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BCR12LM-12LB [RENESAS]

Triac; TRIAC
BCR12LM-12LB
型号： BCR12LM-12LB
厂家： RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述：

Triac
TRIAC

三端双向交流开关
文件： 总8页 (文件大小：107K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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Preliminary Datasheet  
BCR12LM-12LB  
R07DS0068EJ0100  
Rev.1.00  
Triac  
Medium Power Use  
Jul 27, 2010  
Features  
IT (RMS) : 12 A  
DRM : 600 V  
FGTI, IRGTI, IRGT III : 30 mA  
iso : 1800V  
The Product guaranteed maximum junction  
temperature 150C  
Insulated Type  
Planar Type  
UL Recognized : File No. E223904  
V
I
V
Outline  
RENESAS Package code: PRSS0003AF-A)  
Package name: TO-220FL)  
(
2
1. T1 Terminal  
2. T2 Terminal  
3. Gate Terminal  
3
1
1
2
3
Applications  
Switching mode power supply, light dimmer, electronic switch, hair dryer, Television, Stereo system, refrigerator,  
Washing machine, infrared kotatsu, and carper, small motor controller, SS relay, solenoid driver, copying machine,  
electric tool, electric heater control, and other general purpose control applications  
Voltage class  
Parameter  
Symbol  
Unit  
12  
Repetitive peak off-state voltageNote1  
Non-repetitive peak off-state voltageNote1  
VDRM  
VDSM  
600  
720  
V
V
R07DS0068EJ0100 Rev.1.00  
Jul 27, 2010  
Page 1 of 7  
BCR12LM-12LB  
Preliminary  
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
Surge on-state current  
I2t for fusion  
IT (RMS)  
12  
A
Commercial frequency, sine full wave  
360°conduction, Tc = 92C  
60Hz sinewave 1 full cycle, peak value,  
non-repetitive  
ITSM  
I2t  
120  
60  
A
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
5
W
W
V
0.5  
10  
2
Peak gate current  
A
Junction Temperature  
Storage temperature  
Mass  
Tj  
–40 to +150  
–40 to +150  
1.5  
C  
C  
g
Tstg  
—
Typical value  
Isolation voltage  
Viso  
1800  
V
Ta = 25C, AC 1 minute,  
T1 T2 G terminal to case  
Notes: 1. Gate open.  
Electrical Characteristics  
Parameter  
Repetitive peak off-state current  
On-state voltage  
Symbol  
IDRM  
Min.  
Typ.  
—
Max.  
2.0  
Unit  
mA  
V
Test conditions  
—
—
Tj = 150C, VDRM applied  
VTM  
—
1.6  
Tc = 25C, ITM = 20 A,  
instantaneous measurement  
Gate trigger voltageNote2  
  
  
VFGT  
—
—
—
—
—
—
—
—
—
—
—
—
1.5  
1.5  
1.5  
30  
V
V
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
VRGT  
VRGT  
V
  
Gate trigger curentNote2  
IFGT  
mA  
mA  
mA  
Tj = 25C, VD = 6 V, RL = 6 ,  
RG = 330   
  
