BCR3PM-8 [MITSUBISHI]
TRIAC, 400V V(DRM), 3A I(T)RMS,;
| 型号： | BCR3PM-8 |
| 厂家： | 
Mitsubishi Group |
| 描述： | TRIAC, 400V V(DRM), 3A I(T)RMS, 局域网 栅 三端双向交流开关 栅极 |
| 文件： | 总5页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Dimensions
in mm
BCR3PM
OUTLINE DRAWING
10.5 MAX
5.2
2.8
TYPE
NAME
φ3.2±0.2
1.3 MAX
VOLTAGE
CLASS
0.8
2.54
2.54
0.5
2.6
Measurement point of
case temperature
• IT (RMS) ........................................................................3A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (10mA)
1 2 3
2
1
✽5
T
T
1
2
TERMINAL
TERMINAL
1
2
3
• Viso........................................................................ 1500V
• UL Recognized: File No. E80276
3
GATE TERMINAL
TO-220F
APPLICATION
Contactless AC switches, light dimmer, electric blankets,
control of household equipment such as electric fan,
solenoid drivers, small motor control,
other general purpose control applications
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
8
12
✽1
VDRM
VDSM
Repetitive peak off-state voltage
400
500
600
720
V
V
✽1
Non-repetitive peak off-state voltage
Symbol
Parameter
RMS on-state current
Surge on-state current
Conditions
Ratings
3.0
Unit
A
IT (RMS)
ITSM
Commercial frequency, sine full wave 360° conduction, Tc=107°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
30
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
3.7
A s
PGM
PG (AV)
VGM
IGM
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
3
0.3
W
W
V
6
Peak gate current
0.5
A
Tj
Junction temperature
Storage temperature
Weight
–40 ~ +125
–40 ~ +125
2.0
°C
°C
g
Tstg
—
Typical value
Viso
Isolation voltage
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
1500
V
✽1. Gate open.
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.5
1.5
1.5
1.5
mA
V
IDRM
Repetitive peak off-state current
On-state voltage
Tj=125°C, VDRM applied
VTM
Tc=25°C, ITM=4.5A, Instantaneous measurement
—
!
@
#
!
@
#
—
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
V
✽2
—
V
Gate trigger voltage
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
—
V
✽5
—
30
30
30
—
mA
mA
mA
V
✽5
✽5
✽2
—
Gate trigger current
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
—
0.2
—
Gate non-trigger voltage
Thermal resistance
✽4
4.5
°C/W
Rth (j-c)
Junction to case
Critical-rate of rise of off-state
commutating voltage
✽3
—
—
V/µs
(dv/dt)c
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
✽5. High sensitivity (IGT≤10mA) is also available.
(dv/dt) c
Voltage
class
VDRM
(V)
Commutating voltage and current waveforms
(inductive load)
Test conditions
Min.
Unit
SUPPLY
VOLTAGE
1. Junction temperature
Tj=125°C
TIME
8
400
600
2. Rate of decay of on-state commutating current
(di/dt)c=–1.5A/ms
(di/dt)c
MAIN CURRENT
5
V/µs
TIME
TIME
MAIN
VOLTAGE
3. Peak off-state voltage
VD=400V
12
(dv/dt)c
VD
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
102
40
35
30
25
20
15
10
5
7
5
TC = 25°C
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
102
7
TYPICAL EXAMPLE
7
5
5
4
3
3
2
I
RGT III
PGM = 3W
P
G(AV) = 0.3W
101
7
5
3
2
2
I
GM =
0.5A
102
7
VGT
I
FGT I, IRGT I
100
7
5
5
4
3
3
2
I
RGT I
2
I
FGT I,
I
RGT III
VGD = 0.2V
10–1
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
–60–40–20 0 20 40 60 80 100120140
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3 5 7
103
5.0
TYPICAL EXAMPLE
7
5
4
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
3
2
102
7
5
4
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
5.0
130
120
110
100
90
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
360°
CURVES APPLY
REGARDLESS
OF CONDUCTION ANGLE
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
80
70
360°
60
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
50
40
30
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
160
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
140
120
100
80
140
120 120 t2.3
100 100 t2.3
120
100
80
60
40
20
0
RESISTIVE, INDUCTIVE LOADS
60 60 t2.3
NATURAL CONVECTION
CURVES APPLY
REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE,
60
40
20
INDUCTIVE
LOADS
0
0
1
2
3
4
5
6
7
8
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
105
7
103
7
5
4
TYPICAL EXAMPLE
TYPICAL EXAMPLE
5
3
2
3
104
7
5
3
2
2
102
7
103
7
5
5
4
3
3
2
2
102
101
–60–40–20 0 20 40 60 80 100120140
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
103
160
7
5
TYPICAL EXAMPLE
DISTRIBUTION
T+, G–
TYPICAL
EXAMPLE
2
140
120
100
80
3
2
102
7
5
3
2
60
101
7
5
40
3
2
T+
2
, G+ TYPICAL
, G– EXAMPLE
20
T–
2
100
0
–60–40–20 0 20 40 60 80 100120140
–60–40–20 0 20 40 60 80 100120140
JUNCTION TEMPERATURE (°C)
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
COMMUTATION CHARACTERISTICS
160
140
120
100
80
102
VOLTAGE WAVEFORM
TYPICAL
TYPICAL EXAMPLE
7
5
4
t
Tj = 125°C
EXAMPLE
V
D
(dv/dt)
C
T
j
= 125°C
CURRENT WAVEFORM
I
T = 4A
3
(di/dt)
C
τ = 500µs
= 200V
I
T
2
V
D
τ
t
f = 3Hz
101
7
I QUADRANT
60
5
4
3
III QUADRANT
40
III QUADRANT
I QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
2
20
100
0
100
2
3 4 5 7 101
2
3 4 5 7 102
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
103
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
6Ω 6Ω
TYPICAL EXAMPLE
7
I
RGT III
5
4
3
A
A
I
RGT I
FGT I
6V
6V
R
G
RG
V
V
I
2
102
7
5
4
TEST PROCEDURE 1 TEST PROCEDURE 2
6Ω
3
2
A
6V
RG
101
V
100
2
3 4 5 7 101
2
3 4 5 7 102
TEST PROCEDURE 3
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
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