2SD1974ESTL-E [RENESAS]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SD1974ESTL-E |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总6页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1974
Silicon NPN Epitaxial
REJ03G0797-0200
(Previous ADE-208-1161)
Rev.2.00
Aug.10.2005
Application
Low frequency power amplifier
Outline
RENESAS Package code: PLZZ0004CA-A
(Package name: UP
1
2, 4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
1
4
ID
3
Note: Marking is “ES”.
s a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Sy
VCBO
VCEO
VEBO
IC
Unit
V
V
V
A
Collector peak current
E to C diode forward current
Collector power dissipation
Junction temperature
ic (peak)
ID
A
A
PC*1
1.0
W
°C
°C
Tj
150
Storage temperature
Tstg
–55 to +150
Note: 1. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD1974
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
VCEO(sus)
Min
25
Typ
—
Max
—
Unit
V
Test conditions
IC = 10 µA, IE = 0
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Collector to emitter sustaining voltage
25
—
35
V
IC = 1 mA, RBE = ∞
25
—
35
V
IC = 0.8 A, RBE = ∞,
L = 20 mH
Emitter to base breakdown voltage
Collector cutoff current
V(BR)EBO
ICBO
6
—
—
—
—
—
—
—
—
—
0.2
V
IE = 10 µA, IC = 0
VCB = 20 V, IE = 0
VCE = 20 V, RBE = ∞
VEB = 5 V, IC = 0
VCE = 2 V, IC = 0.1 A*1
IC = 0.8 A, IB = 80 mA*1
ID = 0.6 A*1
µA
µA
µA
ICEO
—
0.5
Emitter cutoff current
IEBO
—
0.2
DC current transfer ratio
Collector to emitter saturation voltage
E to C diode forward voltage
Notes: 1. Pulse test
hFE
250
—
1200
0.4
VCE(sat)
VD
V
V
—
1.5
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD1974
Main Characteristics
Maximum Collector Dissipation Curve
Area of Safe Operation
10
1.2
0.8
0.4
3
iC(peak)
1.0
IC(max)
0.3
0.1
0.03
0.01
Ta = 25°C
1 Shot Pulse
0.01 0.3
1.0
3
10
30
100
0
50
100
150
Ambient Tere Ta (°C)
Collector to Emitter Voltage VCE (V)
A
Typical Output Characteristics
1.0
0.8
0.6
4
10
8
6
4
2
IB = 0
Ta = 25°C
0
0.1
0.3
1.0
3
10
6
8
10
Pulse Width PW (ms)
Voltage VCE (V)
oltage vs.
or Current
Typical Transfer Characteristics
1.0
0.8
0.6
0.4
0.2
10
IC = 10 IB
Ta = 25°C
Pulse
3
1.0
0.3
0.1
VCE = 2 V
Ta = 25°C
Pulse
0.03
0.01
0.001 0.003 0.01 0.03
0.1 0.3
1.0
0
0.4
0.8
1.2
1.6
2.0
Base to Emitter Voltage VBE (V)
Collector Current IC (A)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD1974
DC Current Transfer Ratio vs.
Collector Current
Typical Characteristics of
Emitter to Collector Diode
10,000
1.0
0.8
0.6
0.4
0.2
VCE = 2 V
Pulse
3,000
1,000
25
Ta = 75°C
–25
300
100
Ta = 25°C
Pulse
30
10
0.001 0.003 0.01 0.03
0.1 0.3
1.0
0
0.4
0.8
1.2
1.6
2.0
Collector Currnt IC (A)
Emitter to Collector Forward Voltage V (V)
D
Collector ce vs.
Col
1,000
300
100
30
10
3
1
0.3
1.0
3
10
30
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD1974
Package Dimensions
JEITA Package Code
SC-62
RENESAS Code
Package Name
UPAK / UPAKV
MASS[Typ.]
0.050g
Unit: mm
PLZZ0004CA-A
4.5 0.1
1.8 Max
1.5 0.1
0.44 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
.5
Ordering Information
Part Name
Quantity
pping Container
oss Taping
2SD1974ESTL-E
1000
Note: For some grades, production may be terminated. Ploffice to check the state of
production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
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Colophon .3.0
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