2SJ567_06 [TOSHIBA]
Silicon P-Channel MOS Type Switching Applications; 硅P沟道MOS型开关应用![2SJ567_06](http://pdffile.icpdf.com/pdf1/p00101/img/icpdf/2SJ567_544586_icpdf.jpg)
型号: | 2SJ567_06 |
厂家: | ![]() |
描述: | Silicon P-Channel MOS Type Switching Applications |
文件: | 总6页 (文件大小:196K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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2SJ567
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV)
2SJ567
Switching Applications
Unit: mm
Chopper Regulator, DC/DC Converter and
Motor Drive Applications
•
•
•
•
Low drain-source ON-resistance: R
= 1.6 Ω (typ.)
DS (ON)
High forward transfer admittance: |Y | = 2.0 S (typ.)
fs
Low leakage current: I
= −100 μA (max) (V
= −200 V)
DSS
DS
Enhancement model: V = −1.5 ~ −3.5 V (V
= −10 V, I = −1 mA)
D
th
DS
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Symbol
Rating
Unit
V
−200
−200
±20
−2.5
−10
20
V
V
V
DSS
Drain-gate voltage (R
Gate-source voltage
= 20 kΩ)
V
GS
DGR
V
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
DP
JEDEC
JEITA
―
Drain power dissipation (Tc = 25°C)
P
W
D
AS
AR
SC-64
Single-pulse avalanche energy
E
97.5
mJ
(Note 2)
TOSHIBA
2-7B1B
Avalanche current
I
−2.5
2.0
A
Weight: 0.36 g (typ.)
Repetitive avalanche energy (Note 3)
Channel temperature
E
mJ
°C
°C
AR
T
150
ch
Storage temperature range
T
−55~150
stg
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R
R
6.25
125
°C/W
°C/W
th (ch-c)
JEDEC
―
th (ch-a)
JEITA
SC-64
Note 1: Ensure that the channel temperature does not exceed 150°C.
TOSHIBA
2-7J1B
Note 2:
V
R
= −50 V, Tch = 25°C (initial), L = −25.2 mH, I
= 25 Ω
= −2.5 A
AR
DD
G
Weight: 0.36 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-11-16
2SJ567
Electrical Characteristics (Ta = 25°C)
Characteristic
Gate leakage current
Symbol
Test Condition
Min
Typ.
Max
Unit
I
V
V
= ±16 V, V
= 0 V
⎯
⎯
⎯
⎯
±10
−100
⎯
μA
μA
V
GSS
GS
DS
DS
Drain cutoff current
I
= −200 V, V = 0 V
DSS
(BR) DSS
GS
= 0 V
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
V
I
= −10 mA, V
−200
−1.5
⎯
⎯
D
GS
V
V
V
V
= −10 V, I = −1 mA
⎯
−3.5
2.0
⎯
V
th
DS
GS
DS
D
R
= −10 V, I = −1.5 A
1.6
2.0
410
40
Ω
DS (ON)
⎪Y ⎪
D
= −10 V, I = −1.5 A
1.0
⎯
S
fs
D
C
C
⎯
iss
V
= −10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
⎯
⎯
DS
rss
C
⎯
145
⎯
oss
Rise time
t
r
⎯
⎯
⎯
20
45
15
⎯
⎯
⎯
0 V
I = −1.5 A V
D OUT
V
GS
−10 V
Turn-on time
Switching time
t
on
R
= 66.7 Ω
−100 V
L
ns
Fall time
t
f
∼
V
DD
<
Duty 1%, t = 10 μs
w
Turn-off time
t
⎯
⎯
85
10
⎯
⎯
off
Total gate charge
Q
g
(Gate source plus gate-drain)
∼
V
−160 V, V
= −10 V,
GS
DD
nC
Gate-source charge
Q
⎯
⎯
6
4
⎯
⎯
gs
I
= −2.5 A
D
Gate-drain (“Miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
I
⎯
⎯
⎯
⎯
−2.5
A
DR
(Note 1)
(Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
I
⎯
⎯
⎯
⎯
⎯
⎯
−10
2.0
⎯
A
V
DRP
V
I
I
