-05-29
7
Package SOT343
BCR400W
Package Outline
±0.1
0.9
±0.2
2
0.1 MAX.
0.1
1.3
A
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BGA420
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
2007-05-29
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BCR400W
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-05-29
9
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