2SD1975A [PANASONIC]
Silicon NPN triple diffusion planar type(For high power amplification); 硅NPN三重扩散平面型（适用于高功率放大）
| 型号： | 2SD1975A |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN triple diffusion planar type(For high power amplification) |
| 文件： | 总3页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1975, 2SD1975A
Silicon NPN triple diffusion planar type
For high power amplification
Unit: mm
Complementary to 2SB1317 and 2SB1317A
φ 3.3±0.2
5.0±0.3
20.0±0.5
3.0
Features
■
●
Satisfactory foward current transfer ratio hFE collector current IC
characteristics
●
Wide area of safe operation (ASO)
●
1.5
High transition frequency fT
●
Optimum for the output stage of a HiFi audio amplifier
1.5
2.0±0.3
2.7±0.3
3.0±0.3
Absolute Maximum Ratings (T =25˚C)
■
C
1.0±0.2
Parameter
Symbol
Ratings
Unit
0.6±0.2
Collector to
2SD1975
2SD1975A
2SD1975
180
5.45±0.3
VCBO
V
10.9±0.5
base voltage
Collector to
200
180
VCEO
V
1:Base
2:Collector
3:Emitter
emitter voltage 2SD1975A
Emitter to base voltage
Peak collector current
Collector current
200
1
2
3
VEBO
ICP
5
V
A
A
TOP–3L Package
25
15
IC
Collector power TC=25°C
150
PC
W
dissipation
Ta=25°C
3.5
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
Conditions
min
typ
max
50
Unit
µA
Collector cutoff
2SD1975
VCB = 180V, IE = 0
current
2SD1975A
VCB = 200V, IE = 0
50
Emitter cutoff current
IEBO
hFE1
VEB = 3V, IC = 0
50
µA
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
20
60
20
*
Forward current transfer ratio
Base to emitter voltage
hFE2
hFE3
VBE
200
VCE = 5V, IC = 8A
VCE = 5V, IC = 8A
1.8
2.5
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 10A, IB = 1A
Transition frequency
fT
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
20
MHz
pF
Collector output capacitance
Cob
200
*hFE2 Rank classification
Rank
hFE2
Q
S
P
60 to 120
80 to 160
100 to 200
1
Power Transistors
2SD1975, 2SD1975A
PC — Ta
IC — VCE
IC — VBE
200
24
20
16
12
8
24
TC=25˚C
VCE=5V
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
IB=1000mA
20
16
12
8
800mA
700mA
600mA
500mA
400mA
300mA
(1)
150
100
50
25˚C
100˚C
TC=–25˚C
200mA
100mA
4
4
(3)
(2)
0
0
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
1
2
3
4
)
(
)
( )
V
(
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
10
1000
1000
IC/IB=10
VCE=5V
VCE=10V
f=1MHz
TC=25˚C
3
1
300
100
300
100
TC=100˚C
25˚C
TC=100˚C
25˚C
–25˚C
–25˚C
0.3
0.1
30
10
30
10
0.03
0.01
3
1
3
1
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
0.01 0.03
0.1
0.3
1
3
10
(
A
)
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Cob — VCB
Area of safe operation (ASO)
10000
100
IE=0
f=1MHz
TC=25˚C
Non repetitive pulse
TC=25˚C
ICP
30
10
3000
1000
IC
t=10ms
100ms
3
1
DC
300
100
0.3
0.1
30
10
0.03
0.01
1
3
10
30
100
1
3
10
30
100 300 1000
(
V
)
( )
Collector to emitter voltage VCE V
Collector to base voltage VCB
2
Power Transistors
2SD1975, 2SD1975A
Rth(t) — t
10000
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
1000
100
10
(1)
(2)
1
0.1
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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