2SK1580-T1 [NEC]
Small Signal Field-Effect Transistor, 0.1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER MINIMOLD, SC-70, 3 PIN;
| 型号： | 2SK1580-T1 |
| 厂家： | 
NEC |
| 描述： | Small Signal Field-Effect Transistor, 0.1A I(D), 16V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPER MINIMOLD, SC-70, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1580
N-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
The 2SK1580 is an N -channel vertical type MOS FET which can be
driven by 2.5 V power supply.
PACKAGE DRAWING (Unit : mm)
As the MOS FET is driven by low voltage and does not require con-
sideration of driving current, it is suitable for appliance including VCR
cameras and headphone stereos which need power saving.
2.1 ±0.1
1.25 ±0.1
FEATURES
G
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its
high input impedance.
D
S
• Possible to reduce the number of parts by omittng the bias resistor.
Marking
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT
16
V
V
±16
±100
±200
150
mA
mA
mW
°C
EQUIVALENT CIRCUIT
Total Power Dissipation (TA = 25°C)
Channel Temperature
Tch
150
Drain
Operating Temperature
Topt
−55 to +80 °C
−55 to +150 °C
Internal
Storage Temperature
Tstg
Diode
Gate
Gate
Protection
Diode
Note1. PW ≤ 10 ms, Duty Cycle ≤ 50%
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device is actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The mark ★ shows major revised points.
Document No. D13555EJ4V0DS00 (4th edition)
Date Published June 2001 NS CP (K)
1991
©
Printed in Japan
2SK1580
★
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
VDS = 16 V, VGS = 0 V
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
Gate Leakage Current
IDSS
IGSS
1.0
±5.0
1.6
µA
nA
V
VGS = ±3.0 V, VDS = 0 V
VDS = 3 V, ID = 10 µA
VDS = 3 V, ID = 10 mA
VGS = 2.5 V, ID = 1 mA
VGS = 4.0 V, ID = 1 mA
VDS = 3 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
0.8
20
1.1
44
9
Forward Transfer Admittance
Drain to Source On-state Resistance
mS
Ω
15
10
6
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
18
22
4
pF
pF
pF
ns
ns
ns
ns
VGS = 0 V
Coss
Crss
f = 1 MHz
td(on)
tr
td(off)
tf
VDD = 3 V, ID = 10 mA
VGS = 3 V
27
75
78
80
RG = 10 Ω
Turn-off Delay Time
Fall Time
RL = 300 Ω
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS
RL
90%
V
GS
VGS
10%
Wave Form
0
RG
PG.
VDD
90%
I
D
90%
10%
I
D
V
0
GS
10%
I
D
0
Wave Form
t
r
t
d(on)
t
d(off)
t
f
τ
t
on
toff
τ = 1µs
Duty Cycle ≤ 1%
2
Data Sheet D13555EJ4V0DS
2SK1580
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
180
150
120
90
100
80
60
40
60
30
20
0
0
20
40
60
80 100 120 140 160
0
30
T
60
90
120
150
180
T
C
- Case Temperature - ˚C
A
- Ambient Temperature - ˚C
DRAIN CURRENT VS.
DRAIN TO SOURCE VOLTAGE
TRANSFER CHARACTERISTICS
100
120
100
80
V
DS = 3 V
3.5 V
3.0 V
Pulsed
Pulsed
4.0 V
10
1
TA
= 150˚C
2.5 V
75˚C
25˚C
–25˚C
60
40
V
GS = 2.0 V
0.1
20
0
0.01
0
1
2
3
7
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain to Source Voltage - V
V
GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMMITTANCE vs.
DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1000
100
10
1.5
V
DS = 3 V
VDS = 3 V
Pulsed
I = 10 A
D
T
A
= −25˚C
25˚C
1.0
0.5
0
75˚C
150˚C
− 30
0
30
60
90
120
150
1
1
3
10
30
100
300
1000
T
ch - Channel Temperature - ˚C
I
D
- Drain Current - mA
3
Data Sheet D13555EJ4V0DS
2SK1580
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
V
GS = 2.5 V
I
D
= 1 mA
Pulsed
Pulsed
10
15
T
A
= 150˚C
75˚C
25˚C
10
5
5
−25˚C
0
0
0
5
10
15
20
25
1
3
10
30
100
V
GS - Gate to Source Voltage -
V
I
D
- Drain Current - mA
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
15
10
5
100
I
D = 1 mA
Pulsed
C
iss
V
GS = 2.5 V
10
1
Coss
V
GS = 4 V
C
rss
VGS = 0 V
f = 1 MH
Z
0.1
0
–30
0.1
0.3
1
3
10
30
100
0
30
60
90
120
150
VDS - Drain to Source Voltage - V
T
ch - Channel Temperature - ˚C
SWITCHING CHARACTERISTICS
1000
V
V
R
DD = 3 V
GS = 3 V
G = 10 Ω
300
100
t
r
t
f
td(off)
30
10
t
d(on)
2
10
20
100 200
I
D
- Drain Current - mA
4
Data Sheet D13555EJ4V0DS
2SK1580
[MEMO]
5
Data Sheet D13555EJ4V0DS
2SK1580
[MEMO]
6
Data Sheet D13555EJ4V0DS
2SK1580
[MEMO]
7
Data Sheet D13555EJ4V0DS
2SK1580
•
The information in this document is current as of June, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
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M8E 00. 4
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