2SJ559-T1 [RENESAS]
2SJ559-T1;
| 型号： | 2SJ559-T1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2SJ559-T1 |
| 文件： | 总7页 (文件大小：307K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Elnics Corporation
Issued by: Renesas Electronics Corporation (http://wwesas.com)
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ559
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SJ559 is a switching device which can be driven directly by a
2.5 V power source.
+0.1
–0
+0.1
0.3
0.15
–0.05
The 2SJ559 has excellent switching characteristics, and is suitable
for use as a high-speed switching device in digital circuits.
0 to 0.1
FEATURES
1
• Can be driven by a 2.5 V power source.
• Low gate cut-off voltage.
+0.1
–0
0.2
0.5
0.6
0.5
0.75 0.05
ORDERING INFORMATION
1.0
1.6 0.1
PART NUMBER
2SJ559
PACKAGE
1: Source
2: Gate
SC-75 (USM)
3: Drain
Marking: C1
ABSOLUTE MAXIMUM RATINGS (TA = 25°
EQUIVALENT CIRCUIT
−30
m20
m0.1
m0.4
200
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
SS
ID(DC)
ID(pulse)
PT
V
V
A
Drain
Body
Drain Current (pulse) Note1
Total Power Dissipation Note2
Channel Temperature
A
Diode
Gate
mW
°C
°C
Gate
Tch
150
−55 to +150
Protection
Diode
Storage Temperature
Tstg
Source
Notes 1. PW ≤ 10 µs, Dty Cycle ≤ 1%
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13801EJ2V0DS00 (2nd edition)
The mark shows major revised points.
Date Published November 2004 NS CP(K)
Printed in Japan
1999
2SJ559
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = −30 V, VGS = 0 V
MIN. TYP. MAX. UNIT
−1.0
µA
µA
V
IGSS
VGS = m20 V, VDS = 0 V
VDS = −3.0 V, ID = −10 µA
VDS = −3.0 V, ID = −10 mA
VGS = −2.5 V, ID = −1.0 mA
VGS = −4.0 V, ID = −10 mA
VGS = −10 V, ID = −10 mA
VDS = −3.0 V
m10
−1.0
−1.4 −1.7
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Note
Forward Transfer Admittance
20
mS
Ω
Note
Drain to Source On-state Resistance
23
11
60
23
13
Ω
Ω
6.0
5.0
15
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
pF
pF
pF
ns
ns
ns
ns
Coss
VGS = 0 V
Crss
f = 1 MHz
1.3
140
330
220
320
VDD = −3.0 V
ID = −10 mA
VGS = −4.0 V
RG = 10 Ω
td(on)
tr
Turn-off Delay Time
Fall Time
td(off)
tf
Note Plused
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS(−)
R
L
90%
V
GS
V
GS
Wave Form
RG
PG.
V
DD
90%
90%
10%
I
D
V
0
GS(−)
10%
0
orm
t
d(on)
t
r
t
d(off)
t
f
τ
t
on
t
off
τ = 1
µ
s
Duty Cycle ≤ 1%
2
Data Sheet D13801EJ2V0DS
2SJ559
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
240
–100
–80
Pulsed
Mounted on ceramic substrate
of 3.0 cm2 x 0.64 mm
200
V
GS = –10 V
GS = –6 V
GS = –4 V
160
120
80
40
0
V
–60
V
V
GS = –3 V
–40
–20
0
V
GS = –2.5 V
0
30
60
90
120
150
180
210
0
–1
–2
–3
–4
–5
TA
- Ambient Temperature - ˚C
VDS - Drairce Voltage - V
RD TRANSFER ADMITTANCE vs.
N CURRENT
TRANSFER CHARACTERISTICS
100
100
–100
= –3 V
V
DS = –3 V
lsed
Pulsed
–10
–1
TA
= 125˚C
A = 75˚C
T
TA
= –25˚C
TA
= 25˚C
TA = 25˚C
TA
= –25˚C
–0.1
10
1
TA = 75˚C
–0.01
TA
= 125˚C
–0.001
–0.1
–1
–10
–100
–1000
0
–0.8
–1.6
–2.4
–4.0
ID - Drain Current - mA
VGS - Gate to Source V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOUON-STATE RESISTANCE vs.
DRAIN CURRENT
60
60
V
GS = –4 V
V
GS = –2.5 V
Pulsed
Pulsed
50
40
50
40
TA
= 125˚C
TA = 75˚C
30
30
TA
= 125˚C
T
A = 75˚C
20
10
20
10
0
T
A
= 25˚C
TA
= –25˚C
T
A
= 25˚C
TA
= –25˚C
0
–0.1
–1
I
–10
–100
–1000
–0.1
–1
I
–10
–100
–1000
D - Drain Current - mA
D - Drain Current - mA
3
Data Sheet D13801EJ2V0DS
2SJ559
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
60
50
60
50
40
30
20
10
0
V
GS
Pulesd
=
–10 V
Pulsed
I
D
=
=
=
–1 mA
40
30
ID
–10 mA
–100 mA
ID
T
A
=
75˚C
TA
=
25˚C
20
10
0
TA = –25˚C
TA
=
125˚C
–0.1
–1
–10
–100
–1000
0
–2
–4
–6
–8
–10
I
D - Drain Current - mA
VGS - Gate to Source Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
HING CHARACTERISTICS
100
10
1
1000
V
GS = 0 V
f = 1 MHz
tr
tf
C
oss
iss
td(on)
100
C
td(off)
V
V
= –3 V
GDDS = –4 V
C
rss
R
G
= 10 Ω
10
–10
–100
D - Drain Current - mA
–1000
–1
–10
V
DS - Drain to Source Voltag
I
SOURAIN DIODE
FOROLTAGE
–1000
V
GS = 0 V
Pulsed
–100
–10
–1
–0.1
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
VSD - Source to Drain Voltage - V
4
Data Sheet D13801EJ2V0DS
2SJ559
•
The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NElectronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by ans without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsor any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patpyrights or other intellectual
property rights of third parties by or arising from the use of NEC Elecproducts listed in this document
or any other liability arising from the use of such products. No , express, implied or otherwise, is
granted under any patents, copyrights or other intellectual propertof NEC Electronics or others.
• Descriptions of circuits, software and other related informatiis document are provided for illustrative
purposes in semiconductor product operation and apn examples. The incorporation of these
circuits, software and information in the design of a er's equipment shall be done under the full
responsibility of the customer. NEC Electronics ano responsibility for any losses incurred by
customers or third parties arising from the use of tcuits, software and information.
• While NEC Electronics endeavors to enhance lity, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the ty of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property o(including death) to persons arising from defects in NEC
Electronics products, customers muporate sufficient safety measures in their design, such as
redundancy, fire-containment and ae features.
• NEC Electronics products are cinto the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grades only to NEC Electronics products developed based on a customer-
designated "quality assuogram" for a specific application. The recommended applications of an NEC
Electronics product deits quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronuct before using it in a particular application.
"Standard": Com, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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