2SJ567 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV); 东芝场效应晶体管的硅P沟道MOS型（ π - MOSV ）
| 型号： | 2SJ567 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV) |
| 文件： | 总7页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ567
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ567
Industrial Applications
Switching Applications
Unit: mm
Chopper Regulator, DC-DC Converter and
Motor Drive Applications
·
·
·
·
Low drain-source ON resistance: R
= 1.6 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 2.0 S (typ.)
fs
Low leakage current: I
= −100 µA (max) (V
= −200 V)
DS
= −10 V, I = −1 mA)
DSS
Enhancement-model: V = −1.5 ~ −3.5 V (V
th DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
-200
-200
±20
-2.5
-10
20
V
V
V
DSS
DGR
GSS
Drain-gate voltage (R
= 20 kW)
V
V
GS
Gate-source voltage
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
DP
JEDEC
JEITA
―
Drain power dissipation (Tc = 25°C)
P
W
D
SC-64
2-7B1B
Single pulse avalanche energy
E
I
97.5
mJ
AS
TOSHIBA
(Note 2)
Avalanche current
-2.5
2.0
A
Weight: 0.36 g (typ.)
AR
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
-55~150
stg
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
6.25
125
°C/W
°C/W
th (ch-c)
R
th (ch-a)
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
R
= -50 V, Tch = 25°C (initial), L = -25.2 mH, I = -2.5 A
AR
DD
= 25 W,
G
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
JEDEC
―
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2002-08-12
2SJ567
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
I
V
V
¾
¾
¾
¾
±10
-100
¾
mA
mA
V
GSS
GS
DS
DS
Drain cut-off current
= -200 V, V
= 0 V
GS
DSS
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
V
I
= -10 mA, V = 0 V
GS
-200
-1.5
¾
¾
(BR) DSS
D
V
V
V
V
= -10 V, I = -1 mA
¾
-3.5
2.0
¾
V
th
DS
GS
DS
D
R
= -10 V, I = -1.5 A
1.6
2.0
410
40
W
DS (ON)
D
ïY ï
fs
= -10 V, I = -1.5 A
1.0
¾
S
D
C
C
¾
iss
V
= -10 V, V
= 0 V, f = 1 MHz
pF
ns
Reverse transfer capacitance
Output capacitance
¾
¾
DS
GS
rss
C
oss
¾
145
¾
Rise time
t
¾
¾
¾
20
45
15
¾
¾
¾
r
0 V
I
= -1.5 A V
OUT
D
V
GS
-10 V
Turn-on time
Switching time
t
on
R
= 66.7 W
-100 V
L
Fall time
t
f
~
-
V
DD
<
Duty 1%, t = 10 ms
w
Turn-off time
t
¾
¾
85
10
¾
off
Total gate charge
Q
g
¾
(Gate source plus gate-drain)
~
-
V
-160 V, V
= -10 V,
GS
DD
nC
Gate-source charge
Q
Q
¾
¾
6
4
¾
¾
gs
I
= -2.5 A
D
Gate-drain (“Miller”) charge
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
A
Continuous drain reverse current
I
¾
¾
¾
¾
-2.5
DR
(Note 1)
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
I
¾
¾
¾
¾
¾
¾
-10
2.0
¾
A
V
DRP
V
I
I
= -2.5 A, V
= -2.5 A, V
= 0 V
DSF
DR
DR
GS
GS
t
= 0 V,
135
0.81
ns
mC
rr
dI /dt = 100 A/ms
Q
rr
¾
DR
Marking
※ Lot Number
Type
J567
Month (starting from alphabet A)
Year (last number of the christian era)
