2SK1581 [KEXIN]
MOS Field Effect Transistor; MOS场效应
| 型号： | 2SK1581 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistor |
| 文件： | 总1页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
MOSFET
MOS Field Effect Transistor
2SK1581
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Features
3
Can be driven by Ics having a 3V single power supply.
Not necessry to consider driving current because of its thgh input impedance.
Possible to reduce the number of parts by omitting the bias resistor
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1 GATE
2 SOURCE
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Symbol
VDSS
VGSS
ID
Rating
16
Unit
V
Gate to source voltage
Drain current (DC)
V
16
mA
mA
mW
200
Drain current(pulse) *
Power dissipation
ID
400
PD
200
Channel temperature
Storage temperature
* PW 10ms, duty cycle
Tch
150
Tstg
-55 to +150
5%
Electrical Characteristics Ta = 25
Parameter
Symbol
IDSS
IGSS
VGS(off)
Testconditons
Min
Typ
Max
10
Unit
A
Drain cut-off current
VDS=16V,VGS=0
Gate leakage current
VGS= 3V,VDS=0
VDS=3.0V,ID=10
10
A
Gate to source cutoff voltage
Forward transfer admittance
0.9
20
1.2
70
1.5
V
A
VDS=3.0V,ID=10mA
VGS=2.5V,ID=1mA
VGS=4.0V,ID=1mA
ms
Yfs
3.2
2.2
27
5.0
3.0
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
VDS=3.0V,VGS=0,f=1MHZ
37
8
100
300
210
240
ID=10mA,VGS(on)=3.0V,RL=300
,VDD=3.0V,RG=10
Turn-off delay time
Fall time
td(off)
tf
Marking
Marking
G14
1
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