  
IRGT  
30  
IRGT  
30  
  
Gate non-trigger voltage  
Thermal resistance  
VGD  
0.2/0.1  
—
—
—
—
—
4.0  
—
V
Tj = 125C/150C, VD = 1/2 VDRM  
Junction to caseNote3  
Rth (j-c)  
(dv/dt)c  
C/W  
V/s  
Critical-rate of rise of off-state  
commutation voltageNote4  
10/1  
Tj = 125C/150C  
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.  
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.  
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.  
Test conditions  
Commutating voltage and current waveforms  
(inductive load)  
1. Junction temperature  
Time  
Supply Voltage  
Tj = 125C/150C  
2. Rate of decay of on-state commutating current  
(di/dt)c = –6.0 A/ms  
(di/dt)c  
Time  
Main Current  
Main Voltage  
Time  
3. Peak off-state voltage  
VD = 400 V  
(dv/dt)c  
V
D
R07DS0068EJ0100 Rev.1.00  
Jul 27, 2010  
Page 2 of 7  
BCR12LM-12LB  
Preliminary  
Performance Curves  
Maximum On-State Characteristics  
Rated Surge On-State Current  
102  
7
5
200  
180  
160  
140  
120  
100  
80  
3
2
Tj = 150°C  
101  
7
5
3
2
60  
40  
Tj = 25°C  
100  
7
5
20  
0
0.5 1.0 1.5  
2
2.5 3.0 3.5 4.0  
100  
2
3
4 5  
7
101  
2
3 4 5 7 102  
On-State Voltage (V)  
Conduction Time (Cycles at 60Hz)  
Gate Trigger Current vs.  
Junction Temperature  
Gate Characteristics (I, II and III)  
103  
7
5
4
5
3
2
Typical Example  
V
= 10V  
GM  
P
= 5W  
GM  
101  
7
5
3
2
3
I
, I  
P
=
RGT I RGT III  
G(AV)  
0.5W  
I
= 2A  
GM  
2
V
= 1.5V  
GT  
102  
7
5
4
100  
7
5
3
2
I
FGT I  
3
2
10–1  
I
V
= 0.1V  
GD  
I
, I  
FGT I RGT III  
RGT I  
101  
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
–60–40–20 0 20 40 60 80 100120140160  
Gate Current (mA)  
Junction Temperature (°C)  
Gate Trigger Voltage vs.  
Junction Temperature  
Maximum Transient Thermal Impedance  
Characteristics (Junction to case)  
102  
103  
104  
103  
4.5  
4.0  
3.5  
3.0  
Typical Example  
7
5
4
3
2
2.5  
2.0  
1.5  
102  
7
5
4
3
1.0  
0.5  
0.0  
2
101  
10–1  
100  
101  
102  
–60–40–20 0 20 40 60 80 100120140160  
Junction Temperature (°C)  
Conduction Time (Cycles at 60Hz)  
R07DS0068EJ0100 Rev.1.00  
Jul 27, 2010  
Page 3 of 7  
BCR12LM-12LB  
Preliminary  
Maximum Transient Thermal Impedance  
Characteristics (Junction to ambient)  
Maximum On-State Power Dissipation  
103  
7
16  
No Fins  
5
14  
12  
10  
8
3
2
102  
7
360° Conduction  
Resistive,  
inductive loads  
5
3
2
101  
7
5
3
2
6
100  
7
4
5
2
3
2
10–1  
0
1012 3 571022 3 571032 3 571042 3 57105  
0
2
4
6
8
10 12 14 16  
Conduction Time (Cycles at 60Hz)  
RMS On-State Current (A)  
Allowable Case Temperature vs.  
RMS On-State Current  
Allowable Ambient Temperature vs.  
RMS On-State Current  
160  
160  
140  
120  
100  
80  
All fins are black painted  
aluminum and greased  
Curves apply regardless  
of conduction angle  
140  
120  
100  
80  
120 120 t2.3  
100 100 t2.3  
60 60 t2.3  
60  
60  
Curves apply  
regardless of  
conduction angle  
Resistive,  
inductive loads  
Natural convection  
40  
40  
20  
0
360° Conduction  
Resistive,  
inductive loads  
20  
0
0
2
4
6
8
10 12 14 16  
0
2
4
6
8
10 12 14 16  
RMS On-State Current (A)  
RMS On-State Current (A)  
Allowable Ambient Temperature vs.  
RMS On-State Current  
Repetitive Peak Off-State Current vs.  
Junction Temperature  
105  
7
160  
140  
120  
100  
80  
Natural convection  
No Fins  
Curves apply regardless  
of conduction angle  
Resistive, inductive loads  
Typical Example  
5
3
2
104  
7
5
3
2
60  
103  
7
5
40  
3
2
20  
0
102  
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
–60–40–20 0 20 40 60 80 100120140160  
RMS On-State Current (A)  
