BCR12LM-12LDB00 [RENESAS]
600V - 12A - Triac Medium Power Use; 600V - 12A - 三端双向可控硅中等功率应用
| 型号： | BCR12LM-12LDB00 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 600V - 12A - Triac Medium Power Use |
| 文件： | 总8页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
BCR12LM-12LD
600V - 12A - Triac
R07DS0983EJ0100
Rev.1.00
Dec 20, 2012
Medium Power Use
Features
IT (RMS) : 12 A
DRM : 600 V
FGTI, IRGTI, IRGT: 50 mA
Viso: 1800V
Insulated Type
Planar Passivation Type
Tj: 150 °C
V
I
UL Recognized: File No. E223904
Outline
RENESAS Package code: PRSS0003AF-A)
Package name: TO-220FL)
(
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Heater control, motor control
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
600
700
V
V
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
12
A
Commercial frequency, sine full wave
360 conduction, Tc = 77C
Surge on-state current
I2t for fusion
72
A
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
21.6
A2s
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction Temperature
Storage temperature
Mass
Tj
–40 to +150
–40 to +150
1.5
C
C
g
Tstg
—
Typical value
Isolation voltage Note5
Viso
1800
V
Ta = 25C, AC 1 minute
T1 T2 G terminal to case
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 1 of 7
BCR12LM-12LD
Preliminary
Electrical Characteristics
Rated value
Parameter
Symbol
Unit
Test conditions
Min.
—
Typ.
—
Max.
2.0
Repetitive peak off-state current
On-state voltage
IDRM
VTM
mA
V
Tj = 150C, VDRM applied
—
—
1.8
Tc = 25C, ITM = 20A,
instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
50
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
VRGT
V
Gate trigger curentNote2
IFGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
IRGT
50
IRGT
50
Gate non-trigger voltage
Thermal resistance
VGD
0.2
—
—
—
—
—
4.3
—
V
Tj = 125C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
Rth (j-c)
(dv/dt)c
C/W
V/s
Critical-rate of rise of off-state
commutation voltageNote4
10
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C /W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = –6 A/ms
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 2 of 7
BCR12LM-12LD
Preliminary
Main Characteristics
Maximum On-State Characteristics
Rated Surge On-State Current
102
100
80
60
40
20
0
Tj = 25°C
101
100
10−1
0
1
2
3
4
100
101
102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
102
103
102
101
Typical Example
V
= 10 V
I
RGT III
GM
P
= 5 W
GM
101
P
G(AV)
= 0.5 W
V
= 1.5 V
GT
I
FGT I
I
= 2 A
GM
100
I
I
I
FGT I
I
RGT I
RGT I
RGT III
V
= 0.2 V
GD
10−1
101
102
103
104
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
103
102
101
5
Typical Example
4
3
2
1
0
10−1
100
101
102
–40
0
40
80
120
160
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 3 of 7
BCR12LM-12LD
Preliminary
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
20
103
102
No Fins
16
12
8
360° Conduction
Resistive,
inductive loads
101
100
4
10−1
0
101
102
103
104
105
0
2
4
6
8
10 12 14 16
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
Curves apply regardless
of conduction angle
All fins are black painted
aluminum and greased
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
60
60
Curves apply
regardless of
40
40
conduction angle
Resistive,
360° Conduction
Resistive,
inductive loads
20
20
inductive loads
Natural convection
0
0
0
0
2
4
6
8
10 12 14 16
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
140
120
100
80
106
105
104
103
102
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
60
40
20
0
0
0.5 1.0 1.5 2.0 2.5 3.0
RMS On-State Current (A)
–40
0
40
80
120
160
Junction Temperature (°C)
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 4 of 7
BCR12LM-12LD
Preliminary
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
103
102
101
100
