2SJ559-A [NEC]

Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;


型号：	2SJ559-A
厂家：	NEC
描述：	Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
文件：	总8页 (文件大小：50K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ559

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit : mm)

The 2SJ559 is a switching device which can be driven directly

by a 2.5 V power source.

+0.1

–0.05

0.1

0.3 ± 0.05

The 2SJ559 has excellent switching characteristics, and is

suitable for use as a high-speed switching device in digital

circuits.

0 to 0.1

FEATURES

• Can be driven by a 2.5 V power source.

• Low gate cut-off voltage.

+0.1

–0

0.2

0.6

0.5

0.75 ± 0.05

1.0

1.6 ± 0.1

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

DSS

EQUIVALENT CIRCUIT

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

–30

GSS

Drain

D(DC)

0.1

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Channel Temperature

Storage Temperature

D(pulse)

0.4

200

°C

Internal Diode

150

Gate

stg

–55 to +150 °C

Gate Protect

Diode

Source

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %

2. Mounted on ceramic substrate of 3.0cm²× 0.64 mm

Marking : C1

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No.

Date Published June 1999 NS CP(K)

Printed in Japan

D13801EJ1V0DS00 (1st edition)

1999

2SJ559

ELECTRICAL CHARACTERISTICS (T^A= 25 °C)

CHARACTERISTICS

Drain Cut-off Current

SYMBOL

I^DSS

TEST CONDITIONS

MIN. TYP. MAX. UNIT

V^DS= –30 V, V^GS= 0 V

V^GS= 20 V, V^DS= 0 V

–1

µA

Gate Leakage Current

I^GSS

Gate Cut-off Voltage

V^GS(off)

| y^fs|

R^DS(on)1

R^DS(on)2

R^DS(on)3

C^iss

V^DS= –3 V, I^D= –10 µA

V^DS= –3 V, I^D= –10 mA

V^GS= –2.5 V, I^D= –1 mA

V^GS= –4 V, I^D= –10 mA

V^GS= –10 V, I^D= –10 mA

V^DS= –3 V

–1.0

–1.4

–1.7

Forward Transfer Admittance

Drain to Source On-state Resistance

Ω

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Rise Time

C^oss

V^GS= 0 V

C^rss

f = 1 MHz

1.3

140

330

220

320

t^d(on)

V^DD= –3 V

t^r

I^D= –10 mA

Turn-off Delay Time

Fall Time

t^d(off)

V^GS(on)= –4 V

t^f

R^G= 10 Ω, R^L= 300 Ω

TEST CIRCUIT SWITCHING TIME

D.U.T.

90 %

Wave Form

GS(on)

10 %

PG.

VDD

R = 10 Ω

90 %

10 %

Wave Form

d(on)

td(off)

toff

τ = 1µ s

Duty Cycle ≤ 1 %

Data Sheet D13801EJ1V0DS00

2SJ559

TYPICAL CHARACTERISTICS (TA = 25°C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

DRAIN CURRENT vs.

DRAIN TO SOURCE VOLTAGE

100

–100

–80

GS = –10 V

GS = –6 V

GS = –4 V

–60

GS = –3 V

–40

–20

GS = –2.5 V

–4

120

150

–1

–2

–3

–5

- Ambient Temperature - C

VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.

DRAIN CURRENT

TRANSFER CHARACTERISTICS

DS = –3 V

1000

100

–100

DS = –3 V

–10

–1

= 125 ˚C

A = 75 ˚C

= –25 ˚C

= 25 ˚C

A = 25 ˚C

= –25 ˚C

–0.1

TA = 75 ˚C

–0.01

= 125 ˚C

–0.001

–0.1

–1

–10

–100

–1000

–0.8

–1.6

–2.4

–3.2

–4.0

ID - Drain Current - mA

VGS - Gate to Source Voltage - V

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

VGS = –4 V

GS = –2.5 V

= 125 ˚C

A = 75 ˚C

= 125 ˚C

A = 75 ˚C

= 25 ˚C

= –25 ˚C

= 25 ˚C

= –25 ˚C

–0.1

–1

–10

–100

–1000

–0.1

–1

–10

–100

–1000

D - Drain Current - mA

Data Sheet D13801EJ1V0DS00

2SJ559

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

GATE TO SOURCE VOLTAGE

DRAIN TO SOURCE ON-STATE RESISTANCE vs.

DRAIN CURRENT

= –10 V

–1 mA

–10 mA

–100 mA

75 ˚C

25 ˚C

TA = –25 ˚C

TA = 125 ˚C

–0.1

–1

–10

–100

–1000

–2

–4

–6

–8

–10

D - Drain Current - mA

VGS - Gate to Source Voltage - V

CAPACITANCE vs.

DRAIN TO SOURCE VOLTAGE

SWITCHING CHARACTERISTICS

100

1000

GS = 0 V

f = 1 MHz

oss

iss

d(on)

100

d(off)

DD = –3 V

GS(on) = –4 V

in = 10 Ω

rss

–10

–100

D - Drain Current - mA

–1000

–1

–10

–100

DS - Drain to Source Voltage - V

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE

–1000

–100

–10

–1

–0.1

–0.2

–0.4

–0.6

–0.8

–1.0

–1.2

VSD - Source to Drain Voltage - V

Data Sheet D13801EJ1V0DS00

2SJ559

[MEMO]

Data Sheet D13801EJ1V0DS00

2SJ559

[MEMO]

Data Sheet D13801EJ1V0DS00

2SJ559

[MEMO]

Data Sheet D13801EJ1V0DS00

2SJ559

• The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

• No part of this document may be copied or reproduced in any form or by any means without the prior written

consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in

this document.

• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property

rights of third parties by or arising from use of a device described herein or any other liability arising from use

of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other

intellectual property rights of NEC Corporation or others.

• Descriptions of circuits, software, and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these circuits,

software, and information in the design of the customer's equipment shall be done under the full responsibility

of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third

parties arising from the use of these circuits, software, and information.

• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,

the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or

property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety

measures in its design, such as redundancy, fire-containment, and anti-failure features.

• NEC devices are classified into the following three quality grades:

"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a

customer designated "quality assurance program" for a specific application. The recommended applications of

a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device

before using it in a particular application.

Standard: Computers, office equipment, communications equipment, test and measurement equipment,

audio and visual equipment, home electronic appliances, machine tools, personal electronic

equipment and industrial robots

Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems or medical equipment for life support, etc.

The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.

If customers intend to use NEC devices for applications other than those specified for Standard quality grade,

they should contact an NEC sales representative in advance.

M7 98. 8

2SJ559-A [NEC]

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