2SJ557A-T2B-A [RENESAS]
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.5A I(D),SOT-346;
| 型号： | 2SJ557A-T2B-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,2.5A I(D),SOT-346 |
| 文件： | 总8页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ557A
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit : mm)
The 2SJ557A is a switching device which can be driven directly
by a 4 V power source.
+0.1
0.4
+0.1
–0.05
0.16
–0.06
The 2SJ557A features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
3
0 to 0.1
1
FEATURES
2
• 4 V drive available
• Low on-state resistance
0.65
0.95 0.95
1.9
RDS(on)1 = 100 mΩ MAX. (VGS = −10 V, ID = −1.0 A)
RDS(on)2 = 134 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A)
RDS(on)3 = 166 mΩ MAX. (VGS = −4.0 V, ID = −1.0 A)
• Built-in gate protection diode
0.9 to 1.1
2.9 0.2
1
: Gate
2: Source
3: Drain
ORDERING INFORMATION
PART NUMBER
PACKAGE
EQUIVALENT CIRCUIT
2SJ557A
3-pin Mini Mold (Thin Type) (SC-96)
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
−30
m20
V
V
Body
Diode
VGSS
ID(DC)
ID(pulse)
Gate
m2.5
A
Drain Current (pulse) Note1
m10
A
Gate
Protection
Diode
Total Power Dissipation
Total Power Dissipation Note2
Channel Temperature
Storage Temperature
PT1
PT2
Tch
Tstg
0.2
W
W
°C
°C
Source
1.25
Marking: XS
<R>
150
−55 to +150
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1 %
<R>
2. Mounted on FR-4 board of 2500 mm2 x 1.6 mm, copper foil 100%, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
VESD 180 V TYP. at C = 200 pF, R = 0 Ω, Single Pulse.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19059EJ2V0DS00 (2nd edition)
Date Published December 2007 NS
Printed in Japan
2007
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SJ557A
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain Cut-off Current
IDSS
VDS = −30 V, VGS = 0 V
–10
m10
−2.5
μA
μA
V
Gate Leakage Current
IGSS
VGS = m16 V, VDS = 0 V
VDS = −10 V, ID = −1.0 mA
VDS = −10 V, ID = −1.5 A
VGS = −10 V, ID = −1.0 A
VGS = −4.5 V, ID = −1.0 A
VGS = −4.0 V, ID = −1.0 A
VDS = −10 V,
Gate to Source Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
−1.0
−1.5
3.0
72
1.0
S
100
134
166
mΩ
mΩ
mΩ
pF
pF
pF
ns
91
113
315
78
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
VGS = 0 V,
Crss
f = 1.0 MHz
63
td(on)
tr
VDD = −10 V, ID = −1.0 A,
VGS = −10 V,
7
3.5
37
ns
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
ns
20
ns
Total Gate Charge
QG
VDD = −10 V,
3.2
1.1
1.5
0.9
37
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
QGS
VGS = −4.0 V,
QGD
ID = −2.5 A
VF(S-D)
IF = 2.5 A, VGS = 0 V
IF = 2.5 A, VGS = 0 V,
di/dt = 50 A/μs
trr
ns
Qrr
13
nC
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
V
GS(−)
D.U.T.
D.U.T.
90%
V
GS
Wave Form
VGS
10%
IG
= −2 mA
RL
0
RL
VDS(−)
RG
PG.
VDD
50 Ω
PG.
VDD
90%
90%
VDS
10% 10%
V
DS
Wave Form
0
VGS (−)
0
td(on)
t
r
td(off)
tf
τ
ton
toff
τ = 1
μs
Duty Cycle ≤ 1%
2
Data Sheet D19059EJ2V0DS
2SJ557A
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
<R>
120
100
80
60
40
20
0
-100
-10
I
D(pulse)
I
D(DC)
-1
T
C
= 25°C
Single Pulse
-0.1
Mounted on FR-4 board of
2500 mm2 x 1.6 mm,
copper foil 100%, t ≤ 5 sec
-0.01
0
20 40 60 80 100 120 140 160
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - °C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
<R>
1000
100
10
Without board
Mounted on FR-4 board of 2500 mm2 x 1.6 mm,
copper foil 100%, t ≤ 5 sec
1
Single Pulse
1 m
0.1
100 μ
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
-12
-10
-8
-10
-1
V
DS = −10 V
−4.5 V
Pulsed
V
GS = −10 V
−4.0 V
-0.1
-0.01
TA
= −25°C
25°C
-6
75°C
125°C
150°C
-4
-0.001
-0.0001
-2
Pulsed
0
0
-0.5 -1
-1.5
-2 -2.5 -3 -3.5
0
-0.5
-1
-1.5
-2
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
3
Data Sheet D19059EJ2V0DS
2SJ557A
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
-1.6
-1.4
-1.2
-1.0
-0.8
-0.6
10
1
T
A
= −25°C
25°C
75°C
125°C
150°C
0.1
V
DS = −10 V
= −1.0 mA
V
DS = −10 V
I
D
Pulsed
0.01
-50
0
50
100
150
-0.01
-0.1
-1
-10
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
200
200
Pulsed
Pulsed
ID
= −2.5 A
150
100
50
150
100
50
−4.0 V
−4.5 V
−1.0 A
V
GS = −10 V
0
0
0
-5
-10
-15
-20
-0.1
-1
-10
-100
ID - Drain Current - A
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
200
150
100
50
1000
100
10
I
D
= −1.0 A
Pulsed
−4.0 V
C
iss
−4.5 V
C
oss
rss
VGS = −10 V
C
V
GS = 0 V
f = 1.0 MHz
0
-50
0
50
100
150
-0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
4
Data Sheet D19059EJ2V0DS
2SJ557A
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100
10
1
-12
-10
-8
-6
-5
-4
-3
-2
-1
t
t
d(off)
V
DD = −10 V
−6 V
f
-6
t
t
d(on)
r
V
GS
-4
V
V
DD
GS
=
=
−
−
10 V
10 V
-2
V
DD
I
D
= −2.5 A
R = 10
Ω
G
0
0
1
2
3
4
-0.1
-1
ID - Drain Current - A
-10
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
100
1
0.1
0.01
0.001
VGS = 0 V
di/dt = 50 A/μs
V
GS = 0 V
Pulsed
10
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet D19059EJ2V0DS
2SJ557A
•
The information in this document is current as of December, 2007. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
相关型号：
2SJ559-A
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
NEC
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