2SK1579DYUR [RENESAS]

2 A, 12 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET;
2SK1579DYUR
型号: 2SK1579DYUR
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

2 A, 12 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET

晶体 晶体管 功率场效应晶体管 开关
文件: 总6页 (文件大小:70K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SK1579  
Silicon N Channel MOS FET  
REJ03G0956-0200  
(Previous: ADE-208-1296)  
Rev.2.00  
Sep 07, 2005  
Application  
High speed power switching  
Features  
Low on-resistance  
High speed switching  
Suitable for low voltage operation  
Outline  
RENESAS Package code: PLZZ0004CA-A  
R
(Package name: UPAK  
)
D
1
1. Gate  
2
3
2. Drain  
3. Source  
4. Drain  
G
4
S
Note: Marking is “DY”.  
*UPAK is a trademark of Renesas Technology Corp.  
Rev.2.00 Sep 07, 2005 page 1 of 5  
2SK1579  
Absolute Maximum Ratings  
(Ta = 25°C)  
Unit  
Item  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Ratings  
12  
V
V
Gate to source voltage  
±7  
Drain current  
2
A
*1  
Drain peak current  
ID(pulse)  
4
A
Body to drain diode reverse drain current  
Channel power dissipation  
Channel temperature  
IDR  
Pch*2  
Tch  
2
A
1
W
°C  
°C  
150  
Storage temperature  
Tstg  
–55 to +150  
Notes: 1. PW 100 µs, duty cycle 10%  
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)  
Electrical Characteristics  
(Ta = 25°C)  
Test conditions  
VDS = 8 V, VGS = 0  
Item  
Symbol  
IDSS  
Min  
0.4  
1
Typ  
Max  
1
Unit  
µA  
µA  
V
Drain to source cutoff current  
Gate to source cutoff current  
Gate to source cutoff voltage  
Drain to source on resistance (1)  
Drain to source on resistance (2)  
DC forward transfer admittance  
IGSS  
±5  
VGS = ±6.5 V, VDS = 0  
VDS = 5 V, ID = 100 µA  
VGS = 2.2 V, ID = 0.5 A*3  
VGS = 4 V, ID = 1 A*3  
VGS(off)  
1.4  
0.7  
0.35  
RDS(on)  
RDS(on)  
|yfs|  
1
2
0.36  
0.25  
2.5  
S
VDS = 5 V, ID = 1 A,  
VGS = 0.1 V *3  
Input capacitance  
Reverse transfer capacitance  
Output capacitance  
Turn-on time  
Ciss  
Crss  
Coss  
t(on)  
110  
30  
pF  
pF  
pF  
ns  
ns  
VDS = 5 V, VGS = 0,  
f = 1 MHz  
150  
500  
1500  
ID = 0.2 A, VGS = 0,  
Vin = 4 V, RL = 51 *3  
Turn-off time  
t(off)  
Note: 3. Pulse Test  
Rev.2.00 Sep 07, 2005 page 2 of 5  
2SK1579  
Main Characteristics  
Maximum Channel Power  
Dissipation Curve  
Maximum Safe Operation Area  
50  
1.6  
1.2  
0.8  
0.4  
20  
10  
5
2
1
DC Operatio  
PW = 10 ms  
1 Shot  
n (T  
0.5  
C
= 25  
°
C)  
0.2  
0.1  
Ta = 25°C  
0.05  
0
50  
100  
150  
200  
0.1 0.2 0.5  
1
2
5
10 20 50 100  
Drain to Source Voltage VDS (V)  
Ambient Temperature Ta (°C)  
Typical Output Characteristics  
Typical Transfer Characteristics  
5
4
3
2
1
5
4
3
2
1
4 V  
3.5 V  
3 V  
Ta = 25°C  
Pulse Test  
Ta = –25°C  
25°C  
75°C  
2.5 V  
2 V  
VDS = 5 V  
Pulse Test  
VGS = 1.5 V  
0
2
4
6
8
10  
0
1
3
4
5
2
Drain to Source Voltage VDS (V)  
Gate to Source Voltage VGS (V)  
Drain to Source on State Resistance  
vs. Gate to Source Voltage  
Static Drain to Source on State  
Resistance vs. Drain Current  
0.5  
0.4  
0.3  
0.2  
0.1  
5
Ta = 25°C  
Pulse Test  
ID = 0.1 A  
0.2 A  
2
1
2 V  
VGS = 3 V  
0.5  
0.5 A  
1 A  
4 V  
0.2  
0.1  
Ta = 25°C  
Pulse Test  
0.05  
0
1
2
3
4
5
0.2  
0.5  
1
2
5
10  
20  
Gate to Source Voltage VGS (V)  
Drain Current ID (A)  
Rev.2.00 Sep 07, 2005 page 3 of 5  
2SK1579  
Static Drain to Source on State  
Resistance vs. Temperature  
Forward Transfer Admittance  
vs. Drain Current  
1.0  
0.8  
0.6  
0.4  
0.2  
0
50  
VDS = 5 V  
Pulse Test  
Pulse Test  
20  
10  
5
ID = 1 A  
Ta = –25°C  
25°C  
VGS = 2 V  
0.5 A  
75°C  
ID = 0.5 A  
VGS = 4 V  
2
1
1 A  
2 A  
0
0.05  
–25  
25  
50  
75  
100  
0.2  
0.5  
1
2
5
10  
20  
Case Temperature TC (°C)  
Drain Current ID (A)  
Reverse Drain Current vs.  
Source to Drain Voltage  
Typical Capacitance vs.  
Drain to Source Voltage  
500  
200  
5
4
3
2
1
0
Coss  
Pulse Test  
Ciss  
Crss  
100  
50  
20  
VGS = 2 V  
VGS = 0  
f = 1 MHz  
VGS = 0  
10  
5
0.1 0.2  
0.5  
1
2
5
10  
0
1.0  
2.0  
Source to Drain Voltage VSD (V)  
Drain to Source Voltage VDS (V)  
Switching Characteristics  
5,000  
VGS = 4 V, VDD = 10 V  
PW = 2 µs, Duty cycle = 1%  
2,000  
1,000  
500  
t
d(off)  
t
f
t
r
200  
100  
50  
t
d(on)  
0.05 0.1 0.2  
0.5  
1
2
5
Drain Current ID (A)  
Rev.2.00 Sep 07, 2005 page 4 of 5  
2SK1579  
Package Dimensions  
JEITA Package Code  
SC-62  
RENESAS Code  
Package Name  
UPAK / UPAKV  
MASS[Typ.]  
0.050g  
Unit: mm  
PLZZ0004CA-A  
4.5 0.1  
1.8 Max  
1.5 0.1  
0.44 Max  
(1.5)  
φ
1
0.53 Max  
0.48 Max  
0.44 Max  
1.5  
1.5  
3.0  
Ordering Information  
Part Name  
Quantity  
Shipping Container  
Taping, φ178 mm Reel  
2SK1579DY  
3000 pcs  
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of  
production before ordering the product.  
Rev.2.00 Sep 07, 2005 page 5 of 5  
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
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may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.  
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary  
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.  
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http://www.renesas.com  
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.  
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© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.  
Colophon .3.0  

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