BCR400WE6327HTSA1 [INFINEON]
Analog Circuit, 1 Func, PDSO4, SOT-343, 4 PIN;
| 型号： | BCR400WE6327HTSA1 |
| 厂家： | 
Infineon |
| 描述： | Analog Circuit, 1 Func, PDSO4, SOT-343, 4 PIN 光电二极管 |
| 文件： | 总9页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR400W
Active Bias Controller
3
Characteristics
4
Supplies stable bias current even at low battery
voltage and extreme ambient temperature variation
Low voltage drop of 0.7V
2
Application notes
VPS05605
1
Stabilizing bias current of NPN transistors
and FET's from less than 0.2mA up to
more than 200mA
4
3
Ideal supplement for Sieget and other transistors
also usable as current source up to 5mA
1
2
EHA07188
Type
Marking
Pin Configuration
2=Contr/B 3V
Package
BCR400W W4s
1=GND/E
4=Rext/C SOT343
NPN
NPN
NPN
S
(E are electrodes of a stabilized NPN transistor)
, B
, C
NPN NPN NPN
Maximum Ratings
Parameter
Symbol
Value
18
Unit
V
Source voltage
Control current
Control voltage
V
S
I
10
mA
V
Contr.
V
16
Contr.
R
Reverse voltage between all terminals
V
P
0.5
330
150
mW
°C
Total power dissipation, T = 117 °C
tot
S
Junction temperature
Storage temperature
T
j
T
stg
-65 ... 150
Thermal Resistance
1)
Junction - soldering point
R
100
K/W
thJS
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
1
Aug-07-2001
BCR400W
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
I
Additional current consumption
-
-
20
40
-
µA
0
V = 3 V
S
I
Lowest stabilizing current
0.1
mA
min
V = 3 V
S
DC Characteristics with stabilized NPN-Transistors
V
Lowest sufficient battery voltage
-
-
-
-
-
1.6
0.65
0.08
0.15
0.2
-
-
-
-
-
V
Smin
I (NPN) < 0.5mA
B
V
Voltage drop (V - V
)
drop
S
CE
I = 25 mA
C
h
/
Change of I versus h
I /I
FE
C
FE
C C
h
FE
h
= 50
FE
V /V
Change of I versus V
I /I
S
S
C
S
C C
V = 3 V
S
Change of I versus T
%/K
I /I
C
A
C C
2
Aug-07-2001
BCR400W
Collector current I = f (h )
Collector Current I = f (V )
C S
C
FE
I and h refer to stabilized NPN Transistor
of stabilized NPN Transistor
C
FE
Parameter R
( )
Parameter R
( )
ext.
ext.
10 3
10 3
2.1
mA
mA
5.9
5.9
10 2
10 1
10 0
10 -1
10 2
10 1
10 0
12.4
67
67
760
760
4.3k
10 -1
0
-
V
0
50
100
150
200
250
350
FE
2
4
6
8
11
h
V
S
Voltage drop V
= f (I )
C
Collector current I = f (R
)
ext.
C
drop
of stabilized NPN Transistor
10 3
mA
2
V
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
10 2
10 1
10 0
10 -1
0.9
0.8
0.7
0.6
-2
3
10
10 -1
10 0
10 1
10 2
10 0
10 1
10 2
10 3
0.5
4
mA
Ohm
I
R
C
ext.
3
Aug-07-2001
BCR400W
Control current I = f (R
)
Collector current T = f (I )
ext.
A
C
in current source application
of stabilized NPN Transistor
Parameter: R ( )
ext.
10 1
10 3
mA
2.2
6
mA
10 2
10 1
10 0
10 -1
26
65
10 0
290
760
4.3k
10 -1
10 -1
10 0
10 1
10 2
KOhm
°C
-40 -20
0
20 40 60 80 100 120
160
R
T
ext.
A
Control current I = f (T )
Control current I = f (V )
A
S
in current source application
in current source application
2.2
mA
1.5
mA
1.8
1.6
1.4
1.2
1
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.6
0.4
0.2
0
°C
V
-20
0
20
40
60
80
110
0
2
4
6
8
11
T
V
S
A
4
Aug-07-2001
BCR400W
Total power dissipation P = f (T )
tot
S
400
mW
Note that up to T =115°C
S
it is not possible to exceed P
tot
respecting the maximum
ratings of V and I
300
250
200
150
100
50
S
Contr.
The collector or drain
current (respectively) of
the stabilized RF transistor
does not affect BCR 400
directly, as it provides just the
base current.
0
°C
0
20
40
60
80
100 120
150
T
S
Typical application for GaAs FET
with active bias controller
RF IN
RF OUT
100 pF
BCR 400
1
100 kΩ
4
3
Rext
2
100 kΩ
1 nF
- VG
+VS
EHA07190
5
Aug-07-2001
BCR400W
RF transistor controlled by BCR400
+V S
BCR 400
3
Rext.
Vdrop
4
Be aware that BCR400 stabilized
bias current of transistors in an active
control loop
Ι C
1
2
C 1
C 2
In order to avoid loop ascillation
(hunting),
time constants must be chosen
adequately, i.e. C1 >= 10 x C2
RF OUT
Ι contr.
RF IN
RF-Transistor
EHA07217
RX/TX antenna switch, compatible to control logic
and working at wide battery voltage range
Antenna
λ / 4
TX
RX
BCR 400
1
Rext = 100 Ω - 220 Ω
RX
TX
4
3
2
+VS > 2.7 V
EHA07218
6
Aug-07-2001
BCR400W
Low voltage reference
BCR 400
1
4
3
2
+VS
Red
LED
VREF
EHA07219
Precision timer with BCR400
providing constant charge current
+VS
BCR 400
3
2
Rext
Timer IC
(555)
8
7
4
5
4
1
3
6
2
1
EHA07191
7
Aug-07-2001
Package SOT343
Package Outline
±0.1
0.9
±0.2
2
1.3
0.1 MAX.
0.1
A
+0.2
acc. to
DIN 6784
4
1
3
2
0.15
+0.1
+0.1
-0.05
0.3
0.15
-0.05
+0.1
0.6
4x
-0.05
M
0.2
A
M
0.1
Foot Print
0.6
1.15
0.9
Marking Layout
Manufacturer
Pin 1
Type code
BGA420
Example
Packing
Code E6327: Reel ø180 mm = 3.000 Pieces/Reel
Code E6433: Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
2.15
Pin 1
1.1
Impressum
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
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Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
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