Junction Temperature (°C)  
R07DS0068EJ0100 Rev.1.00  
Jul 27, 2010  
Page 4 of 7  
BCR12LM-12LB  
Preliminary  
Holding Current vs.  
Junction Temperature  
Latching Current vs.  
Junction Temperature  
103  
7
5
4
103  
7
Typical Example  
5
Distribution  
3
2
–
+
T
, G  
2
3
Typical Example  
102  
7
5
3
2
2
102  
7
5
4
3
101  
7
5
+
–
+
–
3
2
2
T
T
, G  
, G  
2
2
Typical Example  
40 80  
101  
100  
–60–40–20  
0 20 40 60 80 100120140160  
–40  
0
120  
160  
Junction Temperature (°C)  
Junction Temperature (°C)  
Breakover Voltage vs.  
Junction Temperature  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage (Tj=125°C)  
160  
140  
120  
100  
80  
160  
Typical Example  
Tj = 125°C  
Typical Example  
140  
120  
100  
80  
III Quadrant  
60  
60  
40  
40  
I Quadrant  
20  
20  
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
–60–40–20 0 20 40 60 80 100120140160  
Junction Temperature (°C)  
Rate of Rise of Off-State Voltage (V/μs)  
Breakover Voltage vs.  
Rate of Rise of Off-State Voltage (Tj=150°C)  
Commutation Characteristics (Tj=125°C)  
160  
102  
7
5
Time  
Typical Example  
Tj = 125°C  
I = 4A  
T
Typical Example  
Tj = 150°C  
Main Voltage  
(dv/dt)c  
Main Current  
V
D
140  
120  
100  
80  
(di/dt)c  
Time  
I
T
τ = 500μs  
3
2
τ
V = 200V  
D
f = 3Hz  
101  
7
5
Minimum  
Characteristics  
Value  
III Quadrant  
60  
I Quadrant  
3
2
40  
I Quadrant  
III Quadrant  
5 7 101  
20  
100  
7
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104  
100  
2
3
2
3
5 7 102  
Rate of Decay of On-State  
Rate of Rise of Off-State Voltage (V/μs)  
Commutating Current (A/ms)  
R07DS0068EJ0100 Rev.1.00  
Jul 27, 2010  
Page 5 of 7  
BCR12LM-12LB  
Preliminary  
Gate Trigger Current vs.  
Gate Current Pulse Width  
Commutation Characteristics (Tj=150°C)  
102  
7
5
103  
7
5
4
Time  
Typical Example Main Voltage  
Typical Example  
(dv/dt)c  
V
D
Tj = 150°C  
I = 4A  
T
τ = 500μs  
I
FGT I  
I
Main Current  
(di/dt)c  
Time  
I
T
3
2
τ
RGT I  
3
V = 200V  
I
RGT III  
D
2
f = 3Hz  
101  
7
5
102  
7
5
4
I Quadrant  
III Quadrant  
3
2
3
Minimum  
Characteristics  
Value  
2
100  
7
101  
100  
2
3 4 5 7 101  
2
3 4 5 7 102  
100  
2
3
5 7 101  
2
3
5 7 102  
Rate of Decay of On-State  
Gate Current Pulse Width (μs)  
Commutating Current (A/ms)  
Gate Trigger Characteristics Test Circuits  
6Ω 6Ω  
Recommended Circuit Values Around The Triac  
Load  
C1  
R1  
A
A
6V  
6V  
C0 R0  
330Ω  
330Ω  
V
V
C = 0.1 to 0.47μF C = 0.1μF  
1
0
R = 47 to 100Ω  
R = 100Ω  
Test Procedure II  
1
0
Test Procedure I  
6Ω  
A
6V  
330Ω  
V
Test Procedure III  
R07DS0068EJ0100 Rev.1.00  
Jul 27, 2010  
Page 6 of 7  
BCR12LM-12LB  
Preliminary  
Package Dimensions  
Package Name  
TO-220FL  
JEITA Package Code  
⎯
RENESAS Code  
PRSS0003AF-A  
Previous Code  
TO-220FL  
MASS[Typ.]  
1.5g  
Unit: mm  
10.0 ± 0.3  
2.8 ± 0.2  
φ 3.2 ± 0.2  
1.15 ± 0.2  
1.15 ± 0.2  
0.75 ± 0.15  
2.54 ± 0.25  
0.40 ± 0.15  
2.54 ± 0.25  
Order Code  
Standard order  
code example  
Lead form  
Standard packing  
Quantity  
Standard order code  
Straight type  
Lead form  
Plastic Magazine (Tube)  
Plastic Magazine (Tube)  
50 Type name  
BCR12LM-12LB  
50 Type name – Lead forming code  
BCR12LM-12LB-A8  
Note : Please confirm the specification about the shipping in detail.  
R07DS0068EJ0100 Rev.1.00  
Jul 27, 2010  
Page 7 of 7  
Notice  
1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas  
Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to  
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Colophon 1.0  

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