103
Typical Example
Distribution
–
+
T
, G
Typical Example
2
102
+
+
T
2
, G
Typical Example
–
–
T
, G
Typical Example
2
101
−40
0
40
80
120
160
–40
0
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
160
140
120
100
80
160
Typical Example
Typical Example
Tj = 125°C
140
120
100
80
III Quadrant
60
60
I Quadrant
40
40
20
20
0
−40
0
0
40
80
120
160
101
102
103
104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj=125°C)
102
160
Typical Example
Tj = 125°C
I = 4A
Typical Example
Tj = 150°C
140
120
100
80
T
III Quadrant
τ = 500μs
V = 200V
III Quadrant
D
f = 3Hz
101
Minimum
Value
I Quadrant
60
Time
Main
Voltage
I Quadrant
40
(dv/dt)c
V
D
Main
Current
(di/dt)c
Time
I
T
20
τ
100
100
0
101
102
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 5 of 7
BCR12LM-12LD
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics (Tj=150°C)
102
101
100
103
102
101
Typical Example
Tj = 150°C
I = 4A
Typical Example
I
RGT III
T
I
RGT I
τ = 500μs
= 200V
III Quadrant
I Quadrant
V
D
f = 3Hz
I
FGT I
Time
Main
Voltage
(dv/dt)c
V
D
Main
Current
(di/dt)c
Time
I
T
τ
100
101
102
100
101
Gate Current Pulse Width (μs)
102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
A
A
6V
6V
330Ω
330Ω
V
V
Test Procedure I
6Ω
Test Procedure II
A
6V
330Ω
V
Test Procedure III
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 6 of 7
BCR12LM-12LD
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
RENESAS Code
PRSS0003AF-A
Previous Code
TO-220FL
MASS[Typ.]
1.5g
Unit: mm
⎯
10.0 0.3
2.8 0.2
3.2 0.2
1.15 0.2
1.15 0.2
0.75 0.15
2.54 0.25
0.40 0.15
2.54 0.25
Ordering Information
Orderable Part Number
BCR12LM-12LD#B00
BCR12LM-12LDA8#B00
Packing
Quantity
50 pcs. Straight type
50 pcs. A8 Lead form
Remark
Tube
Tube
Note: Please confirm the specification about the shipping in detail.
R07DS0983EJ0100 Rev.1.00
Dec 20, 2012
Page 7 of 7
SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/" for the latest and detailed information.
Renesas Electronics America Inc.
2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A.
Tel: +1-408-588-6000, Fax: +1-408-588-6130
Renesas Electronics Canada Limited
1101 Nicholson Road, Newmarket, Ontario L3Y 9C3, Canada
Tel: +1-905-898-5441, Fax: +1-905-898-3220
Renesas Electronics Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K
Tel: +44-1628-651-700, Fax: +44-1628-651-804
Renesas Electronics Europe GmbH
Arcadiastrasse 10, 40472 Düsseldorf, Germany
Tel: +49-211-65030, Fax: +49-211-6503-1327
Renesas Electronics (China) Co., Ltd.
7th Floor, Quantum Plaza, No.27 ZhiChunLu Haidian District, Beijing 100083, P.R.China
Tel: +86-10-8235-1155, Fax: +86-10-8235-7679
Renesas Electronics (Shanghai) Co., Ltd.
Unit 204, 205, AZIA Center, No.1233 Lujiazui Ring Rd., Pudong District, Shanghai 200120, China
Tel: +86-21-5877-1818, Fax: +86-21-6887-7858 / -7898
Renesas Electronics Hong Kong Limited
Unit 1601-1613, 16/F., Tower 2, Grand Century Place, 193 Prince Edward Road West, Mongkok, Kowloon, Hong Kong
Tel: +852-2886-9318, Fax: +852 2886-9022/9044
Renesas Electronics Taiwan Co., Ltd.
13F, No. 363, Fu Shing North Road, Taipei, Taiwan
Tel: +886-2-8175-9600, Fax: +886 2-8175-9670
Renesas Electronics Singapore Pte. Ltd.
80 Bendemeer Road, Unit #06-02 Hyflux Innovation Centre Singapore 339949
Tel: +65-6213-0200, Fax: +65-6213-0300
Renesas Electronics Malaysia Sdn.Bhd.
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No. 18, Jln Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: +60-3-7955-9390, Fax: +60-3-7955-9510
Renesas Electronics Korea Co., Ltd.
11F., Samik Lavied' or Bldg., 720-2 Yeoksam-Dong, Kangnam-Ku, Seoul 135-080, Korea
Tel: +82-2-558-3737, Fax: +82-2-558-5141
© 2012 Renesas Electronics Corporation. All rights reserved.
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