BCR12LM-14LD [RENESAS]
Triac Medium Power Use; 三端双向可控硅中功率使用
| 型号： | BCR12LM-14LD |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Triac Medium Power Use |
| 文件： | 总8页 (文件大小：101K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Datasheet
BCR12LM-14LD
Triac
R07DS0571EJ0100
Rev.1.00
Dec 20, 2011
Medium Power Use
Features
IT (RMS) : 12 A
DRM : 700 V
FGTI, IRGTI, IRGT III : 50 mA
iso : 1800V
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized : File No. E223904
V
I
V
Outline
RENESAS Package code: PRSS0003AF-A)
Package name: TO-220FL)
(
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose AC power
control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
Conditions
14
Repetitive peak off-state voltageNote1
VDRM
800
700
800
V
V
V
Tj = 125C
Tj = 150C
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
VDSM
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
IT (RMS)
ITSM
I2t
12
A
Commercial frequency, sine full wave
360 conduction, Tc = 77C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Surge on-state current
I2t for fusion
72
A
21.6
A2s
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
0.5
10
2
W
W
V
Peak gate current
A
Junction Temperature
Storage temperature
Mass
Tj
Tstg
—
–40 to +150
–40 to +150
1.5
C
C
g
Typical value
Isolation voltage
Viso
1800
V
Ta = 25C, AC 1 minute,
T1 T2 G terminal to case
R07DS0571EJ0100 Rev.1.00
Dec 20, 2011
Page 1 of 7
BCR12LM-14LD
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
Tj = 150C, VDRM applied
VTM
—
—
1.75
Tc = 25C, ITM = 20 A,
instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
50
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
VRGT
V
Gate trigger curentNote2
IFGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
IRGT
50
IRGT
50
Gate non-trigger voltage
Thermal resistance
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
V
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
V
Rth (j-c)
4.3
—
C/W
V/s
V/s
Critical-rate of rise of off-state
commutation voltageNote4
(dv/dt)c
—
Tj = 150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of decay of off-state commutation voltage are shown in the table below.
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C/150°C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = – 6 A/ms
Time
Main Current
Main Voltage
Time
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS0571EJ0100 Rev.1.00
Dec 20, 2011
Page 2 of 7
BCR12LM-14LD
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
101
100
80
70
60
50
40
30
20
10
0
Tj = 150°C
Tj = 25°C
10−1
100
101
102
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
103
102
101
102
101
100
Typical Example
V
= 10 V
GM
I
RGT III
P
= 5 W
GM
P
G(AV)
= 0.5 W
V
= 1.5 V
I
GT
FGT I
I
= 2 A
GM
I
I
I
FGT I
I
RGT I
RGT I
RGT III
V
= 0.2 V
GD
10−1
101
102
103
104
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
103
104
103
102
101
5
Typical Example
4
5
2
1
0
10–1
100
101
102
–40
0
40
80
120
160
Junction Temperature (°C)
Conduction Time (Cycles at 60 Hz)
R07DS0571EJ0100 Rev.1.00
Dec 20, 2011
Page 3 of 7
BCR12LM-14LD
Preliminary
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
20
103
102
No Fins
16
360° Conduction
Resistive,
12 inductive loads
101
8
4
0
100
10−1
101
102
103
104
105
0
2
4
6
8
10 12 14 16
RMS On-State Current (A)
Conduction Time (Cycles at 60Hz)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
140
120
100
80
160
140
120
100
80
All fins are black painted
aluminum and greased
Curves apply regardless
of conduction angle
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
60
60
Curves apply
regardless of
conduction angle
Resistive,
inductive loads
Natural convection
40
40
360° Conduction
Resistive,
inductive loads
20
20
0
0
0
0
2
4
6
8
10 12 14 16
2
4
6
8
10 12 14 16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
106
160
140
120
100
80
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Typical Example
105
104
103
102
60
40
20
0
0
0.5 1.0
1.5 2.0 2.5
3.0
–40
0
40
80
120
160
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0571EJ0100 Rev.1.00
Dec 20, 2011
Page 4 of 7
BCR12LM-14LD
Preliminary
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
103
102
101
100
103
Typical Example
Distribution
–
+
T
, G
2
Typical Example
102
–
–
T
, G
2
+
+
, G
Typical Example
T
2
Typical Example
101
–40
0
40
80
120
160
–40
0
40
80 120 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Junction Temperature
160
140
120
100
80
160
Typical Example
Typical Example
Tj = 125°C
140
120
100
80
III Quadrant
I Quadrant
60
60
40
40
20
20
0
–40
0
0
40
80
120
160
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
102
Typical Example
Tj = 150°C
Time
Main Voltage
(dv/dt)c
Main Current
V
D
140
(di/dt)c
Time
I
T
120
III Quadrant
τ
100
I Quadrant
Minimum
Value
101
80
I Quadrant
60
40
20
0
III Quadrant
Typical Example
Tj = 125°C, I = 4A
T
τ = 500μs, V = 200V, f = 3Hz
D
100
100
101
102
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0571EJ0100 Rev.1.00
Dec 20, 2011
Page 5 of 7
BCR12LM-14LD
Preliminary
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics (Tj=150°C)
103
102
101
3
III Quadrant
Typical Example
Time
Main Voltage
(dv/dt)c
Main Current
I
V
D
FGT I
101
3
(di/dt)c
Time
I
RGT I
I
T
τ
I
RGT III
I Quadrant
Minimum
Value
100
3
Typical Example
Tj = 150°C, I = 4A, τ = 500µs
T
V
D
= 200V, f = 3Hz
100
101
102
100
101
Gate Current Pulse Width (µs)
102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
6Ω 6Ω
A
A
6V
6V
330Ω
330Ω
V
V
Test Procedure II
Test Procedure I
6Ω
A
6V
330Ω
V
Test Procedure III
R07DS0571EJ0100 Rev.1.00
Dec 20, 2011
Page 6 of 7
BCR12LM-14LD
Preliminary
Package Dimensions
Package Name
TO-220FL
JEITA Package Code
⎯
RENESAS Code
Previous Code
MASS[Typ.]
Unit: mm
PRSS0003AF-A
TO-220FL
1.5g
10.0 ± 0.3
2.8 ± 0.2
3.2 ± 0.2
1.15 ± 0.2
1.15 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.40 ± 0.15
2.54 ± 0.25
Ordering Information
Orderable Part Number
BCR12LM-14LD#B00
Packing
Quantity
50 pcs. Straight type
Remark
Tube
Note : Please confirm the specification about the shipping in detail.
R07DS0571EJ0100 Rev.1.00
Dec 20, 2011
Page 7 of 7
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