2SK1580 [NEC]
MOS FIELD EFFECT TRANSISTOR; MOS场效应
| 型号： | 2SK1580 |
| 厂家： | 
NEC |
| 描述： | MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总5页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1580
SWITCHING
N-CHANNEL MOS FET
DESCRIPTION
The 2SK1580 is an N -channel vertical type MOS FET which
can be driven by 2.5 V power supply.
As the 2SK1580 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliance
including VCR cameras and headphone stereos which need
power saving.
PACKAGE DRAWING (Unit: mm)
2.1 0.1
1.25 0.1
2
1
3
FEATURES
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its high
input impedance.
Marking
• Possible to reduce the number of parts by omitting the bias
resistor.
1. Source
2. Gate
3. Drain
ORDERING INFORMATION
PART NUMBER
2SK1580
PACKAGE
SC-70 (SSP)
Marking: G13
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note
Total Power Dissipation (TA = 25°C)
Channel Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
16
±16
±100
±200
150
V
V
mA
mA
mW
°C
Drain
Body
Diode
Gate
Tch
Tstg
150
−55 to +150
Gate
Protection
Diode
Storage Temperature
°C
Source
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13555EJ5V0DS00 (5th edition)
The mark
shows major revised points.
Date Published June 2005 NS CP(K)
Printed in Japan
1991
2SK1580
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
1.0
UNIT
µA
µA
V
IDSS
VDS = 16 V, VGS = 0 V
IGSS
VGS = 3.0 V, VDS = 0 V
VDS = 3.0 V, ID = 10 µA
VDS = 3.0 V, ID = 10 mA
VGS = 2.5 V, ID = 1.0 mA
VGS = 4.0 V, ID = 1.0 mA
VDS = 3.0 V
5.0
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
0.8
20
1.1
44
9.0
6.0
18
22
4.0
27
75
78
80
1.6
Note
Forward Transfer Admittance
mS
Ω
Note
Drain to Source On-state Resistance
15
10
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
Coss
VGS = 0 V
Crss
f = 1 MHz
td(on)
VDD = 3.0 V, ID = 10 mA
VGS = 3.0 V
tr
Turn-off Delay Time
Fall Time
td(off)
RG = 10 Ω
tf
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS
RL
90%
V
GS
V
GS
10%
Wave Form
0
RG
PG.
V
DD
90%
I
D
90%
10%
I
D
V
0
GS
10%
I
D
0
Wave Form
t
d(on)
t
r
t
d(off)
t
f
τ
t
on
t
off
µ
τ = 1
s
Duty Cycle ≤ 1%
2
Data Sheet D13555EJ5V0DS
2SK1580
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT VS.
DRAIN TO SOURCE VOLTAGE
180
120
100
80
3.5 V
3.0 V
Pulsed
4.0 V
150
120
90
2.5 V
60
40
60
V
GS = 2.0 V
30
20
0
0
1
2
3
7
0
30
60
90
120
150
180
VDS - Drain to Source Voltage - V
T
A
- Ambient Temperature - ˚C
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
TRANSFER CHARACTERISTICS
100
10
1
V
DS = 3 V
Pulsed
1.5
V
DS = 3 V
I = 10 A
D
TA
= 150˚C
1.0
0.5
0
75˚C
25˚C
–25˚C
0.1
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
− 30
0
30
60
90
120
150
VGS - Gate to Source Voltage - V
Tch - Channel Temperature - ˚C
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
1000
100
10
V
DS = 3 V
ID = 1 mA
Pulsed
Pulsed
10
5
T
A
= −25˚C
25˚C
75˚C
150˚C
0
1
0
5
10
15
20
25
1
3
10
30
100
300
1000
VGS - Gate to Source Voltage -
V
I
D
- Drain Current - mA
3
Data Sheet D13555EJ5V0DS
2SK1580
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
15
10
5
V
GS = 2.5 V
I
D = 1 mA
Pulsed
Pulsed
15
TA
= 150˚C
VGS = 2.5 V
75˚C
25˚C
−25˚C
10
5
VGS = 4 V
0
0
1
3
10
30
100
–30
0
30
60
90
120
150
I
D
- Drain Current - mA
T
ch - Channel Temperature - ˚C
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
100
10
1
1000
V
V
R
DD = 3 V
GS = 3 V
G = 10 Ω
300
100
C
iss
Coss
t
r
t
f
C
rss
t
d(off)
30
10
t
d(on)
V
GS = 0 V
f = 1 MH
Z
0.1
0.1
0.3
1
3
10
30
100
2
10
20
100 200
V
DS - Drain to Source Voltage - V
I
D
- Drain Current - mA
4
Data Sheet D13555EJ5V0DS
2SK1580
•
The information in this document is current as of June, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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appear in this document.
•
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•
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M8E 02. 11-1
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