2SD1975S [ISC]
Transistor;
| 型号： | 2SD1975S |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1975 2SD1975A
DESCRIPTION
·With TO-3PL package
·Complement to type 2SB1317/1317A
·Wide area of safe operation
·High transition frequency fT
APPLICATIONS
·For high power amplification
·Optimum for the output stage of a
Hi-Fi audio amplifier
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PL) and symbol
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
180
200
180
200
5
UNIT
2SD1975
2SD1975A
2SD1975
2SD1975A
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
15
ICM
Collector current-peak
25
Ta=25℃
TC=25℃
3.5
PC
Collector power dissipation
W
150
150
-55~150
Tj
Junction temperature
Storage temperature
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1975 2SD1975A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
2.5
UNIT
V
Collector-emitter saturation voltage IC=10A ;IB=1A
VBE
Emitter-base voltage
IC=8A ; VCE=5V
VCB=180V; IE=0
VCB=200V; IE=0
VEB=3V; IC=0
1.8
V
2SD1975
Collector
cut-off current
ICBO
50
50
μA
μA
2SD1975A
IEBO
hFE-1
hFE-2
hFE-3
fT
Emitter cut-off current
DC current gain
IC=20mA ; VCE=5V
IC=1A ; VCE=5V
IC=8A ; VCE=5V
IC=0.5A ; VCE=5V
f=1MHz;VCB=10V
20
60
20
DC current gain
200
DC current gain
Transition frequency
20
MHz
pF
COB
Collector output capacitance
200
hFE-2 classifications
Q
S
P
60-120
80-160
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1975 2SD1975A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1975 2SD1975A
4
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