BCR12KM-14LA [RENESAS]
Triac Medium Power Use; 三端双向可控硅中功率使用
| 型号： | BCR12KM-14LA |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Triac Medium Power Use |
| 文件： | 总8页 (文件大小：139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCR12KM-14LA
Triac
Medium Power Use
REJ03G0335-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
IT (RMS) : 12 A
VDRM : 700 V
•
•
•
Insulated Type
Planar Passivation Type
UL Recognized : Yellow Card No. E223904
File No. E80271
I
FGTI , IRGTI, IRGT : 30 mA
Ⅲ
Viso : 2000 V
Outline
TO-220FN
2
1. T Terminal
1
2. T Terminal
2
3. Gate Terminal
3
1
1
2
3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
14
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
700
840
V
V
Rev.1.00, Aug.20.2004, page 1 of 7
BCR12KM-14LA
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
Surge on-state current
I2t for fusing
IT (RMS)
12
A
Commercial frequency, sine full wave
360° conduction, Tc = 77°C
ITSM
I2t
120
60
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction temperature
Storage temperature
Mass
Tj
– 40 to +125
– 40 to +125
2.0
°C
°C
g
Tstg
—
Typical value
Isolation voltage
Viso
2000
V
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
Max.
2.0
Unit
mA
V
Test conditions
—
—
Tj = 125°C, VDRM applied
VTM
—
1.6
Tc = 25°C, ITM = 20 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
Ι
VFGT
—
—
—
—
—
—
0.2
—
10
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
30
30
—
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VRGT
Ι
VRGT
V
ΙΙΙ
Gate trigger currentNote2
IFGT
mA
mA
mA
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
ΙΙ
ΙΙΙ
IRGT
Ι
IRGT
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
VGD
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Rth (j-c)
(dv/dt)c
3.3
—
°C/W
V/µs
Critical-rate of rise of off-state
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = – 6 A/ms
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
Rev.1.00, Aug.20.2004, page 2 of 7
BCR12KM-14LA
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
5
200
180
160
140
120
100
80
3
2
Tj = 125°C
101
7
5
3
2
Tj = 25°C
100
7
60
5
40
3
2
20
10–1
0
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3 4 5 7 101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
7
102
7
5
Typical Example
5
4
3
2
V
= 10V
GM
I
, I
RGT I RGT III
3
2
P
= 5W
101
7
5
GM
P
=
G(AV)
0.5W
I
= 2A
GM
102
7
3
2
V
= 1.5V
GT
I
FGT I
100
7
5
4
5
3
2
3
2
I
I
, I
FGT I RGT III
V
= 0.2V
RGT I
GD
101
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–60–40–20 0 20 40 60 80 100120140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102 2 3 5 7 103 2 3 5
4.0
103
Typical Example
7
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
4
3
2
102
7
5
4
3
2
101
–60–40–20 0 20 40 60 80 100120140
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
Rev.1.00, Aug.20.2004, page 3 of 7
BCR12KM-14LA
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
103
7
5
16
No Fins
14
12
10
8
3
2
102
7
360° Conduction
Resistive,
inductive loads
5
3
2
101
7
5
3
2
6
100
7
4
5
3
2
2
10–1
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
0
2
4
6
8
10 12 14 16
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
120
100
80
All fins are black painted
aluminum and greased
Curves apply regardless
of conduction angle
140
120
100
80
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
60
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
40
360° Conduction
20 Resistive,
20
inductive loads
0
0
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
105
7
5
160
140
120
100
80
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
3
2
104
7
5
3
2
60
103
7
5
40
3
2
20
102
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
–60–40–20 0 20 40 60 80 100120140
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 4 of 7
BCR12KM-14LA
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
103
7
103
7
5
Typical Example
5
4
Distribution
3
2
–
, G
+
T
2
Typical Example
3
2
102
7
5
102
7
3
2
101
7
5
4
5
3
2
3
2
+
–
+
–
T
T
, G
, G
2
Typical Example
40 80
2
101
100
–40
–60–40–20 0 20 40 60 80 100120140
0
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
160
140
120
100
80
Typical Example
Tj = 125°C
Typical Example
140
120
100
80
# 2
III Quadrant
60
60
# 1
40
40
20
20
I Quadrant
0
0
–60–40–20 0 20 40 60 80 100120140
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics
103
Time
Typical Example
Tj = 125°C
3
2
Main Voltage
(dv/dt)c
Main Current
Typical Example
7
V
D
I
FGT I
5
4
I = 4A
T
τ = 500µs
102
7
5
(di/dt)c
Time
I
T
I
τ
RGT I
3
2
I
V
= 200V
RGT III
D
f = 3Hz
3
2
102
7
101
7
I Quadrant
5
5
4
Minimum
Characteristics
Value
3
2
3
2
100
7
III Quadrant
5
101
100
2
3 4 5 7 101
2
3
2
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
4
5 7 10
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Rev.1.00, Aug.20.2004, page 5 of 7
BCR12KM-14LA
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
A
6V
6V
330Ω
330Ω
V
V
Test Procedure I
Test Procedure II
6Ω
A
6V
330Ω
V
Test Procedure III
Rev.1.00, Aug.20.2004, page 6 of 7
BCR12KM-14LA
Package Dimensions
TO-220FN
EIAJ Package Code
Mass (g) (reference value)
2.0
Lead Material
Cu alloy
JEDEC Code
2.8 0.2
10 0.3
φ 3.2 0.2
1.1 0.2
1.1 0.2
0.75 0.15
2.54 0.25
0.75 0.15
2.54 0.25
Dimension in Millimeters
Min Typ Max
Symbol
A
A
A
b
1
2
D
E
e
x
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
y
y1
ZD
ZE
Order Code
Standard order
code example
Lead form
Standard packing
Quantity
Standard order code
Straight type
Lead form
Plastic Magazine (Tube)
Plastic Magazine (Tube)
50 Type name
50 Type name – Lead forming code
BCR12KM-14LA
BCR12KM-14LA-A8
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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