※
2
2002-08-12
2SJ567
I
– V
I – V
D DS
D
DS
-2.0
-1.6
-1.2
-0.8
-0.4
0
-5
-4
-3
-2
-1
0
Common source
-8
-6
-5
-4.8
-4.6
-4.4
-6
-8
Common source
Tc = 25°C
-10
-15
Tc = 25°C, Pulse test
-10
Pulse test
-5.75
-15
-5.5
-5.25
-5
-4.2
-4.8
-4.6
-4.4
-4.2
V
GS
= -4 V
V
GS
= -4 V
0
-1
-2
-3
-4
-5
0
-10
-20
-30
-40
-50
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
– V
V
– V
DS GS
D
GS
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
Common source
= -10 V
Pulse test
Common source
Tc = 25°C
Pulse test
Tc = -55°C
V
DS
25
I
= -2.5 A
D
100
-1.5
-0.8
0
-2
-4
-6
-8
-10
0
-4
-8
-12
-16
(V)
-20
Gate-source voltage
V
(V)
Gate-source voltage
V
GS
GS
ïY ï – I
fs
R
– I
D
DS (ON)
D
10
10
Common source
= -10 V
Common source
Tc = 25°C
Pulse test
V
DS
Pulse test
Tc = -55°C
25
100
V
GS
= -10 V
-15
1
1
0.1
0.1
-0.1
-1
Drain current
-10
-0.1
-1
-10
I
D
(A)
Drain current
I
D
(A)
3
2002-08-12
2SJ567
R
– Tc
I
– V
DR DS
DS (ON)
6
5
4
3
2
1
-10
Common source
= -10 V
Pulse test
Common source
Tc = 25°C
Pulse test
V
GS
I
= -1.5 A
D
-1.2
-1
-1.0
-5
-3
-1
0.6
V
GS
= 0 V
0
-0.1
-80
-40
0
40
80
120
160
0
0.2
0.4
0.8
1
Case temperature Tc (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
– Tc
th
DS
1000
5
4
3
2
1
Common source
= 10 V
C
iss
V
DS
= 1 mA
I
D
Pulse test
100
10
1
C
oss
C
rss
Common source
V
= 0 V
GS
f = 1 MHz
Tc = 25°C
0
-80
-40
0
40
80
120
160
Case temperature Tc (°C)
-0.1
-1
-10
-100
Drain-source voltage
V
(V)
DS
P
– Tc
Dynamic input/output characteristics
D
40
30
20
10
0
V
DS
-160
-16
-12
-8
V
DS
= -40 V
-120
-80
-40
0
Common source
= -2.5 A
Tc = 25°C
-180
I
D
Pulse test
-80
-4
V
GS
0
40
80
120
160
0
4
8
Total gate charge
12
16
20
Case temperature Tc (°C)
Q
(nC)
g
4
2002-08-12
2SJ567
r
th
– t
w
3
1
Duty = 0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.05
0.03
Single pulse
P
DM
t
0.01
0.01
T
0.005
0.003
Duty = t/T
th (ch-c)
R
= 6.25°C/W
0.001
10 m
100 m
1 m
10 m
Pulse width
100 m
(S)
1
10
100
t
w
Safe operating area
E
– T
AS ch
-30
-10
100
80
60
40
20
0
I
max (pulse) *
100 ms*
D
-5
-3
1 ms*
-1
-0.5
-0.3
DC
operation
-0.1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
-0.05
-0.03
25
50
75
100
125
150
V
max
DSS
-0.01
Channel temperature
T
(°C)
ch
-0.005
-0.1
-0.3
-1
-3
-10
-30
-100 -300
Drain-source voltage
V
(V)
DS
B
VDSS
15 V
I
AR
-15 V
V
V
DD
DS
B
Test circuit
Waveform
æ
ö
1
2
ç
R
DD
= 25 W
VDSS
G
÷
÷
ø
=
×L×I
×
Ε
AS
ç
2
-
V
= -50 V, L = 25.2 mH
B
V
DD
VDSS
è
5
2002-08-12
2SJ567
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-08-12
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
相关型号：
2SJ567(2-7J1B)
TRANSISTOR 2.5 A, 200 V, 2 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-7J1B, SC-64, 3 PIN, FET General Purpose Power
TOSHIBA
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