= −2.5 A, V
= −2.5 A, V
= 0 V
DSF
DR
DR
GS
GS
t
= 0 V,
135
0.81
ns
μC
rr
dI /dt = 100 A/μs
DR
Q
⎯
rr
Marking
J567
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-16
2SJ567
I
– V
I – V
D DS
D
DS
−2.0
−1.6
−1.2
−0.8
−0.4
0
−5
−4
−3
−2
−1
0
Common source
Tc = 25°C
−8
−6
−5
−4.8
−4.6
−4.4
−6
−8
Common source
Tc = 25°C
Pulse test
−10
−15
Pulse test
−10
−5.75
−15
−5.5
−5.25
−5
−4.2
−4.8
−4.6
−4.4
−4.2
V
= −4 V
GS
V
= −4 V
GS
0
−1
−2
−3
−4
−5
0
−10
−20
−30
−40
−50
Drain-source voltage
V
DS
(V)
Drain-source voltage
V
DS
(V)
I
D
– V
V
– V
DS GS
GS
−10
−8
−6
−4
−2
0
−10
−8
−6
−4
−2
0
Common source
= −10 V
Common source
Tc = 25°C
Tc = −55°C
V
DS
Pulse test
Pulse test
25
I
= −2.5 A
D
100
−1.5
−0.8
0
−2
−4
−6
−8
−10
0
−4
−8
−12
−16
−20
Gate-source voltage
V
GS
(V)
Gate-source voltage
V
GS
(V)
⎪Y ⎪ – I
fs
R
– I
DS (ON)
D
D
10
10
Common source
= −10 V
Common source
Tc = 25°C
V
DS
Pulse test
Pulse test
Tc = −55°C
25
100
V
= −10 V
−15
GS
1
1
0.1
−0.1
0.1
−0.1
−1
−10
−1
−10
Drain current
I
(A)
Drain current
I
(A)
D
D
3
2006-11-16
2SJ567
R
– Tc
I
– V
DR DS
DS (ON)
6
5
4
3
2
1
−10
Common source
= −10 V
Common source
Tc = 25°C
V
I
= −1.5 A
GS
D
Pulse test
Pulse test
−1.2
−1
−1.0
−5
−3
−1
0.6
V
= 0 V
GS
0.8
0
−80
−0.1
−40
0
40
80
120
160
0
0.2
0.4
1
Case temperature Tc (°C)
Drain-source voltage
V
DS
(V)
Capacitance – V
V
– Tc
th
DS
1000
5
4
3
2
1
Common source
= 10 V
C
iss
V
DS
= 1 mA
I
D
Pulse test
100
10
1
C
oss
C
rss
Common source
V
= 0 V
GS
f = 1 MHz
Tc = 25°C
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
−0.1
−1
−10
−100
Drain-source voltage
V
DS
(V)
P
– Tc
Dynamic input/output characteristics
D
40
30
20
10
0
V
DS
−160
−16
−12
−8
V
= −40 V
DS
−120
−80
−40
0
Common source
= −2.5 A
−180
I
D
Tc = 25°C
Pulse test
−80
−4
V
GS
0
40
80
120
160
0
4
8
12
16
20
Case temperature Tc (°C)
Total gate charge
Q
(nC)
g
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2006-11-16
2SJ567
r
th
– t
w
3
1
Duty = 0.5
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.05
0.03
Single pulse
P
DM
t
0.01
0.01
T
0.005
0.003
Duty = t/T
R
= 6.25°C/W
th (ch-c)
0.001
10 μ
100 μ
1 m
10 m
100 m
1
10
100
Pulse width
t
(S)
w
Safe operating area
E
– T
ch
AS
−30
−10
100
80
60
40
20
0
I
max (pulse) *
100 μs*
D
−5
−3
1 ms*
−1
−0.5
−0.3
DC
operation
−0.1
* Single nonrepetitive pulse
Tc = 25°C
−0.05
−0.03
Curves must be derated
linearly with increase in
temperature.
25
50
75
100
125
150
V
max
DSS
−0.01
Channel temperature
T
(°C)
ch
−0.005
−0.1
−0.3
−1
−3
−10
−30
−100 −300
Drain-source voltage
V
DS
(V)
B
VDSS
15 V
I
AR
−15 V
V
V
DD
DS
B
Test circuit
Waveform
⎛
⎜
⎜
⎝
⎞
1
2
2
R
= 25 Ω
= −50 V, L = 25.2 mH
VDSS
G
⎟
⎟
⎠
=
⋅L⋅I ⋅
Ε
AS
−
V
DD
V
B
VDSS
DD
5
2006-11-16
2SJ567
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
6
2006-11-16
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